RB095T-40_11 [ROHM]
Schottky barrier diode; 肖特基二极管
| 型号： | RB095T-40_11 |
| 厂家： | 
ROHM |
| 描述： | Schottky barrier diode |
| 文件： | 总4页 (文件大小：987K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Schottky barrier diode
RB095T-40
Applications
Dimensions (Unit : mm)
Structure
Switching power supply
Features
1) Cathode common type.
(TO-220)
(1) (2) (3)
2) Low IR
3) High reliability
Construction
Silicon epitaxial planer
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
V
45
Reverse voltage (repetitive peak)
Reverse voltage (DC)
40
V
6
100
Average rectified forward current (*1)
Forward current surge peak (60Hz / 1cyc) (*1)
Junction temperature
Io
A
IFSM
Tj
A
150
C
C
Storage temperature
40 to 150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=136C
Electrical characteristic (Ta=25°C)
Parameter
Conditions
Symbol
VF
Min.
Typ.
Max.
0.55
0.1
3
Unit
V
Forward voltage
Reverse current
-
-
-
-
-
-
IF=3A
IR
mA
C/W
VR=40V
Thermal impedance
junction to case
jc
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Data Sheet
RB095T-40
ꢀ
Electrical characteristic curves
1000
100
10
10
1000000
100000
10000
1000
100
Ta=150℃
Ta=125℃
f=1MHz
Ta=150℃
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=75℃
1
0.1
Ta=25℃
Ta=25℃
Ta=-25℃
10
1
0.1
0.01
0.01
1
0
100 200 300 400 500 600 700
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
500
490
480
470
460
450
200
180
160
140
120
100
80
650
640
630
620
610
600
590
580
570
560
550
Ta=25℃
IF=3A
Ta=25℃
VR=40V
n=30pcs
Ta=25℃
f=1MHz
VR=0V
n=30pcs
n=10pcs
60
AVE:472.9mV
40
AVE:14.2uA
20
AVE:617.9pF
0
V
F DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
300
250
200
150
100
50
30
25
20
15
10
5
Ta=25℃
IF=0.5A
IR=1A
Ifsm
1cyc
Irr=0.25*IR
n=10pcs
8.3ms 8.3ms
1cyc
8.3ms
AVE:11.40ns
AVE:178.0A
0
0
1
10
NUMBER OF CYCLES
FSM-CYCLE CHARACTERISTICS
100
trr DISPERSION MAP
IFSM DISPERSION MAP
I
1000
100
10
100
10
1
10
IM=100mA
1ms
IF=3A
Ifsm
t
time
300us
Rth(j-a)
Rth(j-c)
D=1/2
DC
Si(=180)
5
0
0.1
0
2
4
6
8
10
0.001 0.01
0.1
1
10
100
1000
1
10
100
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
TIME:t(ms)
FSM-t CHARACTERISTICS
Rth-t CHARACTERISTICS
I
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2011.04 - Rev.E
Data Sheet
RB095T-40
ꢀ
10
8
15
10
5
15
10
5
Io
0A
0V
Io
0A
0V
VR
VR
t
t
D=t/T
D=t/T
DC
DC
VR=20V
Tj=150℃
VR=20V
Tj=150℃
T
T
D=1/2
6
D=1/2
D=1/2
DC
4
Sin(=180)
Sin(θ=180)
Sin(θ=180)
2
0
0
0
0
10
20
30
40
0
25
50
75
100
125
150
0
25
50
75
100
125
150
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(C)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Ta)
Derating Curve"(Io-Tc)
30
25
20
15
10
5
No break at 30kV
AVE:15.6kV
0
C=200pF
C=100pF
R=0
R=1.5k
ESD DISPERSION MAP
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2011.04 - Rev.E
Notice
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