RB085T-90_10 [ROHM]
Schottky barrier diode; 肖特基二极管
| 型号： | RB085T-90_10 |
| 厂家： | 
ROHM |
| 描述： | Schottky barrier diode |
| 文件： | 总4页 (文件大小：324K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Schottky barrier diode
RB085T-90
Applications
Dimensions (Unit : mm)
Structure
Switching power supply
Features
1) Cathode common type.
(TO-220)
(1) (2) (3)
2) Low IR
3) High reliability
9
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
90
90
Reverse voltage (repetitive peak)
Reverse voltage (DC)
V
10
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
Io
A
100
IFSM
Tj
A
150
C
C
Storage temperature
-40 to +150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=122C
Electrical characteristic (Ta=25°C)
Parameter
Conditions
Symbol
VF
Min.
Typ.
Max.
0.83
150
2.5
Unit
V
Forward voltage
Reverse current
-
-
-
-
-
-
IF=5A
IR
VR=90
A
Thermal impedance
junction to case
jc
C/W
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©2010 ROHM Co., Ltd. All rights reserved.
2010.02 - Rev.D
1/3
RB085T-90
ꢀ
Data Sheet
Electrical characteristic curves
Ta=150C
Ta=125C
10
100000
10000
1000
100
1000
100
10
Ta=150C
f=1MHz
Ta=125C
1
Ta=75C
Ta=75C
Ta=25C
Ta=-25C
Ta=25C
Ta=-25C
0.1
0.01
10
1
0.1
0.01
0.001
1
0
10 20 30 40 50 60 70 80 90
0
100 200 300 400 500 600 700 800 900
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
550
540
530
520
510
500
490
480
470
460
450
790
780
770
760
750
740
200
180
160
140
120
100
80
Ta=25C
f=1MHz
VR=0V
Ta=25C
IF=5A
Ta=25C
VR=90V
n=30pcs
n=30pcs
n=10pcs
60
AVE:14.3uA
40
AVE:498.5pF
AVE:766.6mV
20
0
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
30
25
20
15
10
5
300
250
200
150
100
50
Ta=25C
IF=0.5A
Ifsm
1cyc
Ifsm
IR=1A
Irr=0.25*IR
n=10pcs
8.3ms 8.3ms
1cyc
8.3ms
AVE:136.0A
AVE:7.40ns
0
0
1
10
NUMBER OF CYCLES
100
IFSM DISPERSION MAP
trr DISPERSION MAP
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
15
10
5
1000
100
10
100
10
1
IF=5A
IM=100mA
D=1/2
time
300us
Ifsm
t
DC
1ms
Rth(j-a)
Rth(j-c)
Sin(θ=180)
0
0.1
0
5
10
15
20
1
10
100
0.001
0.01
0.1
1
10
100
1000
TIME:t(s)
Rth-t CHARACTERISTICS
TIME:t(ms)
FSM-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
I
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©2010 ROHM Co., Ltd. All rights reserved.
2/3
2010.02 - Rev.D
ꢀ
RB085T-90
Data Sheet
10
8
30
20
10
0
30
20
10
0
Io
0A
0V
Io
0A
0V
VR
VR
t
t
D=t/T
D=t/T
VR=45V
Tj=150C
VR=45V
Tj=150C
DC
6
DC
T
T
Sin(θ=180)
D=1/2
D=1/2
DC
D=1/2
4
Sin(θ=180)
Sin(θ=180)
2
0
0
10 20 30 40 50 60 70 80 90
0
25
50
75
100
125
150
0
25
50
75
100
125
150
CASE TEMPARATURE:Tc(C)
AMBIENT TEMPERATURE : Ta(C)
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
Derating Curve"(Io-Tc)
Derating Curve"(Io-Ta)
30
25
20
15
10
5
No break at 30kV
AVE:5.30kV
0
C=200pF
C=100pF
R=0
R=1.5k
ESD DISPERSION MAP
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©2010 ROHM Co., Ltd. All rights reserved.
3/3
2010.02 - Rev.D
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A
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