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RGS80TS65HR [ROHM]

RGS80TS65HR是一款具有低导通损耗特性的车载IGBT。 适用于注重导通损耗的电动压缩机的逆变电路和PTC加热器的开关电路。是符合AEC-Q101标准的高可靠性产品。;
RGS80TS65HR
型号： RGS80TS65HR
厂家： ROHM    ROHM
描述：

RGS80TS65HR是一款具有低导通损耗特性的车载IGBT。 适用于注重导通损耗的电动压缩机的逆变电路和PTC加热器的开关电路。是符合AEC-Q101标准的高可靠性产品。

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RGS80TS65HR  
650V 40A Field Stop Trench IGBT  
Datasheet  
Outline  
TO-247N  
VCES  
IC (100°C)  
VCE(sat) (Typ.)  
PD  
650V  
40A  
1.65V  
272W  
(1)(2)(3)  
Inner Circuit  
(2)  
(3)  
Features  
(1) Gate  
(2) Collector  
(3) Emitter  
1) Low Collector - Emitter Saturation Voltage  
2) Short Circuit Withstand Time 8μs  
3) Qualified to AEC-Q101  
(1)  
4) Pb - free Lead Plating ; RoHS Compliant  
Packaging Specifications  
Packaging  
Tube  
Application  
Reel Size (mm)  
-
Heater for Automotive  
Tape Width (mm)  
Type  
-
450  
Basic Ordering Unit (pcs)  
Packing Code  
Marking  
C11  
RGS80TS65  
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)  
Parameter  
Collector - Emitter Voltage  
Symbol  
VCES  
VGES  
IC  
Value  
650  
±30  
73  
Unit  
V
Gate - Emitter Voltage  
V
TC = 25°C  
A
Collector Current  
TC = 100°C  
IC  
40  
A
*1  
Pulsed Collector Current  
Power Dissipation  
120  
272  
136  
A
ICP  
TC = 25°C  
PD  
PD  
Tj  
W
W
TC = 100°C  
Operating Junction Temperature  
Storage Temperature  
-40 to +175  
-55 to +175  
°C  
°C  
Tstg  
*1 Pulse width limited by Tjmax.  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
1/9  
Datasheet  
RGS80TS65HR  
Thermal Resistance  
Values  
Typ.  
-
Parameter  
Thermal Resistance IGBT Junction - Case  
Symbol  
Rθ(j-c)  
Unit  
Min.  
-
Max.  
0.55  
°C/W  
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)  
Values  
Typ.  
Parameter  
Symbol  
Conditions  
Unit  
V
Min.  
650  
Max.  
-
Collector - Emitter Breakdown  
Voltage  
BVCES IC = 10μA, VGE = 0V  
-
VCE = 650V, VGE = 0V,  
ICES Tj = 25℃  
Collector Cut - off Current  
-
-
-
-
10  
5
μA  
Tj = 175℃*2  
mA  
Gate - Emitter Leakage  
Current  
IGES  
VGE = ±30V, VCE = 0V  
-
-
±200  
7.0  
nA  
V
Gate - Emitter Threshold  
Voltage  
VGE(th) VCE = 5V, IC = 2.0mA  
5.0  
6.0  
IC = 40A, VGE = 15V,  
VCE(sat) Tj = 25°C  
Tj = 175°C  
Collector - Emitter Saturation  
Voltage  
-
-
1.65  
2.15  
2.10  
-
V
V
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
2/9  
Datasheet  
RGS80TS65HR  
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)  
Values  
Typ.  
1240  
103  
16  
Parameter  
Symbol  
Conditions  
Unit  
pF  
Min.  
Max.  
Cies VCE = 30V,  
Coes VGE = 0V,  
Input Capacitance  
Output Capacitance  
Reverse transfer Capacitance  
Total Gate Charge  
Gate - Emitter Charge  
Gate - Collector Charge  
Turn - on Delay Time  
Rise Time  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres  
Qg  
f = 1MHz  
VCE = 300V,  
48  
Qge IC = 40A,  
Qgc VGE = 15V  
td(on)  
12  
nC  
19  
37  
IC = 40A, VCC = 400V,  
VGE = 15V, RG = 10Ω,  
Tj = 25°C  
Inductive Load  
*Eon include diode  
reverse recovery  
tr  
td(off)  
tf  
17  
ns  
mJ  
ns  
Turn - off Delay Time  
Fall Time  
112  
96  
Eon  
Eoff  
td(on)  
tr  
Turn - on Switching Loss  
Turn - off Switching Loss  
Turn - on Delay Time  
Rise Time  
1.05  
1.03  
34  
IC = 40A, VCC = 400V,  
VGE = 15V, RG = 10Ω,  
Tj = 175°C  
Inductive Load  
*Eon include diode  
reverse recovery  
28  
td(off)  
tf  
Turn - off Delay Time  
Fall Time  
141  
150  
1.43  
1.47  
Eon  
Eoff  
Turn - on Switching Loss  
Turn - off Switching Loss  
mJ  
-
IC = 120A, VCC = 520V,  
VP = 650V, VGE = 15V,  
RG = 50Ω, Tj = 175°C  
Reverse Bias  
Safe Operating Area  
RBSOA  
tsc  
FULL SQUARE  
V
CC ≤ 360V,  
VGE = 15V, Tj = 25°C  
Short Circuit Withstand Time  
Short Circuit Withstand Time  
8
6
-
-
-
-
μs  
μs  
V
CC ≤ 360V,  
VGE = 15V, Tj = 150°C  
*2  
tsc  
*2 Design assurance without measurement  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
3/9  
Datasheet  
RGS80TS65HR  
Electrical Characteristic Curves  
Fig.1 Power Dissipation  
vs. Case Temperature  
300  
Fig.2 Collector Current  
vs. Case Temperature  
80  
60  
40  
20  
0
250  
200  
150  
100  
50  
Tj ≤ 175ºC  
VGE ≥ 15V  
0
0
25 50 75 100 125 150 175  
Case Temperature : TC [°C ]  
0
25 50 75 100 125 150 175  
Case Temperature : TC [°C ]  
Fig.3 Forward Bias Safe Operating Area  
1000  
Fig.4 Reverse Bias Safe Operating Area  
140  
10μs  
120  
100  
80  
100  
10  
1
100μs  
60  
40  
0.1  
0.01  
20  
0
Tj ≤ 175ºC  
VGE = 15V  
TC = 25ºC  
Single Pulse  
0
200  
400  
600  
800  
1
10  
100  
1000  
Collector To Emitter Voltage : VCE [V]  
Collector To Emitter Voltage : VCE [V]  
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© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
4/9  
Datasheet  
RGS80TS65HR  
Electrical Characteristic Curves  
Fig.5 Typical Output Characteristics  
120  
Fig.6 Typical Output Characteristics  
120  
VGE = 15V  
Tｊ = 25ºC  
Tｊ = 175ºC  
VGE = 20V  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
VGE = 20V  
VGE = 15V  
VGE = 12V  
VGE = 10V  
VGE = 12V  
VGE = 10V  
VGE = 8V  
VGE = 8V  
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]  
Collector To Emitter Voltage : VCE [V]  
Fig.8 Typical Collector To Emitter Saturation  
Fig.7 Typical Transfer Characteristics  
Voltage vs. Junction Temperature  
4
60  
IC = 80A  
VGE = 15V  
VCE = 10V  
50  
40  
30  
3
2
1
0
IC = 40A  
IC = 20A  
20  
Tj = 175ºC  
10  
0
Tj = 25ºC  
0
2
4
6
8
10 12 14  
25 50 75 100 125 150 175  
Junction Temperature : Tj [°C ]  
Gate To Emitter Voltage : VGE [V]  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
5/9  
Datasheet  
RGS80TS65HR  
Electrical Characteristic Curves  
Fig.9 Typical Collector To Emitter Saturation  
Voltage vs. Gate To Emitter Voltage  
Fig.10 Typical Collector To Emitter Saturation  
Voltage vs. Gate To Emitter Voltage  
20  
20  
Tj = 175ºC  
Tj = 25ºC  
15  
15  
10  
5
IC = 80A  
IC = 80A  
IC = 40A  
IC = 20A  
IC = 40A  
10  
IC = 20A  
5
0
0
5
10  
15  
20  
5
10  
15  
20  
Gate To Emitter Voltage : VGE [V]  
Gate To Emitter Voltage : VGE [V]  
Fig.11 Typical Switching Time  
vs. Collector Current  
Fig.12 Typical Switching Time  
vs. Gate Resistance  
1000  
1000  
tf  
tf  
100  
100  
10  
1
td(off)  
td(off)  
td(on)  
td(on)  
tr  
tr  
10  
VCC = 400V, IC = 40A,  
VGE = 15V, Tj = 175ºC  
Inductive load  
VCC = 400V, VGE = 15V,  
RG = 10Ω, Tj = 175ºC  
Inductive load  
1
0 10 20 30 40 50 60 70 80  
Collecter Current : IC [A]  
0
10  
20  
30  
40  
50  
Gate Resistance : RG [Ω]  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
6/9  
Datasheet  
RGS80TS65HR  
Electrical Characteristic Curves  
Fig.13 Typical Switching Energy Losses  
Fig.14 Typical Switching Energy Losses  
vs. Gate Resistance  
vs. Collector Current  
10  
10  
Eon  
Eoff  
1
1
Eoff  
Eon  
0.1  
0.1  
0.01  
VCC = 400V, IC = 40A,  
VGE = 15V, Tj = 175ºC  
Inductive load  
VCC = 400V, VGE = 15V,  
RG = 10Ω, Tj = 175ºC  
Inductive load  
0.01  
0 10 20 30 40 50 60 70 80  
0
10  
20  
30  
40  
50  
Collector Current : IC [A]  
Gate Resistance : RG [Ω]  
Fig.15 Typical Capacitance  
vs. Collector To Emitter Voltage  
10000  
Fig.16 Typical Gate Charge  
15  
VCE = 200V  
Cies  
VCE = 300V  
1000  
10  
VCE = 400V  
Coes  
100  
5
0
10  
Cres  
f = 1MHz  
VGE = 0V  
Tj = 25ºC  
IC = 40A  
Tj = 25ºC  
1
0.01  
0.1  
1
10  
100  
0
10  
20  
30  
40  
50  
Collector To Emitter Voltage : VCE [V]  
Gate Charge : Qg [nQ]  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
7/9  
Datasheet  
RGS80TS65HR  
Electrical Characteristic Curves  
Fig.17 IGBT Transient Thermal Impedance  
10  
1
0.1  
D = 0.5  
0.2  
0.1  
PDM  
t1  
Single Pulse  
t2  
Duty = t1/t2  
Peak Tj = PDM×Zθ(j-c)+TC  
0.01  
0.02  
C1 R1  
3.282m 29.92m 78.57m 402.0m 134.1m 13.88m  
C2  
C3  
R2  
R3  
0.05  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width : t1 [s]  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
8/9  
Datasheet  
RGS80TS65HR  
●Inductive Load Switching Circuit and Waveform  
Gate Drive Time  
90%  
D.U.T.  
10%  
VGE  
VG  
90%  
10%  
Fig.18 Inductive Load Circuit  
tf  
IC  
td(off)  
td(on)  
tr  
ton  
toff  
VCE  
10%  
VCE(sat)  
Eon  
Eoff  
Fig.19 Inductive Load Waveform  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
2019.02 - Rev.A  
9/9  
Notice  
N o t e s  
1) The information contained herein is subject to change without notice.  
2) Before you use our Products, please contact our sales representative and verify the latest specifica-  
tions :  
3) Although ROHM is continuously working to improve product reliability and quality, semicon-  
ductors can break down and malfunction due to various factors.  
Therefore, in order to prevent personal injury or fire arising from failure, please take safety  
measures such as complying with the derating characteristics, implementing redundant and  
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no  
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by  
ROHM.  
4) Examples of application circuits, circuit constants and any other information contained herein are  
provided only to illustrate the standard usage and operations of the Products. The peripheral  
conditions must be taken into account when designing circuits for mass production.  
5) The technical information specified herein is intended only to show the typical functions of and  
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,  
any license to use or exercise intellectual property or other rights held by ROHM or any other  
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of  
such technical information.  
6) The Products specified in this document are not designed to be radiation tolerant.  
7) For use of our Products in applications requiring a high degree of reliability (as exemplified  
below), please contact and consult with a ROHM representative : transportation equipment (i.e.  
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety  
equipment, medical systems, and power transmission systems.  
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace  
equipment, nuclear power control systems, and submarine repeaters.  
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with  
the recommended usage conditions and specifications contained herein.  
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this  
document. However, ROHM does not warrants that such information is error-free, and ROHM  
shall have no responsibility for any damages arising from any inaccuracy or misprint of such  
information.  
11) Please use the Products in accordance with any applicable environmental laws and regulations,  
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a  
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting  
non-compliance with any applicable laws or regulations.  
12) When providing our Products and technologies contained in this document to other countries,  
you must abide by the procedures and provisions stipulated in all applicable export laws and  
regulations, including without limitation the US Export Administration Regulations and the Foreign  
Exchange and Foreign Trade Act.  
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of  
ROHM.  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2015 ROHM Co., Ltd. All rights reserved.  
R1102  
S

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