RGPR10BM40FH [ROHM]

RGPR10BM40是兼具低Vce(sat)、高雪崩耐性,适用于车载点火用途的高可靠性IGBT产品。;
RGPR10BM40FH
型号: RGPR10BM40FH
厂家: ROHM    ROHM
描述:

RGPR10BM40是兼具低Vce(sat)、高雪崩耐性,适用于车载点火用途的高可靠性IGBT产品。

双极性晶体管
文件: 总9页 (文件大小:1170K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RGPR10BM40FH  
Datasheet  
430V 20A Ignition IGBT  
Outline  
TO-252  
BVCES  
IC  
43030V  
20A  
(2)  
(1)  
VCE(sat) (Typ.)  
EAS  
1.6V  
(3)  
250mJ  
Features  
Inner Circuit  
(2)  
1) Low Collector - Emitter Saturation Voltage  
2) High Self-Clamped Inductive Switching Energy  
3) Built in Gate-Emitter Protection Diode  
4) Built in Gate-Emitter Resistance  
(1) Gate  
(2) Collector  
(3) Emitter  
(1)  
(3)  
5) Qualified to AEC-Q101  
6) Pb - free Lead Plating ; RoHS Compliant  
Packaging Specifications  
Packaging  
Taping  
Reel Size (mm)  
330  
16  
Applications  
Ignition Coil Driver Circuits  
Tape Width (mm)  
Type  
Solenoid Driver Circuits  
Basic Ordering Unit (pcs)  
2,500  
Packing Code  
Marking  
TL  
RGPR10BM40  
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)  
Parameter  
Collector - Emitter Voltage  
Symbol  
VCES  
VEC  
Value  
460  
Unit  
V
Emitter-Collector Voltage (VGE = 0V)  
Gate - Emitter Voltage  
25  
V
VGE  
V
10  
IC  
Collector Current  
20  
A
Tj = 25°C  
EAS  
250  
mJ  
mJ  
W
°C  
°C  
Avalanche Energy (Single Pulse)  
*2  
Tj = 150°C  
150  
EAS  
PD  
Tj  
Power Dissipation  
107  
Operating Junction Temperature  
Storage Temperature  
40 to +175  
55 to +175  
Tstg  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2015.10 - Rev.A  
1/8  
Data Sheet  
RGPR10BM40FH  
Thermal Resistance  
Values  
Typ.  
Parameter  
Symbol  
Rθ(j-c)  
Unit  
Min.  
-
Max.  
Thermal Resistance Junction - Case  
-
1.40  
°C/W  
Electrical Characteristics (at Tj = 25°C unless otherwise specified)  
Values  
Typ.  
Parameter  
Symbol  
Conditions  
Unit  
Min.  
Max.  
IC = 2mA, VGE = 0V  
Collector - Emitter Breakdown  
Voltage  
BVCES Tj = 25°C  
Tj = 40 to 175°C*2  
400  
395  
430  
-
460  
465  
V
V
Emitter - Collector Breakdown  
Voltage  
BVEC  
IC = 10mA, VGE = 0V  
IG = 5mA, VCE = 0V  
25  
35  
-
-
V
V
Gate - Emitter Breakdown  
Voltage  
BVGES  
±17  
12  
VCE = 300V, VGE = 0V  
Tj = 25°C  
ICES  
Collector Cut - off Current  
-
-
-
-
7
μA  
μA  
Tj = 150°C*2  
100  
IGES  
VGE = 10V, VCE = 0V  
Gate - Emitter Leakage Current  
mA  
0.4  
0.6  
1.2  
VCE = 5V, IC = 10mA  
Gate - Emitter Threshold  
Voltage  
VGE(th) Tj = 25°C  
Tj = 150°C  
1.3  
-
1.7  
1.3  
2.1  
-
V
V
IC = 10A, VGE = 5V  
Collector - Emitter Saturation  
Voltage  
VCE(sat) Tj = 25°C  
Tj = 150°C  
-
-
1.60  
1.80  
2.00  
-
V
V
IC = 4A, VGE = 4.5V  
Collector - Emitter Saturation  
Voltage  
VCE(sat) Tj = 25°C  
Tj = 150°C  
-
-
1.17  
1.13  
1.50  
-
V
V
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2015.10 - Rev.A  
2/8  
Data Sheet  
RGPR10BM40FH  
Electrical Characteristics (at Tj = 25°C unless otherwise specified)  
Values  
Typ.  
Parameter  
Symbol  
Conditions  
Unit  
Min.  
Max.  
IC = 10A, VGE = 4V  
Collector - Emitter Saturation  
Voltage  
VCE(sat) Tj = 25°C  
Tj = 150°C  
-
-
-
-
-
1.70  
1.90  
1000  
175  
55  
2.10  
V
V
-
-
-
-
Cies  
Coes  
Cres  
VCE = 10V  
VGE = 0V  
f = 1MHz  
Input Capacitance  
Output Capacitance  
pF  
nC  
Reverse Transfer Capacitance  
VCE = 15V, IC = 10A,  
VGE = 5V  
Qg  
Total Gate Charge  
-
14  
-
Turn - on Delay Time*1,*2  
Rise Time*1,*2  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
0.09  
0.17  
0.18  
1.3  
0.50  
IC = 8A, VCC = 300V,  
VGE = 5V, RG = 100,  
L=5mH, Tj=25°C  
0.10  
0.50  
μs  
μs  
Turn - off Delay Time*1,*2  
Fall Time*1,*2  
0.8  
4.0  
1.4  
2.4  
6.0  
Turn - on Delay Time*1  
Rise Time*1  
-
-
-
-
0.16  
0.23  
1.5  
-
-
-
-
IC = 8A, VCC = 300V,  
VGE = 5V, RG = 100,  
L=5mH, Tj=150°C  
Turn - off Delay Time*1  
Fall Time*1  
3.9  
L = 5mH, VGE = 5V,  
VCC = 30V, RG = 1k,  
EAS  
Avalanche Energy (Single Pulse)  
Tj = 25°C  
250  
150  
-
-
-
-
mJ  
mJ  
Tj = 150°C*2  
RG  
Gate Series Resistance  
Gate - Emitter Resistance  
70  
8
100  
16  
130  
24  
RGE  
kΩ  
*1) Assurance items according to our measurement definition (Fig.16)  
*2) Design assurance items  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2015.10 - Rev.A  
3/8  
Data Sheet  
RGPR10BM40FH  
Electrical Characteristic Curves  
Fig.1 Typical Output Characteristics  
Fig.2 Typical Output Characteristics  
30  
30  
Tj= 25ºC  
T=175ºC  
j
VGE= 10V  
VGE= 10V  
25  
25  
20  
15  
10  
5
VGE= 8V  
VGE= 8V  
VGE= 5V  
VGE= 4V  
VGE= 5V  
20  
15  
10  
5
VGE= 4.5V  
VGE= 4.5V  
VGE= 3.5V  
VGE= 4V  
VGE= 3.5V  
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]  
Collector To Emitter Voltage : VCE[V]  
Fig.3 Typical Collector To Emitter Saturation  
Voltage vs. Junction Temperature  
Fig.4 Typical Collector To Emitter Saturation  
Voltage vs. Junction Temperature  
2.3  
1.5  
IC= 10A  
IC= 5A  
2.2  
2.1  
2
1.4  
VGE= 3.5V  
VGE= 3.5V  
4V  
4V  
4.5V  
1.9  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.3  
1.2  
4.5V  
5V  
8V  
10V  
1.1  
1
5V  
8V  
10V  
0
25 50 75 100 125 150 175 200  
Junction Temperature : Tj [ºC]  
0
25 50 75 100 125 150 175 200  
Junction Temperature : Tj [ºC]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2015.10 - Rev.A  
4/8  
Data Sheet  
RGPR10BM40FH  
Electrical Characteristic Curves  
Fig.5 Typical Collector To Emitter Saturation Voltage  
Fig.6 Typical Transfer Characteristics  
vs. Junction Temperature  
2.5  
20  
VCE= 5V  
VGE= 5V  
2
15  
10  
5
IC= 10A  
1.5  
IC= 4.5A  
1
IC= 1A  
0.5  
Tj= 175ºC  
Tj= 25ºC  
3
0
0
0
25 50 75 100 125 150 175 200  
Junction Temperature : Tj [ºC]  
0
1
2
4
5
Gate To Emitter Voltage : VGE [V]  
Fig.7 Typical Gate To Emitter Threshold Voltage  
Fig.8 Typical Leakage Current  
vs. Junction Temperature  
vs. Junction Temperature  
2.5  
10000  
VCE= 5V  
2.3  
IC= 10mA  
2.1  
1000  
100  
10  
VEC= 25V  
1.9  
1.7  
1.5  
1.3  
1.1  
0.9  
0.7  
0.5  
1
VCES= 300V  
0.1  
0.01  
-50 -25  
0
25 50 75 100 125 150 175 200  
-50 -25  
0
25 50 75 100 125 150 175 200  
Junction Temperature : Tj [ºC]  
Junction Temperature : Tj [ºC]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2015.10 - Rev.A  
5/8  
Data Sheet  
RGPR10BM40FH  
Electrical Characteristic Curves  
Fig.9 Typical Collector To Emitter Breakdown  
Fig.10 Typical Self Clamped Inductive  
Switching Current vs. Inductance  
Voltage vs. Junction Temperature  
460  
40  
VGE= 0V  
450  
VCC= 30V  
VGE= 5V  
RG= 1k  
35  
30  
25  
20  
15  
10  
5
440  
ICES= 2mA  
430  
420  
410  
400  
0
-50 -25  
0
25 50 75 100 125 150 175 200  
0
1
2
3
4
5
6
7
8
9
10  
Junction Temperature : Tj [ºC]  
Inductance : L [mH]  
Fig.11 Typical Gate Charge  
Fig.12 Typical Capacitance  
vs. Collector To Emitter Voltage  
5
4
3
2
1
0
10000  
1000  
100  
10  
Cies  
Coes  
f= 1MHz  
VGE= 0V  
Tj= 25ºC  
VCC= 12V  
IC= 10A  
Tj= 25ºC  
Cres  
10  
1
0.01  
0
5
10  
15  
0.1  
1
100  
Gate Charge : Qg [nC]  
Collector To Emitter Voltage : VCE[V]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2015.10 - Rev.A  
6/8  
Data Sheet  
RGPR10BM40FH  
Electrical Characteristic Curves  
Fig.13 Typical Switching Time  
vs. Junction Temperature  
10  
VCC= 30V, IC= 8A,  
VGE= 5V, L= 5mH,  
Rg= 100Ω  
tf  
td(off)  
1
tr  
td(on)  
0.1  
0
25 50 75 100 125 150 175 200  
Junction Temperature : Tj [ºC]  
Fig.14 Transient Thermal Impedance  
10  
1
D= 0.5  
0.1  
0.2  
0.3  
0.1  
PDM  
Single Pulse  
0.01  
t1  
0.01  
0.001  
0.02  
0.05  
t2  
Duty=t1/t2  
Peak Tj=PDM×ZthJCTC  
C1  
C2  
C3  
R1  
R2  
R3  
1.472m 983.8u 3.844m 391.6m 985.3m 23.10m  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width : t1[s]  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2015.10 - Rev.A  
7/8  
Data Sheet  
RGPR10BM40FH  
Inductive Load Switching Circuit and Waveform  
Gate Drive Time  
90%  
VGE  
10%  
90%  
D.U.T.  
IC  
10%  
td(off)  
tf  
td(on)  
VG  
tr  
toff  
ton  
Fig.15 Inductive Load Switching Circuit  
VCE  
VCE(sat)  
Fig.16 Inductive Load Switching Waveform  
Self Clamped Inductive Switching Circuit and Waveform  
Vclamp  
IC  
D.U.T.  
VCE  
VCE(sat)  
VCC  
VG  
EAS  
Fig.18 Self Clamped Inductive Switching Waveform  
Fig.17 Self Clamped Inductive Switching Circuit  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
2015.10 - Rev.A  
8/8  
Notice  
N o t e s  
1) The information contained herein is subject to change without notice.  
2) Before you use our Products, please contact our sales representative and verify the latest specifica-  
tions :  
3) Although ROHM is continuously working to improve product reliability and quality, semicon-  
ductors can break down and malfunction due to various factors.  
Therefore, in order to prevent personal injury or fire arising from failure, please take safety  
measures such as complying with the derating characteristics, implementing redundant and  
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no  
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by  
ROHM.  
4) Examples of application circuits, circuit constants and any other information contained herein are  
provided only to illustrate the standard usage and operations of the Products. The peripheral  
conditions must be taken into account when designing circuits for mass production.  
5) The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,  
any license to use or exercise intellectual property or other rights held by ROHM or any other  
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of  
such technical information.  
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-  
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in  
this document.  
7) The Products specified in this document are not designed to be radiation tolerant.  
8) For use of our Products in applications requiring a high degree of reliability (as exemplified  
below), please contact and consult with a ROHM representative : transportation equipment (i.e.  
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety  
equipment, medical systems, servers, solar cells, and power transmission systems.  
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace  
equipment, nuclear power control systems, and submarine repeaters.  
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with  
the recommended usage conditions and specifications contained herein.  
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this  
document. However, ROHM does not warrants that such information is error-free, and ROHM  
shall have no responsibility for any damages arising from any inaccuracy or misprint of such  
information.  
12) Please use the Products in accordance with any applicable environmental laws and regulations,  
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a  
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting  
non-compliance with any applicable laws or regulations.  
13) When providing our Products and technologies contained in this document to other countries,  
you must abide by the procedures and provisions stipulated in all applicable export laws and  
regulations, including without limitation the US Export Administration Regulations and the Foreign  
Exchange and Foreign Trade Act.  
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of  
ROHM.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
R1102  
A

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