RF081L2STF [ROHM]
Rectifier Diode, 1 Phase, 1 Element, 1.1A, 200V V(RRM), Silicon, PMDS, 2 PIN;
| 型号： | RF081L2STF |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 1.1A, 200V V(RRM), Silicon, PMDS, 2 PIN 超快速恢复二极管 光电二极管 |
| 文件： | 总5页 (文件大小：938K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
AEC-Q101 Qualified
Super Fast Recovery Diode
RF081L2STF
Series
Dimensions (Unit : mm)
Land size figure (Unit : mm)
Standard Fast Recovery
2.0
2.6±0.2
Applications
General rectification
6
5
0.1±0.02
ꢀꢀꢀ 0.1
①
②
PMDS
2.0±0.2
Features
1.5±0.2
1)Small power mold type.（PMDS）
2)Low switching loss
Structure
ROHM : PMDS
JEDEC : SOD-106
3)Low forward voltage
①
②
Manufacture date
Construction
Silicon epitaxial planer
Taping dimensions (Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings (TI=25C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Conditions
Symbol
VRM
Limits
Unit
V
D≥0.5
200
200
VR
Direct voltage
V
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
Average rectified forward current
Forward current surge peak
Io
Tl=120°C
1.1
25
A
A
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
IFSM
Junction temperature
Storage temperature
Tj
150
C
C
Tstg
55 to 150
Electrical characteristics (Tj=25C)
Parameter
Forward voltage
Conditions
IF=1.1A
Symbol
Min.
－
Typ.
0.85
0.01
12
Max.
0.98
10
Unit
V
VF
IR
VR=200V
Reverse current
－
μA
IF=0.5A,IR=1A,Irr=0.25×IR
junction to lead
Reverse recovery time
Thermal resistance
trr
－
25
ns
Rth(j-l)
－
－
23
°C/W
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.10 - Rev.A
1/4
Data Sheet
RF081L2STF
ꢀ
10
10000
1000
100
10
Tj=150°C
Tj=150°C
Tj=125°C
1
Tj=125°C
Tj=75°C
Tj=25°C
Tj=25°C
0.1
0.01
Tj=75°C
1
0
20 40 60 80 100 120 140 160 180 200
0
300
600
900
1200
1500
FORWARD VOLTAGE ：VF(mV)
REVERSE VOLTAGE：VR(V)
VF-IF CHARACTERISTICS
VR-IR CHARACTERISTICS
100
1000
950
900
850
800
750
700
IF=1.1A
f=1MHz
10
AVE:829mV
1
0
5
10
15
20
25
30
VF DISPERSION MAP
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
100
60
55
50
45
40
35
30
f=1MHz
VR=0V
Ta=25°C
VR=200V
n=20pcs
AVE:51.0pF
10
AVE:11.7nA
1
IR DISPERSION MAP
Ct DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.10 - Rev.A
Data Sheet
RF081L2STF
ꢀ
100
80
30
25
20
15
10
5
IF=0.5A
IR=1A
Irr=0.25×IR
AVE:74.5A
60
40
1cyc
IFSM
AVE:13.1ns
20
0
8.3ms
0
IFSM DISPERSION MAP
trr DISPERSION MAP
100
1000
100
10
10
IFSM
IFSM
8.3ms
1cyc
8.3ms
t
1
1
1
1
10
100
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
10
30
25
20
15
10
No break at 30kV
Rth(j-a)
On glass-epoxy substrate
soldering land 2mm□
Rth(j-l)
Rth(j-a)
On glass-epoxy substrate
soldering land 10mm□
AVE:12.0kV
1
5
0
0.1
0.001
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
0.01
0.1
1
10
100
1000
TIME:t(s)
ESD DISPERSION MAP
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.10 - Rev.A
Data Sheet
RF081L2STF
ꢀ
1.4
1.2
1
1.8
1.6
1.4
1.2
1
Io
D.C.
0A
0V
D.C.
VR
D=0.8
t
D=t/T
VR=160V
Tj=150°C
T
D=0.5
half sin wave
D=0.8
D=0.5
On glass-epoxy
substrate soldering land 2mm□
0.8
0.6
0.4
0.2
0
half sin wave
D=0.2
D=0.2
D=0.1
0.8
0.6
0.4
0.2
0
D=0.05
D=0.1
D=0.05
0
0.5
1
1.5
2
0
30
60
90
120
150
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
Io
0A
0V
2
1.8
1.6
1.4
1.2
1
VR
D.C.
t
D=t/T
D=0.8
VR=160V
Tj=150°C
T
D=0.5
half sin wave
D=0.2
0.8
0.6
0.4
0.2
0
D=0.1
D=0.05
0
30
60
90
120
150
CASE TEMPERATURE:Tl(°C)
DERATING CURVE (Io-Tl)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.10 - Rev.A
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