RGCL80TK60_技术文档

RGCL80TK60

600V 40A Field Stop Trench IGBT

Data Sheet

lOutline

TO-3PFM

V_CES

I_C(100°C)

V_{CE(sat) (Typ.)}

P_D

600V

21A

1.4V@I_C=40A

57W

(1)(2)(3)

lFeatures

lInner Circuit

1) Low Collector - Emitter Saturation Voltage

2) Soft Switching

(2)

(3)

(1) Gate

(2) Collector

(3) Emitter

(1)

3) Pb - free Lead Plating ; RoHS Compliant

lApplications

lPackaging Specifications

Partial Switching PFC

Packaging

Tube

Discharge Circuit

Brake for Inverter

Reel Size (mm)

-

Tape Width (mm)

Type

-

450

Basic Ordering Unit (pcs)

Packing Code

Marking

C11

RGCL80TK60

lAbsolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

Unit

V

600

Gate - Emitter Voltage

V

30

T_C= 25°C

35

A

Collector Current

T_C= 100°C

I_C

21

160

A

*1

Pulsed Collector Current

Power Dissipation

A

I_CP

T_C= 25°C

P_D

T_j

57

W

°C

T_C= 100°C

28

Operating Junction Temperature

-40 to +175

-55 to +175

T_stg

Storage Temperature

*1 Pulse width limited by T_jmax.

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2016.01 - Rev.A

1/9

Data Sheet

RGCL80TK60

lThermal Resistance

Values

Typ.

-

Parameter

Thermal Resistance IGBT Junction - Case

Symbol

R_θ(j-c)

Unit

Min.

-

Max.

2.62

°C/W

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

V

Min.

600

Max.

-

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

-

I_CES

V_CE= 600V, V_GE= 0V

Collector Cut - off Current

-

10

200

6.5

μA

nA

V

I_GES

V_GE= 30V, V_CE= 0V

Gate - Emitter Leakage Current

-

Gate - Emitter Threshold

Voltage

V_GE(th)V_CE= 5V, I_C= 30.0mA

4.5

5.5

I_C= 40A, V_GE= 15V

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

-

1.4

1.6

1.8

-

V

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2016.01 - Rev.A

2/9

Data Sheet

RGCL80TK60

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

2340

55

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_ies

C_oes

C_res

Q_g

V_CE= 30V

Input Capacitance

-

V_GE= 0V

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

pF

nC

f = 1MHz

43

V_CE= 300V

98

Q_ge

Q_gc

t_d(on)

t_r

I_C= 40A

20

V_GE= 15V

38

I_C= 40A, V_CC= 400V

V_GE= 15V, R_G= 10Ω

T_j= 25°C

53

34

ns

mJ

ns

t_d(off)

t_f

Turn - off Delay Time

Fall Time

227

204

1.11

1.68

48

Inductive Load

*E_onincludes diode

reverse recovery

I_C= 40A, V_CC= 400V

V_GE= 15V, R_G= 10Ω

T_j= 175°C

E_on

E_off

t_d(on)

t_r

Turn - on Switching Loss

Turn - off Switching Loss

Turn - on Delay Time

Rise Time

66

t_d(off)

t_f

Turn - off Delay Time

Fall Time

255

310

1.51

2.30

Inductive Load

*E_onincludes diode

reverse recovery

I_C= 160A, V_CC= 480V

V_P= 600V, V_GE= 15V

R_G= 60Ω, T_j= 175°C

E_on

E_off

Turn - on Switching Loss

Turn - off Switching Loss

mJ

-

Reverse Bias Safe Operating Area

RBSOA

FULL SQUARE

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2016.01 - Rev.A

3/9

Data Sheet

RGCL80TK60

lElectrical Characteristic Curves

Fig.1 Power Dissipation vs. Case Temperature

Fig.2 Collector Current vs. Case Temperature

80

50

40

30

20

10

60

40

20

0

ꢀ

T_j≦175ºC

_GE≧15V

V

0

25

50

75 100 125 150 175

0

25

50

75 100 125 150 175

Case Temperature : T_C[ºC]

Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area

1000

200

180

160

140

120

100

80

10µs

100

10

100µs

1

60

0.1

0.01

40

T_C= 25ºC

Single Pulse

T_j≦175ºC

V_GE=15V

20

0

1

10

100

1000

0

200

400

600

800

Collector To Emitter Voltage : V_CE[V]

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2016.01 - Rev.A

4/9

Data Sheet

RGCL80TK60

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

160

T_j= 175ºC

T_j= 25ºC

V_GE= 20V

= 15V

140

120

100

80

140

V

V_G_G_E_E= 15V

V_GE= 20V

120

100

80

60

40

20

0

V_GE= 12V

V_GE= 10V

V_GE= 8V

V_GE= 15V

V_GE= 12V

V_GE= 10V

V_GE= 8V

60

40

20

0

1

2

3

4

5

0

1

2

3

4

5

Collector To Emitter Voltage : V_CE[V]

Fig.7 Typical Transfer Characteristics

Fig.8 Typical Collector To Emitter Saturation Voltage

vs. Junction Temperature

60

4

V_CE= 10V

V_GE= 15V

50

40

30

20

10

0

3

I_C= 80A

2

I_C= 40A

T_j= 175ºC

1

0

I_C= 20A

T_j= 25ºC

0

2

4

6

8

10

12

25

50

75

100

125

150

175

Gate To Emitter Voltage : V_GE[V]

Junction Temperature : T_j[ºC]

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2016.01 - Rev.A

5/9

Data Sheet

RGCL80TK60

lElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation Voltage

Fig.10 Typical Collector To Emitter Saturation Voltage

vs. Gate To Emitter Voltage

20

T_j= 175ºC

T_j= 25ºC

I_C= 80A

15

I_C= 80A

I_C= 40A

10

I_C= 40A

I_C= 20A

5

0

5

10

15

20

5

10

15

20

Gate To Emitter Voltage : V_GE[V]

Fig.12 Typical Switching Time

vs. Gate Resistance

1000

Fig.11 Typical Switching Time

vs. Collector Current

1000

t_f

t_d(off)

100

t_r

t_d(on)

V_CC=400V, V_GE=15V

R_G=10Ω, T_j=175ºC

Inductive ｌoad

V_CC=400V, I_C=40A

V_GE=15V, T_j=175ºC

Inductive ｌoad

t_r

10

0

10

20

30

40

50

0

10 20 30 40 50 60 70 80

Collector Current : I_C[A]

Gate Resistance : R_G[Ω]

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2016.01 - Rev.A

6/9

Data Sheet

RGCL80TK60

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

Fig.14 Typical Switching Energy Losses

vs. Collector Current

vs. Gate Resistance

10

E_off

1

E_on

0.1

0.01

V_CC=400V, I_C=40A

V_GE=15V, T_j=175ºC

V_CC=400V, V_GE=15V

R_G=10Ω, T_j=175ºC

Inductive ｌoad

0.01

0

10 20 30 40 50 60 70 80

Collector Current : I_C[A]

0

10

20

30

40

50

Gate Resistance : R_G[Ω]

Fig.15 Typical Capacitance

vs. Collector To Emitter Voltage

Fig.16 Typical Gate Charge

10000

1000

100

10

15

10

5

Cies

Coes

Cres

f=1MHz

V_GE=0V

T_j=25ºC

V_CC=300V

I_C=40A

T_j=25ºC

1

0

0.01

0.1

1

10

100

0

10 20 30 40 50 60 70 80 90 100

Gate Charge : Q_g[nC]

Collector To Emitter Voltage : V_CE[V]

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2016.01 - Rev.A

7/9

Data Sheet

RGCL80TK60

lElectrical Characteristic Curves

Fig.17 IGBT Transient Thermal Impedance

10

1

D= 0.5

0.2

0.1

P_DM

0.1

0.01

Single Pulse

0.01

t1

0.02

t2

Duty=t1/t2

Peak T_j=P_DM×Z_thJC+T_C

0.05

0.0001

0.001

0.01

0.1

1

10

100

Pulse Width : t1[s]

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2016.01 - Rev.A

8/9

Data Sheet

RGCL80TK60

lInductive Load Switching Circuit and Waveform

Gate Drive Time

90%

V_GE

D.U.T.

10%

VG

90%

10%

I_C

Fig.18 Inductive Load Circuit

t_d(off)

t_d(on)

t_r

t_f

t_on

t_off

V_CE

10%

V_CE(sat)

E_on

E_off

Fig.19 Inductive Load Waveform

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2016.01 - Rev.A

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-

cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in

this document.

7) The Products specified in this document are not designed to be radiation tolerant.

8) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

9) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

11) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

12) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

13) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1102

A


型号：	RGCL80TK60
厂家：	ROHM
描述：	罗姆的IGBT（绝缘栅极型双极晶体管）产品为广大的高电压、大电流应用的高效化和节能化做出了贡献。栅双极性晶体管栅极
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