R5005CNJ [ROHM]
10V Drive Nch MOSFET; 10V驱动N沟道MOSFET
| 型号： | R5005CNJ |
| 厂家： | 
ROHM |
| 描述： | 10V Drive Nch MOSFET |
| 文件： | 总6页 (文件大小：1196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
10V Drive Nch MOSFET
R5005CNJ
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
LPTS
10.1
4.5
1.3
Features
1.24
1) Low on-resistance.
2) High-speed switching.
3) Wide range of SOA.
4) Drive circuits can be simple.
5) Parallel use is easy.
0.4
2.7
2.54
0.78
5.08
(1) Gate
(2) Drain
(3) Source
(1) (2) (3)
Application
Switching
Packaging specifications
Inner circuit
∗1
Package
Taping
TL
Type
Code
Basic ordering unit (pieces)
1000
∗2
R5005CNJ
(1) Gate
(1)
(2)
(3)
(2) Drain
(3) Source
1 ESD PROTECTION DIODE
2 BODY DIODE
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
Drain-source voltage
Limits
Unit
V
VDSS
VGSS
ID
500
Gate-source voltage
30
V
Continuous
Pulsed
5
A
*3
*1
Drain current
IDP
20
A
Continuous
Pulsed
IS
5
A
*3
*1
*2
*2
*4
Source current
(Body Diode)
ISP
20
2.5
A
Avalanche current
Avalanche energy
Power dissipation
Channel temperature
IAS
A
EAS
PD
1.6
mJ
W
C
C
40
Tch
Tstg
150
Range of storage temperature
55 to 150
*1 Pw10s, Duty cycle1%
*2 L 500H, VDD=50V, RG=25, Tch=25C
*3 Limited only by maximum temperature allowed.
*4 TC=25C
Thermal resistance
Parameter
Symbol
Rth (ch-c)
Limits
3.125
Unit
Channel to Case
C / W
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2011.10 - Rev.A
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1/5
Data Sheet
R5005CNJ
ꢀ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
IGSS
Min.
-
Typ.
Max.
10
-
Unit
A VGS=25V, VDS=0V
ID=1mA, VGS=0V
A VDS=500V, VGS=0V
Conditions
Gate-source leakage
-
-
-
-
Drain-source breakdown voltage V(BR)DSS
500
-
V
Zero gate voltage drain current
IDSS
100
4.5
Gate threshold voltage
Static drain-source on-state
resistance
VGS (th)
2.5
V
S
VDS=10V, ID=1mA
ID=2.5A, VGS=10V
RDS (on)
*
-
1.3
1.6
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
Ciss
Coss
Crss
td(on)
tr
1.5
2.7
320
180
15
-
-
-
-
-
-
-
-
-
-
-
VDS=10V, ID=2.5A
-
-
-
-
-
-
-
-
-
-
pF VDS=25V
pF VGS=0V
pF f=1MHz
20
ns VDD 250V, ID=2.5A
ns VGS=10V
ns RL=100
ns RG=10
*
25
*
Turn-off delay time
Fall time
td(off)
40
*
*
*
*
*
tf
20
Total gate charge
Gate-source charge
Gate-drain charge
Qg
10.8
3.2
4.4
nC VDD 250V
nC ID=5.0A
Qgs
Qgd
nC VGS=10V
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max.
1.5
Unit
V
Conditions
*
VSD
IS=5.0A, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2/5
2011.10 - Rev.A
Data Sheet
R5005CNJ
ꢀ
Electrical characteristic curves
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.3 Typical Transfer Characteristics
1
10
1
5
4
3
2
1
0
Ta=25℃
VDS= 10V
Pulsed
VGS=10V
pulsed
VGS=10.0V
VGS=9.0V
0.8
VGS=6.5V
VGS=9.0V
VGS=8.0V
VGS=7.5V
Ta=125℃
VGS=8.0V
Ta= 75℃
Ta= 25℃
Ta= -25℃
VGS=7.5V
VGS=6.0V
0.6
VGS=7.0V
VGS=7.0V
VGS=6.5V
0.1
Ta=25℃
pulsed
VGS=5.5V
VGS=6.0V
0.4
0.2
0
VGS=5.0V
0.01
0.001
VGS=5.0V
VGS=4.5V
VGS=4.5V
0.8
0
1
2
3
4
5
6
7
0
2
4
6
8
10
0
0.2
0.4
0.6
1
GATE-SOURCE VOLTAGE : VGS (V)
Drain-Source Voltage : VDS [V]
Drain-Source Voltage : VDS [V]
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current
Fig.6 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.4 Gate Threshold Voltage
vs. Channel Temperature
6
5
4
3
2
1
0
5
4
3
2
1
0
100
10
VDS= 10V
ID= 1mA
Ta=25℃
pulsed
VGS= 10V
Pulsed
1
ID= 5.0A
ID= 2.5A
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
0.1
0.01
0
5
10
15
-50
0
50
100
150
0.001
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE: Tch (℃)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.9 Reverse Drain Current vs.
Sourse-Drain Voltage
5
4
3
2
1
0
10
1
10
1
VDS= 10V
Pulsed
VGS= 10V
Pulsed
VGS= 0V
Pulsed
ID= 5.0A
0.1
0.1
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
Ta=125℃
Ta= 75℃
Ta= 25℃
Ta= -25℃
ID= 2.5A
0.01
0.001
0.01
0.001
-50
0
50
100
150
0.001
0.01
0.1
1
10
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN CURRENT : ID (A)
CHANNEL TEMPERATURE: Tch (℃)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/5
2011.10 - Rev.A
Data Sheet
R5005CNJ
ꢀ
Fig.11 Reverse Recovery Time
vs.Source Current
Fig.10 Typical Capacitance vs.
Drain-Source Voltage
Fig.12 Switching Characteristics
10000
1000
100
10
1000
100
10
10000
1000
100
10
Ta= 25℃
tf
VDD= 250V
VGS= 10V
RG= 10Ω
Pulsed
Ciss
td(off)
Coss
Ta= 25℃
di / dt= 100A / μs
VGS= 0V
Ta= 25℃
f= 1MHz
VGS= 0V
tr
Crss
td(on)
Pulsed
1
1
0.01
0.1
1
10
100
1000
0.01
0.1
1
10
0.1
1
10
100
DRAIN CURRENT : ID (A)
DRAIN-SOURCE VOLTAGE : VDS (V)
SOURCE CURRENT : IS (A)
Fig.13 Dynamic Input Characteristics
15
Ta= 25℃
VDD= 250V
ID= 5A
RG= 10Ω
Pulsed
10
5
0
0
5
10
15
TOTAL GATE CHARGE : Qg (nC)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/5
2011.10 - Rev.A
Data Sheet
R5005CNJ
ꢀ
Measurement circuits
Pulse width
V
GS
ID
VDS
90%
50%
10%
50%
V
V
GS
DS
R
L
10%
10%
90%
D.U.T.
V
DD
RG
90%
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
V
G
VGS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
V
GS
IAS
VDS
V(BR)DSS
L
IAS
D.U.T.
RG
VDD
VDD
V
(BR)DSS
1
2
E
AS
=
L IAS2
V
(BR)DSS
-
V
DD
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
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© 2011 ROHM Co., Ltd. All rights reserved.
5/5
2011.10 - Rev.A
Notice
N o t e s
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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