RFUS20TM6S [ROHM]

Super Fast Recovery Diode; 超快速恢复二极管


型号：	RFUS20TM6S
厂家：	ROHM
描述：	Super Fast Recovery Diode 超快速恢复二极管整流二极管测试局域网超快恢复二极管超快速恢复二极管
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Super Fast Recovery Diode

RFUS20TM6S

Series

Dimensions(Unit : mm)

Structure

+0.3

-0.1

+0.3

-0.1

Ultra Fast Recovery

+0.2

-0.1

Applications

(1) (2) (3)

General rectification

Features

1)Cathode Common Single type.(TO-220)

2)Ultra High switching speed

(1) (2) (3)

+0.1

-0.05

Construction

Silicon epitaxial planar

Absolute maximum ratings(Tc=25C)

Parameter

Conditions

Duty≦0.5

Limits

Symbol

V_RM

V_R

Unit

Repetitive peak reverse voltage

Reverse voltage

600

Direct voltage

60Hz half sin wave, Resistance load,

Average rectified forward current

Tc=50C

60Hz half sin wave, Non-repetitive

I_FSM

Forward current surge peak

100

one cycle peak value, Tj=25C

Junction temperature

Storage temperature

150

C

-55 to 150

Tstg

Electrical characteristics(Tj=25C)

Parameter

Conditions

I_F=20A

Typ.

2.3

0.05

Symbol

V_F

Min.

－

Max.

2.8

Unit

Forward voltage

Reverse current

V_R=600V

I_R

μA

－

Reverse recovery time

Thermal Resistance

I_F=0.5A,I_R=1A,Irr=0.25×I_R

junction to case

trr

－

Rth(j-c)

1.8

－

C / W

www.rohm.com

2010.02 - Rev.A

1/3

RFUS20TM6S

Data Sheet

Electrical characteristics curves

100

100000

10000

1000

100

1000

100

Tj=125C

Tj=150C

f=1MHz

Tj=150C

Tj=25C

Tj=125C

Tj=25C

Tj=75C

Tj=25C

0.1

100 150 200 250 300 350

1000

2000

3000

4000

REVERSE VOLTAGE : V_R(V)

V_R-I_RCHARACTERISTICS

REVERSE VOLTAGE : V_R(V)

V_R-Ct CHARACTERISTICS

FORWARD VOLTAGE : V_F(mV)

V_F-I_FCHARACTERISTICS

450

445

440

435

430

425

420

415

410

405

400

1000

100

2500

2400

2300

2200

2100

2000

1900

Ta=25C

f=1MHz

V_R=0V

Tｊ=25C

I_F=20A

Tｊ=25C

V_R=600V

n=20pcs

AVE : 2113mV

n=20pcs

n=10pcs

AVE : 415.9pF

AVE : 61.8nA

I_RDISPERSION MAP

Ct DISPERSION MAP

V_FDISPERSION MAP

1000

100

300

250

200

150

100

Tｊ=25C

I_F=0.5A

1cyc

I_FSM

I_R=1A

Irr=0.25×I_R

n=10pcs

8.3ms

I_FSM

AVE : 156A

AVE:26.1ns

8.3ms 8.3ms

1cyc.

100

I_FSMDISRESION MAP

trr DISPERSION MAP

NUMBER OF CYCLES

I_FSM-CYCLE CHARACTERISTICS

1000

100

I_FSM

Rth(j-c)

time

AVE : 11.0kV

AVE : 1.20kV

0.1

100

C=200pF

C=100pF

0.001

0.01

0.1

100

1000

R=0

R=1.5k

TIME : t(ms)

TIME : t(s)

Rth-t CHARACTERISTICS

ESD DISPERSION MAP

I_FSM-t CHARACTERISTICS

www.rohm.com

2010.02 - Rev.A

2/3

RFUS20TM6S

Data Sheet

V_R

D.C.

D=t/T

V_R=480V

half sin wave

Tj=150C

D=0.8

D=0.5

D.C.

D=0.2

D=0.8

D=0.5

D=0.1

D=0.05

half sin wave

D=0.2

D=0.05

D=0.1

120

150

AVERAGE RECTIFIED

FORWARD CURRENT : Io(A)

Io-Pf CHARACTERISTICS

CASE TEMPARATURE : Tc(C)

Derating Curve"(Io-Tc)

www.rohm.com

3/3

2010.02 - Rev.A

Notice

N o t e s

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which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

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The Products speciﬁed in this document are intended to be used with general-use electronic

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