RFUS20TM6S_11 [ROHM]
Super Fast Recovery Diode; 超快速恢复二极管
| 型号： | RFUS20TM6S_11 |
| 厂家： | 
ROHM |
| 描述： | Super Fast Recovery Diode |
| 文件： | 总4页 (文件大小：1012K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Super Fast Recovery Diode
RFUS20TM6S
Series
Dimensions(Unit : mm)
Structure
+0.3
-0.1
+0.3
-0.1
Ultra Fast Recovery
+0.2
-0.1
Applications
(1) (2) (3)
General rectification
Features
1)Cathode Common Single type.(TO-220)
2)Ultra High switching speed
(1) (2) (3)
+0.1
-0.05
Construction
Silicon epitaxial planar
Absolute maximum ratings(Tc=25C)
Parameter
Conditions
Duty≦0.5
Limits
600
600
20
Symbol
VRM
VR
Unit
V
Repetitive peak reverse voltage
Reverse voltage
Direct voltage
V
60Hz half sin wave, Resistance load,
Average rectified forward current
Io
A
Tc=50C
60Hz half sin wave, Non-repetitive
IFSM
Forward current surge peak
100
A
one cycle peak value, Tj=25C
Junction temperature
Storage temperature
150
Tj
°C
°C
55 to 150
Tstg
Electrical characteristics(Tj=25C)
Parameter
Conditions
IF=20A
Typ.
2.3
0.05
23
Symbol
VF
Min.
－
Max.
2.8
10
Unit
V
Forward voltage
Reverse current
VR=600V
IR
μA
－
Reverse recovery time
Thermal Resistance
IF=0.5A,IR=1A,Irr=0.25×IR
junction to case
trr
35
ns
－
－
Rth(j-c)
1.8
－
C / W
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2011.06 - Rev.A
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1/3
Data Sheet
RFUS20TM6S
Electrical characteristics curves
100
100000
10000
1000
100
1000
100
10
Tj=125C
Tj=150C
f=1MHz
Tj=150C
Tj=25C
10
Tj=125C
Tj=25C
Tj=75C
Tj=75C
Tj=25C
1
10
1
0.1
0
50
100 150 200 250 300 350
0
1000
2000
3000
4000
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE : VF(mV)
VF-IF CHARACTERISTICS
450
445
440
435
430
425
420
415
410
405
400
1000
100
10
2500
2400
2300
2200
2100
2000
1900
Ta=25C
f=1MHz
VR=0V
Tｊ=25C
IF=20A
Tｊ=25C
VR=600V
n=20pcs
AVE : 2113mV
n=20pcs
n=10pcs
AVE : 415.9pF
AVE : 61.8nA
1
IR DISPERSION MAP
Ct DISPERSION MAP
V
F DISPERSION MAP
1000
100
10
300
250
200
150
100
50
40
35
30
25
20
15
10
Tｊ=25C
IF=0.5A
1cyc
IFSM
IR=1A
Irr=0.25×IR
n=10pcs
8.3ms
IFSM
AVE : 156A
AVE:26.1ns
8.3ms 8.3ms
1cyc.
0
1
1
10
100
IFSM DISRESION MAP
trr DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
1000
100
10
15
12
9
10
IFSM
Rth(j-c)
time
1
AVE : 11.0kV
6
AVE : 1.20kV
3
0
0.1
1
10
100
C=200pF
C=100pF
0.001
0.01
0.1
1
10
100
1000
R=0
R=1.5k
TIME : t(ms)
TIME : t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
IFSM-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
2/3
2011.06 - Rev.A
Data Sheet
RFUS20TM6S
Io
0A
0V
90
80
35
30
25
20
15
10
5
VR
t
D.C.
D=t/T
VR=480V
T
half sin wave
70
Tj=150C
D=0.8
D=0.5
D.C.
60
D=0.2
50
D=0.8
D=0.5
D=0.1
half sin wave
D=0.2
40
30
20
10
0
D=0.05
D=0.05
D=0.1
60
0
0
5
10
15
20
25
30
35
0
30
90
120
150
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
Io-Pf CHARACTERISTICS
CASE TEMPARATURE : Tc(C)
Derating Curve"(Io-Tc)
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© 2011 ROHM Co., Ltd. All rights reserved.
3/3
2011.06 - Rev.A
Notice
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R1120A
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