RF2001T3DFH [ROHM]
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| 型号： | RF2001T3DFH |
| 厂家： | 
ROHM |
| 描述： | 暂无描述 整流二极管 快恢复二极管 PC 局域网 非常快速的恢复二极管 快速恢复二极管 |
| 文件： | 总4页 (文件大小：969K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Fast recovery diodes
RF2001T3D
Applications
Dimensions (Unit : mm)
Structure
General rectification
4.5±0.3
ꢀꢀꢀ 0.1
2.8±0.2
ꢀꢀꢀ 0.1
Features
10.0±0.3
ꢀꢀꢀ 0.1
(1) (2) (3)
1) Cathode common type.
(TO-220)
2) Ultra Low VF
3) Very fast recovery
4) Low switching loss
①
1.2
Construction
Silicon epitaxial planar
1.3
0.8
(1) (2) (3)
0.7±0.1
0.05
2.6±0.5
ROHM : ＴO220FN
Manufacture Date
①
Absoslute maximum ratings (Ta=25C)
Parameter
Limits
300
Symbol
VRM
VR
Unit
V
Reverse voltage (repetitive peak)
Reverse voltage (DC)
300
V
Average rectified forward current (*1)
Forward current surge peak (60Hz/1cyc)
Junction temperature
20
Io
A
100
IFSM
Tj
A
150
C
C
Storage temoerature
55 to 150
Tstg
(*1)Business frequency, Rating of R-load, Tc=113Cꢀ 1/2 Io per diode
Electrical characteristic (Ta=25C)
Parameter
Conditions
IF=10A
Symbol
Min.
Typ.
Max.
Unit
V
Forward voltage
Reverse current
VF
IR
-
-
-
-
-
-
1.3
10
25
μA
ns
VR=300V
IF=0.5A,IR=1A,Irr=0.25*IR
Reverse recovery time
trr
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2011.05 - Rev.D
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1/3
Data Sheet
RF2001T3D
Electrical characteristics curves
Ta=150 C
1000
100
10
10
100000
10000
1000
100
Ta=125C
Ta=150C
f=1MHz
1
Ta=25 C
Ta=125 C
Ta=75C
Ta=75 C
0.1
0.01
Ta=-25 C
Ta=25 C
10
Ta=-25C
1
0.001
0
10 20 30 40 50 60 70 80 90 10 11 12
00 00 00
1
0.1
0
0
0
0
0
0
0
0
0
0
5
10
15
20
25
30
0
50
100
150
200
250
300
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
400
390
380
370
360
350
340
330
320
310
300
300
1.17
1.16
1.15
1.14
1.13
1.12
Ta=25C
f=1MHz
VR=0V
Ta=25C
IF=10A
Ta=25C
VR=300V
n=30pcs
250
200
150
100
50
n=30pcs
n=10pcs
AVE:356.9pF
AVE:29.7nA
AVE:1.135V
0
V
F DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
1000
100
10
30
25
20
15
10
5
200
150
100
50
Ta=25 C
Ifsm
1cyc
IF=0.5A
Ifsm
IR=1A
Irr=0.25*IR
n=10pcs
8.3ms
8.3ms 8.3ms
1cyc
AVE:20.3ns
AVE:157.0A
0
1
0
1
10
NUMBER OF CYCLES
100
trr DISPERSION MAP
IFSM DISPERSION MAP
IFSM-CYCLE CHARACTERISTICS
40
Mounted on epoxy board
100
10
1
1000
100
10
DC
IM=100mA
IF=5A
D=1/2
Ifsm
30
20
10
0
t
Sin( =180)
1ms
time
Rth(j-a)
Rth(j-c)
300us
0.1
0
10
20
30
40
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
TIME:t(ms)
FSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
I
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.D
2/3
Data Sheet
RF2001T3D
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
50
45
40
35
Io
0A
0V
No break at 30kV
Io
0A
0V
VR
t
D=t/T
VR=150V
VR
DC
t
D=t/T
VR=150V
Tj=150
C
T
D=1/2
DC
30
25
20
15
10
5
C
Tj=150
T
D=1/2
Sin(=180)
AVE:11.6kV
Sin(=180)
0
0
0
C=200pF
C=100pF
0
25
50
75
100
125
150
0
25
50
75
100
125
150
R=0
R=1.5k
AMBIENT TEMPERATURE:Ta( C)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Ta)
Derating Curve"(Io-Tc)
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.D
3/3
Notice
N o t e s
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http://www.rohm.com/contact/
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R1120A
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