RGS30TSX2 [ROHM]
RGS30TSX2适用于PFC、UPS、IH和功率调节器等,是短路耐量为10µs的产品。RGS系列实现了低导通损耗(Vce(sat.)),有助于应用的小型、高效化。;型号: | RGS30TSX2 |
厂家: | ROHM |
描述: | RGS30TSX2适用于PFC、UPS、IH和功率调节器等,是短路耐量为10µs的产品。RGS系列实现了低导通损耗(Vce(sat.)),有助于应用的小型、高效化。 功率因数校正 调节器 |
文件: | 总10页 (文件大小:1190K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGS30TSX2
1200V 15A Field Stop Trench IGBT
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
1200V
15A
1.7V
267W
(1)(2)(3)
lInner Circuit
(2)
(3)
lFeatures
(1) Gate
(2) Collector
(3) Emitter
1) Low Collector - Emitter Saturation Voltage
2) Short Circuit Withstand Time 10μs
(1)
3) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Tube
lApplication
Reel Size (mm)
-
PFC
Tape Width (mm)
Type
-
450
UPS
Basic Ordering Unit (pcs)
IH
Packing Code
Marking
C11
Power Conditioner
RGS30TSX2
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
1200
±30
30
Unit
V
Gate - Emitter Voltage
V
TC = 25°C
A
Collector Current
TC = 100°C
IC
15
A
*1
Pulsed Collector Current
Power Dissipation
45
A
ICP
TC = 25°C
PD
PD
Tj
267
133
W
W
TC = 100°C
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
°C
°C
Tstg
*1 Pulse width limited by Tjmax.
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Datasheet
RGS30TSX2
lThermal Resistance
Values
Typ.
-
Parameter
Thermal Resistance IGBT Junction - Case
Symbol
Rθ(j-c)
Unit
Min.
-
Max.
0.56
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
1200
-
VCE = 1200V, VGE= 0V
ICES Tj = 25℃
Collector Cut - off Current
-
-
-
10
-
μA
Tj = 175℃*2
1
mA
Gate - Emitter Leakage
Current
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 2.3mA
-
-
±500
7.0
nA
V
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 15A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.70
2.20
2.10
-
V
V
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Datasheet
RGS30TSX2
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
1272
66
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V
Coes VGE = 0V
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
7.6
41
VCE = 500V
Qge IC = 15A
Qgc VGE = 15V
td(on)
11
nC
17
30
IC = 15A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
8.5
70
ns
mJ
ns
Turn - off Delay Time
Fall Time
128
0.74
0.6
29
Eon
Eoff
td(on)
tr
Turn-on Switching Loss
Turn-off Switching Loss
Turn - on Delay Time
Rise Time
IC = 15A, VCC = 600V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
10
td(off)
tf
Turn - off Delay Time
Fall Time
69
120
0.81
0.65
Eon
Eoff
Turn-on Switching Loss
Turn-off Switching Loss
mJ
-
IC = 45A, VCC = 1050V
Vp = 1200V, VGE = 15V
RG = 50Ω, Tj = 175°C
Reverse Bias
Safe Operating Area
RBSOA
tsc
FULL SQUARE
V
CC ≤ 600V
VGE = 15V, Tj = 25°C
Short Circuit Withstand Time
Short Circuit Withstand Time
10
8
-
-
-
-
μs
μs
V
CC ≤ 600V
VGE = 15V, Tj = 150°C
*2
tsc
*2 Design assurance without measurement
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Datasheet
RGS30TSX2
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
400
Fig.2 Collector Current
vs. Case Temperature
40
30
20
10
0
300
200
100
0
Tj ≤ 175ºC
VGE ≥ 15V
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
1000
Fig.4 Reverse Bias Safe Operating Area
60
100
45
30
15
10μs
10
100μs
1
0.1
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
0
0.01
0
300 600 900 1200 1500
1
10
100
1000 10000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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Datasheet
RGS30TSX2
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
45
45
Tj = 175ºC
40
Tj = 25ºC
40
VGE = 12V
35
30
25
20
15
10
5
35
VGE = 20V
VGE = 15V
VGE = 20V
30
VGE = 15V
25
20
15
10
5
VGE = 12V
VGE = 10V
VGE = 10V
VGE = 8V
VGE = 8V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector To Emitter Saturation
Fig.7 Typical Transfer Characteristics
45
Voltage vs. Junction Temperature
4
VGE = 15V
IC = 30A
VCE = 10V
40
35
30
25
20
15
10
3
2
1
0
IC = 15A
IC = 7.5A
5
0
Tj = 175ºC
Tj = 25ºC
0
2
4
6
8 10 12 14 16
25 50 75 100 125 150 175
Junction Temperature : Tj [°C ]
Gate To Emitter Voltage : VGE [V]
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Datasheet
RGS30TSX2
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
10
10
Tj = 175ºC
Tj = 25ºC
8
8
IC = 30A
IC = 30A
6
4
2
0
6
IC = 15A
IC = 7.5A
IC = 15A
IC = 7.5A
4
2
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
tf
tf
100
100
10
1
td(off)
td(off)
td(on)
td(on)
10
1
tr
tr
VCC = 600V, IC = 15A,
VGE = 15V, Tj = 175ºC
Inductive load
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0
10
20
30
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : RG [Ω]
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Datasheet
RGS30TSX2
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
vs. Collector Current
10
10
Eon
Eon
1
1
Eoff
Eoff
0.1
0.1
0.01
VCC = 600V, VGE = 15V,
IC = 15A, Tj = 175ºC
Inductive load
VCC = 600V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
0.01
0
10
20
30
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
15
10000
VCC = 300V
1000
100
10
Cies
10
5
VCC = 500V
Coes
f = 1MHz
VGE = 0V
Tj = 25ºC
IC = 15A
Tj = 25ºC
Cres
1
0
0.01
0.1
1
10
100
0
15
30
45
Collector To Emitter Voltage : VCE [V]
Gate Charge : QG [nC]
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Datasheet
RGS30TSX2
lElectrical Characteristic Curves
Fig.17 IGBT Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
0.01
Single Pulse
PDM
0.01
0.02
0.05
t1
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
C1
C2
C3
R1
400.8u 2.510m 12.89m 81.52m 263.0m 215.5m
R2
R3
0.001
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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Datasheet
RGS30TSX2
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
D.U.T.
90%
VGE
VG
10%
Fig.18 Inductive Load Circuit
90%
10%
IC
tf
td(off)
td(on)
tr
ton
toff
VCE
10%
VCE(sat)
Eon
Eoff
Fig.19 Inductive Load Waveform
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Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1107
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