R5011FNX [ROHM]
10V Drive Nch MOSFET; 10V驱动N沟道MOSFET型号: | R5011FNX |
厂家: | ROHM |
描述: | 10V Drive Nch MOSFET |
文件: | 总6页 (文件大小:284K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10V Drive Nch MOSFET
R5011FNX
zStructure
zDimensions (Unit : mm)
Silicon N-channel MOSFET
TO-220FM
10.0
φ3.2
4.5
2.8
zFeatures
1) Fast reverse recovery time.
2) Low on-resistance.
1.2
1.3
3) Fast switching speed.
4) Gate-source voltage (VGSS) guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
0.8
(1) Gate
2.54
2.54
0.75
2.6
(2) Drain
(3) Source
( ) ( ) ( )
1 2 3
zApplications
Switching
zInner circuit
zPackaging specifications
Bulk
500
Package
∗1
Type
Basic ordering unit (pieces)
R5011FNX
(1)
(2)
(3)
(1) Gate
(2) Drain
(3) Source
∗1 Body Diode
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Limits
Symbol
Unit
V
500
VDSS
GSS
30
V
V
∗3
∗1
∗3
∗1
Continuous
Pulsed
11
I
D
A
Drain current
44
I
DP
A
Continuous
Pulsed
11
I
S
A
Source current
(Body Diode)
44
5.5
I
SP
AS
AS
A
∗2
∗2
Avalanche current
Avalanche energy
A
I
8.1
E
mJ
W
°C
°C
Total power dissipation (Tc=25°C)
50
P
D
Channel temperature
150
Tch
Range of storage temperature
−55 to +150
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 500µH, VDD=50V, R =25Ω, Starting, Tch=25°C
G
∗3 Limited only by maximum temperature allowed
zThermal resistance
Parameter
Symbol
Limits
2.5
Unit
Channel to case
Rth(ch-c)
°C/W
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R5011FNX
Data Sheet
zElectrical characteristics (Ta=25°C)
Parameter
Typ.
Symbol Min.
Max.
100
−
Unit
nA
V
Conditions
VGS= 30V, VDS=0V
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state resistance
Forward transfer admittance
Input capacitance
I
GSS
(BR)DSS
DSS
−
500
−
−
−
V
I
D=1mA, VGS=0V
I
100
4.0
0.52
−
µA
V
V
DS=500V, VGS=0V
−
V
GS(th)
DS(on)
2.0
−
VDS=10V, I
D=1mA
−
∗
∗
0.40
R
Ω
I
D=5.5A, VGS=10V
| Yfs
|
4.5
−
S
VDS=10V, I
VDS=25V
VGS=0V
D=5.5A
−
950
580
30
26
28
75
30
30
7
C
iss
−
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Output capacitance
Coss
−
−
Reverse transfer capacitance
Turn-on delay time
Crss
−
−
f=1MHz
∗
∗
∗
∗
t
d(on)
−
−
V
DD 250V, I =5.5A
D
Rise time
t
r
−
−
VGS=10V
Turn-off delay time
t
d(off)
−
−
R
L
=45.5Ω
=10Ω
DD 250V
Fall time
t
f
−
−
RG
∗
∗
Total gate charge
Q
g
−
−
V
I
V
R
D
=11A
Gate-source charge
Qgs
gd
−
−
GS=10V
L
∗
=22.7Ω / R =10Ω
G
Gate-drain charge
Q
−
−
12
∗ Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max.
Conditions
Unit
V
∗
∗
V
SD
−
55
−
85
1.5
IS= 11A, VGS=0V
IF= 11A, di/dt=100A/µs
Forward recovery time
t
rr
115
ns
∗ Pulsed
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2009.03 - Rev.A
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R5011FNX
Data Sheet
zElectrical characteristic curves
100
20
15
10
5
10
8
PW= 100us
Ta= 25°C
Pulsed
10V
Ta= 25°C
Pulsed
10V
8.0V
8.0V
10
1
6.0V
7.0V
5.5V
5.0V
7.0V
6.5
6
6.5V
6.0V
5.5V
Operation in
this
area is limited
4
5.0V
0.1
0.01
2
PW= 1ms
VGS= 4.5V
Tc = 25°C
Single Pulse
VGS= 4.5V
DC operation
0
0
0.1
1
10
100
1000
0
10
20
30
40
50
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE : VDS ( V )
Fig.1 Maximum Safe Operating Aera
DRAIN-SOURCE VOLTAGE: VDS (V)
DRAIN-SOURCE VOLTAGE: VDS (V)
Fig.3: Typical output
Fig.2: Typical output characteristics(
)
Ⅰ
100
10
6
5
4
3
2
1
0
10
VDS= 10V
Pulsed
VDS= 10V
ID= 1mA
VGS= 10V
Pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1
0.1
1
0.1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.01
0.01
0.001
0.1
1
10
100
-50
0
50
100
150
0.0
1.5
3.0
4.5
6.0
GATE-SOURCE VOLTAGE : VGS (V)
Fig.4 Typical Transfer Characteristics
CHANNEL TEMPERATURE: Tch (°C)
Fig.5 Gate Threshold Voltage
vs. Channel Temperature
DRAIN CURRENT : ID (A)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
100
10
1.4
1.2
1
Ta=25°C
Pulsed
VGS= 10V
Pulsed
VDS= 10V
Pulsed
ID= 11.0A
0.8
0.6
0.4
0.2
0
ID= 11.0A
1
ID= 5.5A
Ta= -25°C
Ta= 25°C
Ta= 75°C
Ta= 125°C
ID= 5.5A
0.1
0.01
-50
0
50
100
150
0
5
10
15
0.01
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS (V)
Fig.7 Static Drain-Source On-State
Resistance vs. Gate Source
CHANNEL TEMPERATURE: Tch (°C)
Fig.8 Static Drain-Source On-State
Resistance vs. Channel Temperature
DRAIN CURRENT : ID (A)
Fig.9 Forward Transfer Admittance
vs. Drain Current
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R5011FNX
Data Sheet
15
10
5
10000
1000
100
10
100
VGS= 0V
Pulsed
Ciss
10
1
Coss
Crss
Ta= 25°C
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
VDD= 250V
ID= 11.0A
RG= 10Ω
Pulsed
Ta= 25°C
f= 1MHz
0.1
0.01
V
GS= 0V
1
0
0
0.5
1
1.5
0.01
0.1
1
10
100
1000
0
10
20
30
40
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : V (V)
Fig.11 Typical CapacitancDeSvs.
TOTAL GATE CHARGE : Qg (nC)
Fig.12 Dynamic Input Characteristics
Drain-Source Voltage
Fig.10 Reverse Drain Current vs.
Sourse-Drain Voltage
1000
100
10
10000
1000
100
10
Ta= 25°C
Ta= 25°C
di/dt= 100A/µs
VGS= 0V
V
V
DD= 250V
GS= 10V
tf
RG= 10Ω
Pulsed
Pulsed
td(off)
tr
td(on)
1
0.1
1
10
100
0.1
1
10
100
REVERSE DRAIN CURRENT : IDR (A)
Fig.13 Reverse Recovery Time
DRAIN CURRENT : I (A)
Fig.14 Switching CharactDeristics
ꢀ
vs.Reverse Drain Current
10
1
Ta = 25°C
Single Pulse : 1Unit
Rth ch-a
(
t
=
t ×Rth ch-a
)( ) r( ) )
(
Rth ch-a = 50.4°C/W
(
)
0.1
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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R5011FNX
Data Sheet
zSwitching characteristics measurement circuit
Fig.1-1 Switching time measurement circuit
Fig.1-2 Switching waveforms
IG(Const.)
Fig.2-1 Gate charge measurement circuit
Fig.2-2 Gate charge waveform
Fig.3-1 Avalanche measurement circuit
Fig.3-2 Avalanche waveform
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illustrate the standard usage and operations of the Products. The peripheral conditions must
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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A
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