RF101L2S_11 [ROHM]
Fast Recovery Diode; 快恢复二极管
| 型号： | RF101L2S_11 |
| 厂家： | 
ROHM |
| 描述： | Fast Recovery Diode |
| 文件： | 总4页 (文件大小：1006K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Fast Recovery Diode
RF101L2S
Land size figure (Unit : mm)
Applications
Dimensions(Unit : mm)
General rectification
2.0
2.6±0.2
Features
1)Small power mold type. (PMDS)
2)Ultra low VF
6
6
3)Ultra high switching speed
4)Low switching loss
0.1±0.02
ꢀꢀꢀ 0.1
①
②
PMDS
Structure
2.0±0.2
1.5±0.2
Construction
Silicon epitaxial
ROHM : PMDS
JEDEC : SOD-106
①
②
Manufacture date
Taping dimensions(Unit : mm)
2.0±0.05
4.0±0.1
0.3
φ1.55±0.05
φ1.55
2.9±0.1
4.0±0.1
2.8MAX
Absolute maximum ratings(Ta=25°C)
Parameter
Limits
200
200
1
Symbol
VRM
Unit
Reverse voltage (repetitive)
Reverse voltage (DC)
V
V
VR
Average rectified forward current (*1)
Forward current surge peak (60Hz・1cyc)
Junction temperature
Io
IFSM
A
20
A
150
Tj
°C
°C
Storage temperature
55 to 150
Tstg
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics(Ta=25°C)
Parameter
Forward voltage
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
VF
IR
-
-
-
0.815 0.87
IF=1.0A
Reverse current
0.01
12
10
25
μA
ns
VR=200V
IF=0.5A,IR=1A,Irr=0.25*IR
Reverse recovery time
trr
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.05 - Rev.B
Data Sheet
RF101L2S
100
10
1
Ta=150℃
1
10000
1000
100
10
Ta=125℃
f=1MHz
Ta=150℃
Ta=75℃
0.1
Ta=125℃
Ta=25℃
Ta=75℃
Ta=-25℃
1
0.01
Ta=25℃
0.1
Ta=-25℃
0.01
0.001
0
50
100
150
200
0
100 200 300 400 500 600 700 800 900
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
0
5
10
15
20
REVERSE VOLTAGE:VR(V)
25
30
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
VR-Ct CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
0
100
90
80
70
60
50
40
30
20
10
0
850
840
830
820
810
800
Ta=25℃
VR=200V
n=30pcs
Ta=25℃
Ta=25℃
IF=1A
n=30pcs
f=1MHz
VR=0V
n=10pcs
AVE:11.1nA
AVE:37.0pF
AVE:818.6mV
IR DISPERSION MAP
Ct DISPERSION MAP
VF DISPERSION MAP
200
150
100
50
30
25
20
15
10
5
1000
100
10
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
Ifsm
1cyc
Ifsm
8.3ms 8.3ms
1cyc
8.3ms
AVE:12.2ns
AVE:63.0A
0
0
1
1
10
100
trr DISPERSION MAP
IFSM DISRESION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Mounted on epoxy board
IM=10mA
IF=100mA
1000
100
10
2
1000
Ifsm
t
Rth(j-a)
Rth(j-c)
time
300u
1m
DC
1.5
1
D=1/2
100
10
1
θ＝180)
Sin(
0.5
0
1
0.1
0
0.5
1
1.5
2
0.001 0.01
0.1
1
TIME:t(s)
10
100 1000
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
100
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
Rth-t CHARACTERISTICS
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.05 - Rev.B
Data Sheet
RF101L2S
3
3
2
1
0
30
25
20
15
10
5
Io
0A
0V
Io
0A
0V
No break at 30kV
VR
VR
t
t
D=t/T
VR=100V
Tj=150℃
D=t/T
VR=100V
Tj=150℃
2
T
T
DC
DC
D=1/2
1
D=1/2
AVE:13.6kV
θ＝180)
Sin(
＝180)
50
Sin(θ
0
0
0
25
75
100
125
150
0
25
50
75
100
125
150
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
ESD DISPERSION MAP
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.05 - Rev.B
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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