RB886G [ROHM]
Schottky barrier diode; 肖特基二极管
| 型号： | RB886G |
| 厂家： | 
ROHM |
| 描述： | Schottky barrier diode |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB886G
Diodes
Schottky barrier diode
RB886G
!Applications
High frequency detection
!External dimensions (Units : mm)
0.6 0.05
0.27 0.03
!Features
1) Small mold type. (VMD2)
2) Low Ct and high detection efficiency.
0.13 0.03
CATHODE MARK
0.5 0.05
!Construction
Silicon epitaxial planar
ROHM : VMD2
EIAJ : −
JEDEC : −
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
5.0
Unit
V
Reverse voltage
V
R
Forward current
I
F
10
mA
°C
Junction temperature
Storage temperature
Tj
125
Tstg
−40~+125
°C
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
−
Max.
0.35
120
Unit
V
Conditions
Forward voltage
VF
−
−
−
I
F
=1.0mA
=5.0V
=1.0V, f=1.0MHz
Reverse current
I
R
−
µA
pF
V
R
Capacitance between terminal
CT
0.53
0.80
V
R
∗ Please pay attention to static electricity when handling.
1/2
RB886G
Diodes
!Electrical characteristic curves (Ta=25°C)
25°C
75°C
0.9
0.8
1000
100
10
10
−25°C
125°C
f=1MHz
125°C
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
75°C
25°C
f=1.8GHz
0.1
0.01
−25°C
1
0
0
1
2
3
4
5
0
1
2
3
4
5
6
0
0.4
0.8
1.2
1.6
REVERSE VOLTAGE : V
R
(V)
REVERSE VOLTAGE : V
R
(V)
FORWARD VOLTAGE : VF (V)
Fig.2 Reverse characteristics
Fig.3 Capacitance between
terminals characteristics
Fig.1 Forward characteristics
!Spice parameter
Parameter
Value
Unit
A
1
2
IS
N
:
:
:
:
Saturation current
Emission coefficient
Ohmic resistance
Transit time
8.79631E-06
2.24097
−
3
RS
TT
6.20008
Ω
SEC
F
4
−
5
CJO : Junction capacitance
4.21E-13
6
M
:
:
:
:
:
:
:
:
:
:
Geading coefficient
0.346685
−
7
VJ
Junction potential
0.7
V
8
FC
EG
XTI
KF
AF
BV
IBV
RL
Depretion cap. Coefficient
Activation energy
0.5
−
9
1.11
eV
−
10
11
12
13
14
15
Isat temperature exponent
Flicker noise coefficient
Flicker noise exponent
Reverse breakdown voltage
I at V-breakdown
3
−
−
−
−
20
V
−
A
Junction leakage resistance
2.39557E+05
Ω
2/2
相关型号：
©2020 ICPDF网 联系我们和版权申明