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RB055L-40_11 [ROHM]

Schottky Barrier Diode; 肖特基二极管
RB055L-40_11
型号： RB055L-40_11
厂家： ROHM    ROHM
描述：

Schottky Barrier Diode
肖特基二极管

肖特基二极管
文件： 总4页 (文件大小：967K)
中文：  中文翻译
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Data Sheet  
Schottky Barrier Diode  
RB055L-40  
Applications  
Dimensions(Unit : mm)  
Land size figure (Unit : mm)  
General rectification  
2.0  
2.6±0.2  
Features  
1)Small power mold type.（PMDS）  
2)Low IR  
5
2
0.1±0.02  
ꢀꢀꢀ 0.1  
①
②
3)High reliability  
2.0±0.2  
1.5±0.2  
PMDS  
Construction  
Silicon epitaxial planar  
Structure  
ROHM : PMDS  
JEDEC : SOD-106  
①
②
Manufacture Date  
Taping specifications(Unit : mm)  
2.0±0.05  
4.0±0.1  
0.3  
φ1.55±0.05  
φ1.55  
2.9±0.1  
4.0±0.1  
2.8MAX  
Absolute maximum ratings(Ta=25°C)  
Parameter  
Limits  
40  
Symbol  
VRM  
Unit  
V
Reverse voltage (repetitive peak)  
Reverse voltage (DC)  
VR  
40  
V
Average rectified forwarfd current  
Forward current surge peak （60Hz・1cyc）  
Junction temperature  
3
Io  
IFSM  
A
40  
A
150  
Tj  
°C  
°C  
Storage temperature  
40 to 150  
Tstg  
(*1) Mounted on epoxyboard. 180°Half sine wave  
Electrical characteristics(Ta=25°C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
0.65  
0.5  
Unit  
V
Conditions  
VF  
IR  
-
-
-
-
IF=3.0A  
VR=40V  
Reverse current  
mA  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  
2011.04 - Rev.A  
Data Sheet  
RB055L-40  
Ta=150℃  
Ta=125℃  
10000  
1000  
100  
10  
10000  
1000  
100  
10  
f=1MHz  
Ta=150℃  
Ta=125℃  
1000  
100  
10  
Ta=75℃  
Ta=75℃  
Ta=-25℃  
Ta=25℃  
Ta=25℃  
1
Ta=-25℃  
0.1  
1
0.01  
0.001  
0.1  
1
0
100 200 300 400 500 600 700  
0
10  
20  
30  
0
10  
20  
30  
40  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
FORWARD VOLTAGE：VF(mV)  
VF-IF CHARACTERISTICS  
REVERSE VOLTAGE：VR(V)  
VR-IR CHARACTERISTICS  
400  
390  
380  
370  
360  
350  
340  
330  
320  
310  
300  
580  
570  
560  
550  
540  
530  
100  
Ta=25℃  
VR=40V  
n=30pcs  
Ta=25℃  
f=1MHz  
VR=0V  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Ta=25℃  
IF=3A  
n=30pcs  
n=10pcs  
AVE:559.6mV  
AVE:6.62uA  
AVE:329.5pF  
VF DISPERSION MAP  
IR DISPERSION MAP  
Ct DISPERSION MAP  
30  
1000  
100  
10  
300  
250  
200  
150  
100  
50  
Ta=25℃  
IF=0.5A  
IR=1A  
Irr=0.25*IR  
n=10pcs  
Ifsm  
25  
20  
15  
10  
5
1cyc  
8.3ms  
Ifsm  
8.3ms 8.3ms  
1cyc  
AVE:8.20ns  
AVE:117.2A  
0
0
1
10  
NUMBER OF CYCLES  
IFSM-CYCLE CHARACTERISTICS  
100  
trr DISPERSION MAP  
IFSM DISPERSION MAP  
Io-PfꢀCHARACTERISTICS  
5
250  
1000  
100  
10  
4.5  
4
Mounted on epoxy board  
Rth(j-a)  
Ifsm  
200  
150  
100  
50  
t
3.5  
3
DC  
D=1/2  
Rth(j-c)  
IF=1A  
2.5  
2
Sin(θ＝180)  
IM=100mA  
1.5  
1
1
1ms time  
300us  
0.5  
0
0
0.1  
1
10  
100  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
AVERAGE RECTIFIED  
4
4.5  
5
0.001 0.01  
0.1  
1
TIME:t(s)  
Rth-t CHARACTERISTICS  
10  
100  
1000  
TIME:t(ms)  
IFSM-t CHARACTERISTICS  
FORWARD CURRENT：Io(A)  
Io-Pf CHARACTERISTICS  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/3  
2011.04 - Rev.A  
Data Sheet  
RB055L-40  
5
4.5  
4
5
4.5  
4
0.5  
0.4  
0.3  
0.2  
Io  
0A  
0V  
DC  
VR  
D=1/2  
t
D=t/T  
VR=20V  
Tj=150℃  
3.5  
3
3.5  
3
Sin(θ＝180)  
DC  
T
2.5  
2
2.5  
2
D=1/2  
DC  
D=1/2  
Io  
0A  
0V  
1.5  
1
1.5  
1
VR  
＝180)  
Sin(θ  
Sin(θ＝180)  
t
D=t/T  
VR=20V  
Tj=150℃  
0.1  
0
0.5  
0
0.5  
0
T
0
25  
50  
75  
100  
125  
150  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
REVERSE VOLTAGE:VR(V)  
VR-PR CHARACTERISTICS  
AMBIENT TEMPERATURE:Ta(℃)  
Derating Curveﾞ(Io-Ta)  
CASE TEMPARATURE:Tc(℃)  
Derating Curveﾞ(Io-Tc)  
30  
25  
20  
15  
10  
5
No break at 30kV  
AVE:12.8kV  
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
0
ESD DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/3  
2011.04 - Rev.A  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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