RF4C100BC [ROHM]
RF4C100BC是低导通电阻、小型大功率封装的中功率MOSFET。适用于开关、负荷开关用途。;型号: | RF4C100BC |
厂家: | ROHM |
描述: | RF4C100BC是低导通电阻、小型大功率封装的中功率MOSFET。适用于开关、负荷开关用途。 开关 |
文件: | 总12页 (文件大小:1402K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RF4C100BC
ꢀꢀPch -20V -10A Middle Power MOSFET
Datasheet
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llOutline
HUML2020L8
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VDSS
-20V
15.6mΩ
±10A
ꢀ
RDS(on)(Max.)
ꢀ
ID
ꢀ
PD
2W
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llInner circuit
llFeatures
1) Low on - resistance.
2) High Power small mold Package
(HUML2020L8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
llApplication
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
3000
TCR
KH
Load switch
Marking
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
-20
Unit
V
VDSS
Drain - Source voltage
Continuous drain current
Pulsed drain current
ID
±10
A
*2
ID,pulse
±36
A
VGSS
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
±8
V
*3
EAS
15.2
-2.0
mJ
A
*3
IAS
*4
PD
Power dissipation
2
W
℃
℃
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
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© 2015 ROHMCo., Ltd. All rights reserved.
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1/11
20150411 - Rev.001
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RF4C100BC
Datasheet
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llThermal resistance
Values
Unit
Parameter
Symbol
Min.
-
Typ. Max.
*4
RthJA
Thermal resistance, junction - ambient
-
62.5 ℃/W
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
V
Min.
-20
Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
GS
= 0V, I = -1mA
D
-
-
ΔV
I = -1mA
ꢀ
ꢀ
(BR)DSS
D
Breakdown voltage
-
-
-10.3
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
DS
= -20V, V = 0V
-1
μA
GS
IGSS
VGS(th)
ΔV
V
V
= ±8V, V = 0V
Gate - Source leakage current
Gate threshold voltage
-
-
-
±100
-1.2
nA
V
GS
DS
= V , I = -1mA
-0.5
DS
GS
D
I = -1mA
D
ꢀ
ꢀ
GS(th)
Gate threshold voltage
temperature coefficient
-
1.7
-
mV/℃
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
V
V
= -4.5V, I = -10A
-
-
-
-
12.0 15.6
15.4 20.0
23.5 37.6
GS
GS
GS
D
Static drain - source
on - state resistance
*5
RDS(on)
= -2.5V, I = -10A
mΩ
D
= -1.8V, I = -2.5A
D
RG
|Y |*5
Gate input resistance
f=1MHz, open drain
4.2
-
Ω
S
Forward Transfer
Admittance
V
DS
= -5V, I = -10A
12
-
-
fs
D
*1 Vgs≧2.5V
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 Tr1: L ⋍ 5mH, V = -10V, R = 25Ω, STARTING T = 25℃ Fig.3-1,3-2
DD
G
j
*4 MOUNTED ON 40mm×40mm×0.8mm Cu BOARD
*5 Pulsed
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© 2015 ROHMCo., Ltd. All rights reserved.
2/11
20150411 - Rev.001
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RF4C100BC
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
1660
320
280
16
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= -10V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
*5
td(on)
V
⋍ -10V,V = -4.5V
DD GS
tr*5
I = -5.0A
43
D
ns
*5
td(off)
R ⋍ 2.0Ω
Turn - off delay time
Fall time
110
86
L
tf*5
R = 10Ω
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
23.5
2.6
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*5
Qg
Total gate charge
-
-
-
-
-
-
V
⋍ -10V,
I = -10A,
DD
*5
Qgs
Gate - Source charge
Gate - Drain charge
D
V
GS
= -4.5V
*5
Qgd
8.0
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
IS
Conditions
Unit
A
Min.
-
Max.
Body diode continuous
forward current
-
-1.67
T = 25℃
a
Body diode
pulse current
*2
ISP
-
-
-
-
-36
A
V
*5
VSD
V
GS
= 0V, I = -1.67A
S
Forward voltage
-1.2
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© 2015 ROHMCo., Ltd. All rights reserved.
3/11
20150411 - Rev.001
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RF4C100BC
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
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Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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© 2015 ROHMCo., Ltd. All rights reserved.
4/11
20150411 - Rev.001
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RF4C100BC
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/11
20150411 - Rev.001
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RF4C100BC
Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Transconductance vs. Drain Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/11
20150411 - Rev.001
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RF4C100BC
Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
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© 2015 ROHMCo., Ltd. All rights reserved.
7/11
20150411 - Rev.001
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RF4C100BC
Datasheet
llElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Fig.17 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
ꢀResistance vs. Drain Current(Ⅳ)
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© 2015 ROHMCo., Ltd. All rights reserved.
8/11
20150411 - Rev.001
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RF4C100BC
Datasheet
llElectrical characteristic curves
Fig.18 Typical Capacitance vs. Drain -
Fig.19 Switching Characteristics
ꢀSource Voltage
Fig.20 Dynamic Input Characteristics
Fig.21 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
9/11
20150411 - Rev.001
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RF4C100BC
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
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llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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© 2015 ROHMCo., Ltd. All rights reserved.
10/11
20150411 - Rev.001
RF4C100BC
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Datasheet
llDimensions
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© 2015 ROHMCo., Ltd. All rights reserved.
11/11
20150411 - Rev.001
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