RGS00TS65DHR_技术文档

RGS00TS65D

650V 50A Field Stop Trench IGBT

Data Sheet

lOutline

TO-247N

V_CES

I_C(100°C)

V_{CE(sat) (Typ.)}

P_D

650V

50A

1.65V

326W

(1)(2)(3)

lFeatures

lInner Circuit

1) Low Collector - Emitter Saturation Voltage

2) Short Circuit Withstand Time 8μs

3) Qualified to AEC-Q101

(2)

(3)

(1) Gate

(2) Collector

(3) Emitter

*1

(1)

4) Built in Very Fast & Soft Recovery FRD

5) Pb - free Lead Plating ; RoHS Compliant

*1 Built in FRD

lPackaging Specifications

Packaging

Tube

lApplications

General Inverter

Reel Size (mm)

-

for Automotive and Industrial Use

Tape Width (mm)

Type

Basic Ordering Unit (pcs)

450

C11

Packing Code

RGS00TS65D

Marking

lAbsolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

Unit

V

650

Gate - Emitter Voltage

V

30

T_C= 25°C

88

A

Collector Current

T_C= 100°C

I_C

50

150

A

*1

Pulsed Collector Current

Diode Forward Current

Diode Pulsed Forward Current

Power Dissipation

A

I_CP

T_C= 25°C

I_F

56

A

T_C= 100°C

30

A

*1

150

A

I_FP

T_C= 25°C

P_D

T_j

326

W

°C

T_C= 100°C

163

Operating Junction Temperature

-40 to +175

-55 to +175

T_stg

Storage Temperature

*1 Pulse width limited by T_jmax.

www.rohm.com

2016.07 - Rev.A

1/11

Data Sheet

RGS00TS65D

lThermal Resistance

Values

Parameter

Symbol

Unit

Min.

Typ.

Max.

R_θ(j-c)

Thermal Resistance IGBT Junction - Case

Thermal Resistance Diode Junction - Case

-

0.46

1.17

°C/W

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

V

Min.

650

Max.

-

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

-

V_CE= 650V, V_GE= 0V

I_CES

T_j= 25°C

Collector Cut - off Current

-

10

5

μA

T_j= 175°C

mA

I_GES

V_GE= 30V, V_CE= 0V

Gate - Emitter Leakage Current

-

±200

7.0

nA

V

Gate - Emitter Threshold

Voltage

V_GE(th)V_CE= 5V, I_C= 2.5mA

5.0

6.0

I_C= 50A, V_GE= 15V

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

-

1.65

2.15

2.10

-

V

www.rohm.com

2016.07 - Rev.A

2/11

Data Sheet

RGS00TS65D

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

1568

134

23

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_ies

C_oes

C_res

Q_g

V_CE= 30V

Input Capacitance

-

V_GE= 0V

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

pF

nC

f = 1MHz

V_CE= 300V

58

Q_ge

Q_gc

t_d(on)

t_r

I_C= 50A

15

V_GE= 15V

24

I_C= 50A, V_CC= 400V

V_GE= 15V, R_G= 10Ω

T_j= 25°C

36

21

ns

mJ

ns

t_d(off)

t_f

Turn - off Delay Time

Fall Time

115

91

Inductive Load

*E_onincludes diode

reverse recovery

I_C= 50A, V_CC= 400V

V_GE= 15V, R_G= 10Ω

T_j= 175°C

E_on

E_off

t_d(on)

t_r

Turn - on Switching Loss

Turn - off Switching Loss

Turn - on Delay Time

Rise Time

1.46

1.29

37

33

t_d(off)

t_f

Turn - off Delay Time

Fall Time

145

147

1.97

1.85

Inductive Load

*E_onincludes diode

reverse recovery

I_C= 150A, V_CC= 520V

V_P= 650V, V_GE= 15V

R_G= 50Ω, T_j= 175°C

E_on

E_off

Turn - on Switching Loss

Turn - off Switching Loss

mJ

-

Reverse Bias Safe Operating Area

RBSOA

FULL SQUARE

V

_CC≦ 360V

V_GE= 15V, T_j= 25°C

_CC≦ 360V

V_GE= 15V, T_j= 150°C

t_sc

Short Circuit Withstand Time

8

6

-

μs

V

*2

t_sc

*2 Design assurance without measurement

www.rohm.com

2016.07 - Rev.A

3/11

Data Sheet

RGS00TS65D

lFRD Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

I_F= 30A

V_F

T_j= 25°C

Diode Forward Voltage

Diode Reverse Recovery Time

-

1.45

1.55

1.90

-

V

T_j= 175°C

t_rr

-

103

7.1

0.4

15

-

ns

A

I_F= 30A

Diode Peak Reverse Recovery

Current

I_rr

V_CC= 400V

di_F/dt = 200A/μs

T_j= 25°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

t_rr

μC

μJ

ns

A

Diode Reverse Recovery Energy

Diode Reverse Recovery Time

242

9.8

1.3

113

I_F= 30A

Diode Peak Reverse Recovery

Current

I_rr

V_CC= 400V

di_F/dt = 200A/μs

T_j= 175°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

μC

μJ

Diode Reverse Recovery Energy

www.rohm.com

2016.07 - Rev.A

4/11

Data Sheet

RGS00TS65D

lElectrical Characteristic Curves

Fig.1 Power Dissipation vs. Case Temperature

Fig.2 Collector Current vs. Case Temperature

340

320

300

280

260

240

220

200

180

160

140

120

100

80

100

90

80

70

60

50

40

30

20

60

40

20

ꢀ

T_j≦175ºC

_GE≧15V

10

V

0

25

50

75 100 125 150 175

0

25

50

75 100 125 150 175

Case Temperature : T_C[ºC]

Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area

160

1000

10µs

140

120

100

80

100

10

100µs

1

60

40

0.1

T_C= 25ºC

Single Pulse

T_j≦175ºC

20

V_GE=15V

0

0.01

0

200

400

600

800

1

10

100

1000

Collector To Emitter Voltage : V_CE[V]

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2016.07 - Rev.A

5/11

Data Sheet

RGS00TS65D

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

150

T_j= 25ºC

T_j= 175ºC

135

120

105

90

75

60

45

30

15

0

V_GE= 12V

V_GE= 20V

V_GE= 15V

120

105

90

75

60

45

30

15

0

V_GE= 15V

V_GE= 12V

V_GE= 10V

V_GE= 8V

0

1

2

3

4

5

0

1

2

3

4

5

Collector To Emitter Voltage : V_CE[V]

Fig.7 Typical Transfer Characteristics

Fig.8 Typical Collector To Emitter Saturation Voltage

vs. Junction Temperature

80

4

V_GE= 15V

V_CE= 10V

70

60

50

40

30

20

10

0

3

I_C= 100A

I_C= 50A

2

I_C= 25A

1

T_j= 175ºC

T_j= 25ºC

0

25

50

75

100

125

150

175

0

2

4

6

8

10

12

14

Gate To Emitter Voltage : V_GE[V]

Junction Temperature : T_j[ºC]

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2016.07 - Rev.A

6/11

Data Sheet

RGS00TS65D

lElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation Voltage

Fig.10 Typical Collector To Emitter Saturation Voltage

vs. Gate To Emitter Voltage

20

T_j= 25ºC

T_j= 175ºC

I_C= 100A

15

I_C= 100A

I_C= 50A

10

I_C= 25A

5

0

5

0

5

10

15

20

5

10

15

20

Gate To Emitter Voltage : V_GE[V]

Fig.12 Typical Switching Time

vs. Gate Resistance

Fig.11 Typical Switching Time

vs. Collector Current

1000

t_d(off)

t_f

100

10

1

100

10

1

t_d(off)

t_d(on)

t_r

V_CC=400V, V_GE=15V

R_G=10Ω, T_j=175ºC

Inductive ｌoad

V_CC=400V, I_C=50A

V_GE=15V, T_j=175ºC

Inductive ｌoad

0

10 20 30 40 50 60 70 80

Collector Current : I_C[A]

0

10

20

30

40

50

Gate Resistance : R_G[Ω]

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2016.07 - Rev.A

7/11

Data Sheet

RGS00TS65D

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

Fig.14 Typical Switching Energy Losses

vs. Gate Resistance

vs. Collector Current

10

E_on

E_off

1

E_on

0.1

0.01

0.1

V_CC=400V, V_GE=15V

R_G=10Ω, T_j=175ºC

Inductive ｌoad

V_CC=400V, I_C=50A

V_GE=15V, T_j=175ºC

Inductive ｌoad

0.01

0

10

20

30

40

50

0

10 20 30 40 50 60 70 80

Collector Current : I_C[A]

Gate Resistance : R_G[Ω]

Fig.16 Typical Gate Charge

Fig.15 Typical Capacitance

vs. Collector To Emitter Voltage

15

10

5

10000

1000

100

10

200V

300V

Cies

400V

Coes

Cres

f=1MHz

V_GE=0V

T_j=25ºC

I_C=50A

T_j=25ºC

0

1

0

10

20

30

40

50

60

0.01

0.1

1

10

100

Collector To Emitter Voltage : V_CE[V]

Gate Charge : Q_g[nC]

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2016.07 - Rev.A

8/11

Data Sheet

RGS00TS65D

lElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current

Fig.18 Typical Diode Reverse Recovery Time

vs. Forward Current

vs. Forward Voltage

150

400

120

90

300

200

100

0

T_j= 175ºC

T_j= 25ºC

60

30

V_CC=400V

di_F/dt=200A/µs

Inductive ｌoad

T_j= 175ºC

T_j= 25ºC

1.5

Forward Voltage : V_F[V]

0

0.5

1

2

2.5

3

3.5

0

10

20

30

40

50

60

Forward Current : I_F[A]

Fig.19 Typical Diode Reverse Recovery Current

Fig.20 Typical Diode Reverse Recovery Energy

vs. Forward Current

Losses vs. Forward Current

20

0.6

R_G=10Ω

V_CC=400V

T_j= 175ºC

Inductive ｌoad

0.5

15

R_G=20Ω

0.4

T_j= 175ºC

10

0.3

0.2

0.1

0

R_G=50Ω

5

V_CC=400V

di_F/dt=200A/µs

Inductive ｌoad

T_j= 25ºC

10

0

10

20

30

40

50

60

0

20

30

40

50

60

Forward Current : I_F[A]

www.rohm.com

2016.07 - Rev.A

9/11

Data Sheet

RGS00TS65D

lElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance

10

1

D= 0.5

0.2

0.1

P_DM

0.1

0.01

t1

t2

Duty=t1/t2

Peak T_j=P_DM×Z_thJC+T_C

Single Pulse

0.01

C1

C2

C3

R1

4.727m 49.61m 75.08m 254.6m 191.9m 13.50m

R2

R3

0.02

0.05

0.0001

0.001

0.01

0.1

1

Pulse Width : t1[s]

Fig.22 Diode Transient Thermal Impedance

10

1

D= 0.5

0.2

0.1

P_DM

0.1

Single Pulse

0.01

t1

t2

0.02

0.05

Duty=t1/t2

Peak T_j=P_DM×Z_thJC+T_C

C1

C2

C3

R1

R2

R3

1.266m 10.51m 49.06m 492.7m 364.8m 312.7m

0.01

0.0001

0.001

0.01

0.1

1

Pulse Width : t1[s]

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2016.07 - Rev.A

10/11

Data Sheet

RGS00TS65D

lInductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

V_GE

D.U.T.

10%

VG

90%

I_C

Fig.23 Inductive Load Circuit

10%

t_d(off)

t_f

t_d(on)

t_r

t_on

t_off

t_{rr ,}Q_rr

I_F

V_CE

di_F/dt

10%

V_CE(sat)

I_rr

E_on

E_off

Fig.25 Diode Reverce Recovery Waveform

Fig.24 Inductive Load Waveform

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2016.07 - Rev.A

11/11

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1102

B


型号：	RGS00TS65DHR
厂家：	ROHM
描述：	RGS00TS65DHR是一款具有低导通损耗特性的车载IGBT。适用于注重导通损耗的电动压缩机的逆变电路和PTC加热器的开关电路。是符合AEC-Q101标准的高可靠性产品。开关双极性晶体管
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RGS00TS65DHR [ROHM]

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