RF081M2S_11 [ROHM]
Super Fast Recovery Diode; 超快速恢复二极管
| 型号： | RF081M2S_11 |
| 厂家： | 
ROHM |
| 描述： | Super Fast Recovery Diode |
| 文件： | 总4页 (文件大小：977K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Super Fast Recovery Diode
RF081M2S
Land size figure (Unit : mm)
1.2
Series
Dimensions(Unit : mm)
Standard Fast Recovery
0.1±0.1
ꢀꢀꢀ 0.05
1.6±0.1
Applications
General rectification
PMDU
Features
1)Small power mold type. (PMDU)
2)high switching speed
3)Low Reverse current
Structure
0.9±0.1
0.8±0.1
ROHM : PMDU
JEDEC :SOD-123
Manufacture Date
Construction
Silicon epitaxial planar
Taping dimensions(Unit : mm)
0.25±0.05
φ1.55±0.05
2.0±0.05
4.0±0.1
4.0±0.1
φ1.0±0.1
1.81±0.1
1.5MAX
Absolute maximum ratings(Tl=25°C)
Parameter
Repetitive peak Reverse voltage
Reverse voltage
Limits
Conditions
Symbol
VRM
Unit
V
200
200
VR
V
Direct voltage
Glass epoxy substrate mounted
0.8
Average rectified forward current
Io
A
1.0
50×50mm Glass epoxy substrate mounted
60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25°C
IFSM
Tj
Forward current surge peak
Junction temperature
Storage temperature
15
A
150
°C
°C
55 to 150
Tstg
Electrical characteristics(Tj=25°C)
Parameter
Conditions
IF=0.8A
Symbol
Min.
－
Typ.
0.83
0.86
0.01
12
Max.
Unit
V
0.95
0.98
10
VF
Forward voltage
IF=1.0A
－
IR
trr
VR=200V
Reverse current
μA
－
IF=0.5A,IR=1A,Irr=0.25*IR
Reverse recovery time
Thermal Resistance
25
ns
－
Rth(j-l)
20
°C/W junction to lead
－
－
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2011.05
Data Sheet
RF081M2S
Electrical characteristics curves
10000
1000
100
10
100
10
1
10
℃
Tj=150
Tj=150℃
f=1MHz
℃
Tj=125
1
Tj=125℃
Tj=25℃
Tj=25℃
0.1
0.01
1
0
5
10
15
20
25
30
200
400
600
800
1000
1200
0
50
100
150
200
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
900
850
800
750
700
100
10
1
60
55
50
45
40
Tj=25℃
IF=1.0A
n=20pcs
Tj=25℃
VR=200V
n=20pcs
Tj=25℃
f=1MHz
VR=0V
n=10pcs
AVE:51.5pF
AVE:818mV
AVE:10.8nA
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
30
25
20
15
10
5
1000
100
10
100
80
60
40
20
0
Tj=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
8.3ms 8.3ms
1cyc
AVE:69.5A
AVE:12.2ns
1
0
1
10
NUMBER OF CYCLES
100
trr DISPERSION MAP
IFSM DISPERSION MAP
IFSM-CYCLE CHARACTERISTICS
1000
100
10
30
25
20
15
10
5
1000
100
10
IM=10mA
1ms
IF=0.5A
No break at 30kV
Rth(j-a)
Ifsm
time
t
300us
Mounted on epoxy board
Rth(j-c)
AVE:13.6kV
1
0
1
0.1
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
1
10
100
0.001
0.01
0.1
1
10
100
1000
TIME:t(ms)
TIME:t(s)
Rth-t CHARACTERISTICS
IFSM-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
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2011.05
Data Sheet
RF081M2S
Io
0A
0V
VR
t
D=t/T
Io
0A
0V
2
1.5
1
VR=160V
Tj=150℃
1
0.8
0.6
2
1.5
1
T
D.C.
VR
t
D=0.8
D=0.5
D=t/T
VR=1６0V
D.C.
D.C.
℃
Tj=150
T
D=0.8
D=0.8
half sin wave
D=0.2
D=0.5
D=0.5
half sin wave
D=0.1
D=0.05
half sin wave
D=0.2
0.4
0.2
0
D=0.2
D=0.1
0.5
0
0.5
0
D=0.1
D=0.05
D=0.05
0
0.5
1
1.5
2
0
30
60
90
120
150
0
30
60
90
120
150
CASE TEMPARATURE:Tc(℃)
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
Derating Curve(Io-Tc)
Io-Pf CHARACTERISTICS
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2011.05
Notice
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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