RAL045P01TCR [ROHM]
Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN;
| 型号： | RAL045P01TCR |
| 厂家： | 
ROHM |
| 描述： | Small Signal Field-Effect Transistor, 4.5A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TUMT6, 6 PIN 开关 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：531K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
1.5V Drive Pch MOSFET
RAL045P01
Structure
Dimensions (Unit : mm)
Silicon P-channel MOSFET
TUMT6
SOT-363T
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive.(1.5V)
Abbreviated symbol : SC
Application
Switching
Packaging specifications
Inner circuit
(6)
(5)
(4)
Package
Taping
TCR
3000
Type
Code
∗2
Basic ordering unit (pieces)
RAL045P01
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Absolute maximum ratings (Ta = 25C)
Parameter
(1)
(2)
(3)
Symbol
VDSS
VGSS
ID
Limits
12
Unit
V
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Drain-source voltage
Gate-source voltage
0 to 8
4.5
V
Continuous
A
Drain current
Pulsed
*1
IDP
18
A
Continuous
Pulsed
IS
0.8
A
Source current
(Body Diode)
*1
*2
ISP
18
A
Power dissipation
PD
1
W
C
C
Channel temperature
Tch
Tstg
150
Range of storage temperature
*1 Pw10s, Duty cycle1%
55 to 150
*2 Mounted on a ceramic board.
Thermal resistance
Parameter
Symbol
Rth (ch-a)*
Limits
125
Unit
Channel to Ambient
*Mounted on a ceramic board.
C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.03 - Rev.A
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Data Sheet
RAL045P01
ꢀ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A VGS=8V, VDS=0V
ID=1mA, VGS=0V
A VDS=12V, VGS=0V
Conditions
Gate-source leakage
-
10
Drain-source breakdown voltage V(BR)DSS
12
-
-
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
-
10
VGS (th)
0.3
-
1.0
V
VDS=6V, ID=1mA
ID=4.5A, VGS=4.5V
ID=2.2A, VGS=2.5V
ID=2.2A, VGS=1.8V
ID=0.9A, VGS=1.5V
ID=4.5A, VDS=6V
-
22
28
38
50
-
30
-
39
Static drain-source on-state
resistance
*
RDS (on)
m
S
-
57
-
100
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
5.5
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
4200
350
330
16
60
400
150
40
6.5
6.0
pF VDS=6V
pF VGS=0V
pF f=1MHz
td(on)
ns ID=2.2A, VDD 6V
ns VGS=4.5V
ns RL=2.7
*
*
*
*
*
*
*
tr
td(off)
tf
Turn-off delay time
Fall time
ns RG=10
Total gate charge
Gate-source charge
Gate-drain charge
Qg
Qgs
Qgd
nC ID=4.5A
nC VDD 6V
nC VGS=4.5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max. Unit
1.2
Conditions
*
VSD
V
Is=4.5A, VGS=0V
*Pulsed
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2/6
2011.03 - Rev.A
Data Sheet
RAL045P01
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.1 Typical output characteristics(Ⅰ)
Fig.2 Typical output characteristics(Ⅱ)
4.5
4.5
4
Ta=25°C
Pulsed
Ta=25°C
Pulsed
4
3.5
3
VGS= -4.5V
VGS= -4.0V
VGS= -2.5V
VGS= -4.5V
VGS= -4.0V
VGS= -2.5V
VGS= -2.0V
3.5
3
VGS= -1.2V
2.5
2
2.5
2
VGS= -1.8V
VGS= -1.5V
VGS= -1.2V
VGS= -2.0V
VGS= -1.8V
VGS= -1.5V
1.5
1
1.5
1
VGS= -1.0V
0.5
0
0.5
0
VGS= -1.0V
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
10
10
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.3 Typical Transfer Characteristics
10
1
100
VDS= -6V
Pulsed
Ta=25°C
Pulsed
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
10
0
0.5
1
1.5
2
0.1
1
GATE-SOURCE VOLTAGE : -VGS[V]
DRAIN-CURRENT : -ID[A]
Fig.5 Static Drain-Source On-State
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Resistance vs. Drain Current(Ⅲ)
100
100
VGS= -4.5V
Pulsed
VGS= -2.5V
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
10
0.1
1
10
0.1
1
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
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3/6
2011.03 - Rev.A
Data Sheet
RAL045P01
ꢀ
Fig.7 Static Drain-Source On-State
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Resistance vs. Drain Current(Ⅴ)
100
100
VGS= -1.5V
Pulsed
VGS= -1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
10
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.9 Forward Transfer Admittance vs. Drain Current
100
10
1
10
VDS= -6V
Pulsed
VGS=0V
Pulsed
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.001
0.1
0
0.5
1
1.5
0.1
1
10
SOURCE-DRAIN VOLTAGE : -VSD [V]
DRAIN-CURRENT : -ID[A]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.12 Switching Characteristics
1000
100
10
100
80
60
40
20
0
Ta=25°C
VDD= -6V
VGS=-4.5V
RG=10W
Ta=25°C
Pulsed
ID= -4.5A
ID= -0.9A
Pulsed
td(off)
tf
tr
td(on)
0
2
4
6
8
0.01
0.1
1
10
100
DRAIN-CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.03 - Rev.A
Data Sheet
RAL045P01
ꢀ
Fig.13 Dynamic Input Characteristics
Fig.14 Typical Capacitance vs. Drain-Source Voltage
5
4
3
2
1
0
10000
1000
100
Ciss
Coss
Ta=25°C
VDD= -6V
ID= -4.5A
RG=10W
Pulsed
Ta=25°C
f=1MHz
VGS=0V
Crss
0
5
10 15 20 25 30 35 40 45 50
TOTAL GATE CHARGE : Qg [nC]
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
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5/6
2011.03 - Rev.A
Data Sheet
RAL045P01
ꢀ
Measurement circuits
Pulse Width
V
GS
ID
V
V
GS
10%
50%
V
DS
50%
90%
R
L
D.U.T.
10%
90%
10%
90%
RG
V
DD
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2ꢀSwitching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
I
D
VDS
Q
g
V
GS
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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6/6
2011.03 - Rev.A
Notice
N o t e s
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