RGS00TS65EHR [ROHM]

RGS00TS65EHR是一款具有低导通损耗特性的车载IGBT。适用于注重导通损耗的电动压缩机的逆变电路和PTC加热器的开关电路。是符合AEC-Q101标准的高可靠性产品。;


型号：	RGS00TS65EHR
厂家：	ROHM
描述：	RGS00TS65EHR是一款具有低导通损耗特性的车载IGBT。适用于注重导通损耗的电动压缩机的逆变电路和PTC加热器的开关电路。是符合AEC-Q101标准的高可靠性产品。开关双极性晶体管
文件：	总12页 (文件大小：905K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RGS00TS65EHR

650V 50A Field Stop Trench IGBT

Datasheet

lOutline

TO-247N

V_CES

I_{C (100°C)}

V_{CE(sat) (Typ.)}

P_D

650V

50A

1.65V

326W

(1)(2)(3)

lInner Circuit

(2)

(3)

lFeatures

(1) Gate

(2) Collector

(3) Emitter

1) Low Collector - Emitter Saturation Voltage

2) Short Circuit Withstand Time 8μs

3) Qualified to AEC-Q101

(1)

*1 Built in FRD

4) Built in Very Fast & Soft Recovery FRD

5) Pb - free Lead Plating ; RoHS Compliant

lPackaging Specifications

Packaging

Tube

Reel Size (mm)

lApplication

Tape Width (mm)

Type

450

General Inverter

Basic Ordering Unit (pcs)

for Automotive and Industrial Use

Packing Code

Marking

C11

RGS00TS65E

lAbsolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

Unit

650

±30

Gate - Emitter Voltage

T_C= 25°C

Collector Current

T_C= 100°C

I_C

Pulsed Collector Current

Diode Forward Current

Diode Pulsed Forward Current

Power Dissipation

150

I_CP

T_C= 25°C

I_F

T_C= 100°C

150

I_FP

T_C= 25°C

P_D

T_j

326

°C

T_C= 100°C

163

Operating Junction Temperature

Storage Temperature

-40 to +175

-55 to +175

T_stg

*1 Pulse width limited by T_jmax.

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2019.03 - Rev.A

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Datasheet

Unit

RGS00TS65EHR

lThermal Resistance

Values

Parameter

Symbol

Min.

Typ.

Max.

0.46

0.80

R_θ(j-c)

Thermal Resistance IGBT Junction - Case

Thermal Resistance Diode Junction - Case

C/W

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

650

Max.

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

V_CE= 650V, V_GE= 0V,

Tj = 25^oC

I_CES

Collector Cut - off Current

μA

T_j= 175^oC^*2

Gate - Emitter Leakage

Current

I_GESV_GE= ±30V, V_CE= 0V

±200

7.0

Gate - Emitter Threshold

Voltage

V_GE(th)V_CE= 5V, I_C= 2.5mA

5.0

6.0

I_C= 50A, V_GE= 15V,

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

1.65

2.15

2.10

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Datasheet

RGS00TS65EHR

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

1568

134

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_iesV_CE= 30V,

C_oesV_GE= 0V,

Input Capacitance

Output Capacitance

Reverse transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

C_res

Q_g

f = 1MHz

V_CE= 300V,

Q_geI_C= 50A,

Q_gcV_GE= 15V

t_d(on)

I_C= 50A, V_CC= 400V,

V_GE= 15V, R_G= 10Ω,

T_j= 25°C

Inductive Load

*E_oninclude diode

reverse recovery

t_r

t_d(off)

t_f

Turn - off Delay Time

Fall Time

115

E_on

E_off

t_d(on)

t_r

Turn - on Switching Loss

Turn - off Switching Loss

Turn - on Delay Time

Rise Time

1.46

1.29

I_C= 50A, V_CC= 400V,

V_GE= 15V, R_G= 10Ω,

T_j= 175°C

Inductive Load

*E_oninclude diode

reverse recovery

t_d(off)

t_f

Turn - off Delay Time

Fall Time

145

154

2.00

1.87

E_on

E_off

Turn - on Switching Loss

Turn - off Switching Loss

I_C= 150A, V_CC= 520V,

V_P= 650V, V_GE= 15V,

R_G= 50Ω, T_j= 175^oC

Reverse Bias

Safe Operating Area

RBSOA

t_sc

FULL SQUARE

_CC≤ 360V,

V_GE= 15V, T_j= 25^oC

_CC≤ 360V,

V_GE= 15V, T_j= 150^oC

Short Circuit Withstand Time

μs

t_sc

*2 Design assurance without measurement

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2019.03 - Rev.A

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Datasheet

RGS00TS65EHR

lFRD Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

I_F= 50A,

Unit

Min.

Max.

V_F

T_j= 25°C

Diode Forward Voltage

1.45

1.50

1.90

T_j= 175°C

Diode Reverse Recovery

Time

t_rr

113

14.1

0.92

275

256

18.6

2.54

565

Diode Peak Reverse

Recovery Current

I_F= 50A,

I_rr

V_CC= 400V,

di_F/dt = 200A/μs,

T_j= 25°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

t_rr

μC

μJ

Diode Reverse Recovery

Energy

Diode Reverse Recovery

Time

Diode Peak Reverse

Recovery Current

I_F= 50A,

I_rr

V_CC= 400V,

di_F/dt = 200A/μs,

T_j= 175°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

μC

μJ

Diode Reverse Recovery

Energy

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2019.03 - Rev.A

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Datasheet

RGS00TS65EHR

lElectrical Characteristic Curves

Fig.1 Power Dissipation

vs. Case Temperature

350

Fig.2 Collector Current

vs. Case Temperature

100

300

250

200

150

100

T_j≤ 175ºC,

V_GE≥ 15V

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

Fig.3 Forward Bias Safe Operating Area

1000

Fig.4 Reverse Bias Safe Operating Area

200

180

160

140

120

100

10μs

100

100μs

0.1

T_j≤ 175ºC,

V_GE= 15V

T_C= 25ºC

Single Pulse

0.01

200

400

600

800

100

1000

Collector To Emitter Voltage : V_CE[V]

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Datasheet

RGS00TS65EHR

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

150

T_ｊ= 25ºC

T_ｊ= 175ºC

125

V_GE= 20V

V_GE= 15V

V_GE= 12V

V_GE= 20V

V_GE= 15V

V_GE= 12V

100

V_GE= 10V

V_GE= 8V

Collector To Emitter Voltage : V_CE[V]

Fig.8 Typical Collector To Emitter Saturation

Fig.7 Typical Transfer Characteristics

Voltage vs. Junction Temperature

V_GE= 15V

V_CE= 10V

I_C= 100A

I_C= 50A

I_C= 25A

T_j= 175ºC

T_j= 25ºC

25 50 75 100 125 150 175

10 12 14

Gate To Emitter Voltage : V_GE[V]

Junction Temperature : T_j[°C ]

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2019.03 - Rev.A

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Datasheet

RGS00TS65EHR

lElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation

Voltage vs. Gate To Emitter Voltage

Fig.10 Typical Collector To Emitter Saturation

Voltage vs. Gate To Emitter Voltage

T_j= 175ºC

T_j= 25ºC

I_C= 100A

I_C= 50A

I_C= 25A

Gate To Emitter Voltage : V_GE[V]

Fig.11 Typical Switching Time

vs. Collector Current

Fig.12 Typical Switching Time

vs. Gate Resistance

1000

t_d(off)

t_f

100

t_d(off)

t_d(on)

t_r

V_CC= 400V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

V_CC= 400V, V_GE= 15V,

I_C= 50A, T_j= 175ºC

Inductive load

100

Collecter Current : I_C[A]

Gate Resistance : R_G[Ω]

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2019.03 - Rev.A

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Datasheet

RGS00TS65EHR

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

vs. Collector Current

Fig.14 Typical Switching Energy Losses

vs. Gate Resistance

E_on

E_off

E_on

0.1

0.01

V_CC= 400V, I_C= 50A,

V_GE= 15V, T_j= 175ºC

Inductive load

V_CC= 400V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

0.01

100

Collecter Current : I_C[A]

Gate Resistance : R_G[Ω]

Fig.15 Typical Capacitance

vs. Collector To Emitter Voltage

Fig.16 Typical Gate Charge

10000

1000

100

200V

C_ies

300V

400V

C_oes

C_res

f = 1MHz,

V_GE= 0V,

T_j= 25ºC

I_C= 50A,

T_j= 25ºC

0.01

0.1

100

10 20 30 40 50 60

Gate Charge : Q_G[nC]

Collector To Emitter Voltage : V_CE[V]

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2019.03 - Rev.A

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Datasheet

RGS00TS65EHR

lElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current

vs. Forward Voltage

150

Fig.18 Typical Diode Revese Recovery Time

vs. Forward Current

400

V_CC= 400V,

di_F/dt = 200A/μs

Inductive load

125

100

300

200

100

T_j= 175ºC

T_j= 25ºC

T_j= 175ºC

T_j= 25ºC

100

Forward Voltage : V_F[V]

Forward Current : I_F[A]

Fig.19 Typical Diode Reverse Recovery

Fig.20 Typical Diode Rrverse Recovery

ꢀꢀꢀꢀꢀꢀCurrent vs. Forward Current

ꢀꢀꢀꢀꢀEnergy Losses vs. Forward Current

0.9

0.8

0.7

0.6

0.5

T_j= 175ºC

T_j= 25ºC

0.4

R_G= 10Ω

0.3

R_G= 20Ω

0.2

V_CC= 400V,

T_j= 175^oC

Inductive load

R_G= 50Ω

V_CC= 400V,

di_F/dt = 200A/μs

Inductive load

0.1

100

Forward Current : I_F[A]

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2019.03 - Rev.A

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Datasheet

RGS00TS65EHR

lElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance

0.05 0.02

0.1

0.2

D = 0.5

0.1

0.01

P_DM

t₁

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

0.01

Single Pulse

4.727m 49.61m 75.08m 254.6m 191.9m 13.50m

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t₁[s]

Fig.22 Diode Transient Thermal Impedance

D = 0.5

0.1 0.2

0.05

0.1

0.01

P_DM

t₁

Single Pulse

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

0.01

0.02

0.302m 0.396m 2.865m 102.7m 197.9m 499.4m

R2 R3

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t₁[s]

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Datasheet

RGS00TS65EHR

lInductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

10%

V_GE

V_G

90%

10%

Fig.23 Inductive Load Circuit

t_f

I_C

t_d(off)

t_d(on)

t_r

t_{rr ,}Q_rr

t_on

t_off

I_F

V_CE

di_F/dt

10%

V_CE(sat)

I_rr

E_on

E_off

Fig.25 Diode Reverse Recovery Waveform

Fig.24 Inductive Load Waveform

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2019.03 - Rev.A

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1102

RGS00TS65EHR [ROHM]

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