RB055LA-40 [ROHM]
Schottky barrier diode; 肖特基二极管型号: | RB055LA-40 |
厂家: | ROHM |
描述: | Schottky barrier diode |
文件: | 总4页 (文件大小:184K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RB055LA-40
Diodes
Schottky barrier diode
RB055LA-40
zApplications
zExternal dimensions (Unit : mm)
zLand size figure (Unit : mm)
General rectification
2.0
0.2±0.15
ꢀꢀꢀ 0.1
2.6±0.2
zFeatures
1) Small power mold type
(PMDT)
2) Low V
F
3) High reliability
PMDT
zStructure
zStructure
Silicon epitaxial planar
1.5±0.2
0.95±0.1
ROHM : PMDT
Manufacture Date
①
zTaping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
φ1.55±0.1
ꢀꢀꢀꢀꢀ
0.25±0.05
0
φ1.55±0.1
ꢀꢀꢀꢀꢀ
0
4.0±0.1
2.7±0.1
1.25±0.1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Limits
40
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
40
V
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
3
70
Io
IFSM
Tj
A
A
150
-55 to +150
℃
℃
Storage temperature
Tstg
(*1)Tc=80℃max Mounted on epoxy board. 160°Half sine wave
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Conditions
Symbol
VF1
Min.
Typ.
Max.
0.55
0.62
100
Unit
V
-
-
-
-
-
-
IF=1.5A
IF=3.0A
VR=40V
VF2
V
IR
µA
1/3
RB055LA-40
Diodes
zElectrical characteristic curves
Ta=125℃
Ta=150℃
10000
10000
1000
100
10
1000
100
10
Ta=150℃
f=1MHz
Ta=75℃
Ta=25℃
1000
100
10
Ta=125℃
Ta=75℃
Ta=-25℃
Ta=25℃
1
Ta=-25℃
0.1
1
0.01
0.001
1
0.1
0
10
20
30
0
100 200 300 400 500 600 700
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
0
10
20
30
40
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
400
390
380
370
360
350
340
330
320
310
300
580
570
560
550
540
530
Ta=25℃
VR=40V
n=30pcs
Ta=25℃
f=1MHz
VR=0V
Ta=25℃
IF=3A
n=30pcs
n=10pcs
AVE:559.1mV
AVE:6.01uA
AVE:333.1pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
1000
100
10
300
250
200
150
100
50
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=20pcs
25
20
15
10
5
Ifsm
1cyc
8.3ms
Ifsm
8.3ms 8.3ms
1cyc
AVE:117.2A
AVE:4.43ns
0
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISRESION MAP
1000
100
10
1000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Mounted on epoxy board
DC
D=1/2
Rth(j-a)
Ifsm
t
100
10
1
Rth(j-c)
IF=3A
Sin(θ=180)
IM=100mA
1ms
tim
300us
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0.001 0.01
0.1
TIME:t(s)
Rth-t CHARACTERISTICS
1
10
100
1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
Io-Pf CHARACTERISTICS
2/3
RB055LA-40
Diodes
5
4.5
4
1.4
1.2
1
5
4.5
4
Io
0A
0V
D=1/2
VR
t
3.5
3
D=t/T
VR=20V
Tj=150℃
3.5
3
DC
DC
T
DC
0.8
0.6
0.4
0.2
0
Sin(θ=180)
D=1/2
2.5
2
2.5
2
D=1/2
Sin(θ=180)
Io
0A
0V
1.5
1
1.5
1
VR
t
D=t/T
VR=20V
Tj=150℃
0.5
0
0.5
0
Sin(θ=180)
30 40
T
0
10
20
0
25
50
75
100
125
150
0
25
50
75
100 125 150
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
30
25
20
15
10
5
No break at 30kV
AVE:11.5kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号:
RB056L-40TF
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, PMDS, 2 PIN
ROHM
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