RGSX5TS65DHR [ROHM]

RGSX5TS65DHR是短路耐受时间为8µs、非常适用于车载和工业设备中的通用逆变器的产品。符合AEC-Q101标准。;


型号：	RGSX5TS65DHR
厂家：	ROHM
描述：	RGSX5TS65DHR是短路耐受时间为8µs、非常适用于车载和工业设备中的通用逆变器的产品。符合AEC-Q101标准。
文件：	总13页 (文件大小：5282K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RGSX5TS65DHR

650V 75A Field Stop Trench IGBT

Datasheet

lOutline

TO-247N

V_CES

I_{C (100°C)}

V_{CE(sat) (Typ.)}

P_D

650V

75A

1.7V

404W

(1)(2)(3)

lInner Circuit

(2)

lFeatures

1) Low Collector - Emitter Saturation Voltage

2) Short Circuit Withstand Time 8μs

3) Qualified to AEC-Q101

(1) Gate

(2) Collector

(3) Emitter

(1)

*1 Built in FRD

(3)

4) Built in Very Fast & Soft Recovery FRD

5) Pb - free Lead Plating ; RoHS Compliant

lPackaging Specifications

Packaging

Tube

Reel Size (mm)

lApplication

Tape Width (mm)

Type

450

General Inverter

Basic Ordering Unit (pcs)

for Automotive and Industrial Use

Packing Code

Marking

C11

RGSX5TS65D

lAbsolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

650

±30

114

Unit

Gate - Emitter Voltage

T_C= 25°C

Collector Current

T_C= 100°C

I_C

Pulsed Collector Current

Diode Forward Current

Diode Pulsed Forward Current

Power Dissipation

225

I_CP

T_C= 25°C

I_F

T_C= 100°C

225

404

202

I_FP

T_C= 25°C

P_D

T_j

T_C= 100°C

Operating Junction Temperature

Storage Temperature

-40 to +175

-55 to +175

°C

T_stg

*1 Pulse width limited by T_jmax.

www.rohm.com

2021.01 - Rev.A

1/11

Datasheet

RGSX5TS65DHR

lThermal Resistance

Values

Parameter

Symbol

Unit

Min.

Typ.

Max.

0.37

0.80

R_θ(j-c)

Thermal Resistance IGBT Junction - Case

Thermal Resistance Diode Junction - Case

C/W

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

650

Max.

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

V_CE= 650V, V_GE= 0V

I_CEST_j= 25℃

Collector Cut - off Current

μA

T_j= 175℃^*2

Gate - Emitter Leakage

Current

I_GESV_GE= ±30V, V_CE= 0V

V_GE(th)V_CE= 5V, I_C= 3.5mA

±200

7.0

Gate - Emitter Threshold

Voltage

5.0

6.0

I_C= 75A, V_GE= 15V

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

1.70

2.20

2.15

www.rohm.com

2021.01 - Rev.A

2/11

Datasheet

RGSX5TS65DHR

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

2320

168

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_iesV_CE= 30V

C_oesV_GE= 0V

Input Capacitance

Output Capacitance

Reverse transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

C_res

Q_g

f = 1MHz

V_CE= 300V

Q_geI_C= 75A

Q_gcV_GE= 15V

t_d(on)

I_C= 75A, V_CC= 400V,

V_GE= 15V, R_G= 10Ω,

T_j= 25°C

Inductive Load

*E_oninclude diode

reverse recovery

t_r

t_d(off)

t_f

Turn - off Delay Time

Fall Time

113

E_on

E_off

t_d(on)

t_r

Turn-on Switching Loss

Turn-off Switching Loss

Turn - on Delay Time

Rise Time

3.32

1.90

I_C= 75A, V_CC= 400V,

V_GE= 15V, R_G= 10Ω,

T_j= 175°C

Inductive Load

*E_oninclude diode

reverse recovery

t_d(off)

t_f

Turn - off Delay Time

Fall Time

135

137

3.58

2.58

E_on

E_off

Turn-on Switching Loss

Turn-off Switching Loss

I_C= 225A, V_CC= 520V

V_p= 650V, V_GE= 15V

R_G= 50Ω, T_j= 175°C

Reverse Bias

Safe Operating Area

RBSOA

t_sc

FULL SQUARE

_CC≤ 360V

V_GE= 15V, T_j= 25°C

Short Circuit Withstand Time

μs

_CC≤ 360V

V_GE= 15V, T_j= 150°C

t_sc

*2 Design assurance without measurement

www.rohm.com

2021.01 - Rev.A

3/11

Datasheet

RGSX5TS65DHR

lFRD Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

I_F= 50A

Unit

Min.

Max.

V_F

T_j= 25°C

Diode Forward Voltage

1.45

1.55

1.90

T_j= 175°C

Diode Reverse Recovery

Time

t_rr

114

8.5

Diode Peak Reverse

Recovery Current

I_F= 50A,

I_rr

V_CC= 400V,

di_F/dt = 200A/μs,

T_j= 25°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

t_rr

0.57

μC

μJ

Diode Reverse Recovery

Energy

Diode Reverse Recovery

Time

291

Diode Peak Reverse

Recovery Current

I_F= 50A,

I_rr

V_CC= 400V,

di_F/dt = 200A/μs,

T_j= 175°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

1.93

158

μC

μJ

Diode Reverse Recovery

Energy

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2021.01 - Rev.A

4/11

Datasheet

RGSX5TS65DHR

lElectrical Characteristic Curves

Fig.1 Power Dissipation

vs. Case Temperature

500

Fig.2 Collector Current

vs. Case Temperature

150

125

100

400

300

200

100

T_j≤ 175ºC

V_GE≥ 15V

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area

300

1000

10μs

250

200

150

100

100μs

0.1

T_j≤ 175ºC

V_GE= 15V

T_C= 25ºC

Single Pulse

0.01

200

400

600

800

100

1000

Collector To Emitter Voltage : V_CE[V]

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2021.01 - Rev.A

5/11

Datasheet

RGSX5TS65DHR

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

225

T_ｊ= 25ºC

200

T_ｊ= 175ºC

200

V_GE= 20V

V_GE= 12V

175

150

125

100

175

V_GE= 20V

V_GE= 15V

150

V_GE= 15V

125

V_GE= 12V

100

V_GE= 10V

V_GE= 8V

Collector To Emitter Voltage : V_CE[V]

Fig.8 Typical Collector to Emitter Saturation

Voltage vs. Junction Temperature

Fig.7 Typical Transfer Characteristics

V_GE= 15V

V_CE= 10V

I_C= 150A

I_C= 75A

I_C= 37.5A

T_j= 175ºC

T_j= 25ºC

10 12

25 50 75 100 125 150 175

Gate To Emitter Voltage : V_GE[V]

Junction Temperature : T_j[°C ]

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2021.01 - Rev.A

6/11

Datasheet

RGSX5TS65DHR

lElectrical Characteristic Curves

Fig.9 Typical Collector to Emitter Saturation

Voltage vs. Gate to Emitter Voltage

Fig.10 Typical Collector to Emitter Saturation

Voltage vs. Gate to Emitter Voltage

T_j= 175ºC

T_j= 25ºC

I_C= 150A

I_C= 75A

I_C= 37.5A

Gate To Emitter Voltage : V_GE[V]

Fig.11 Typical Switching Time

vs. Collector Current

Fig.12 Typical Switching Time

vs. Gate Resistance

1000

t_d(off)

t_f

100

t_f

t_d(on)

100

t_d(off)

ｔ_d(on)

t_r

V_CC= 400V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

t_r

I_C= 75A, T_j= 175ºC

Inductive load

25 50 75 100 125 150

Collecter Current : I_C[A]

Gate Resistance : R_G[Ω]

www.rohm.com

2021.01 - Rev.A

7/11

Datasheet

RGSX5TS65DHR

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

Fig.14 Typical Switching Energy Losses

vs. Gate Resistance

vs. Collector Current

100

E_on

E_off

V_CC= 400V, V_GE= 15V,

I_C= 75A, T_j= 175ºC

Inductive load

V_CC= 400V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

0.1

25 50 75 100 125 150

Collector Current : I_C[A]

Gate Resistance : R_G[Ω]

Fig.15 Typical Capacitance vs. Collector

Emitter to Voltage

Fig.16 Typical Gate Charge

10000

V_CC= 300V

V_CC= 200V

C_ies

1000

100

C_oes

V_CC= 400V

C_res

f = 1MHz

V_GE= 0V

T_j= 25ºC

I_C= 75A

T_j= 25ºC

0.01

0.1

100

15 30 45 60 75 90

Gate Charge : Q_G[nQ]

Collector To Emitter Voltage : V_CE[V]

www.rohm.com

2021.01 - Rev.A

8/11

Datasheet

RGSX5TS65DHR

lElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current

Fig.18 Typical Diode Reverce Recovery Time

vs. Forward Voltage

225

vs. Forward Current

400

200

175

150

125

100

300

T_j= 175ºC

200

100

T_j= 25ºC

V_CC= 400V

di_F/dt = 200A/μs

Inductive load

T_j= 175ºC

T_j= 25ºC

0.5

1.5

2.5

100

Forward Voltage : V_F[V]

Forward Current : I_F[A]

Fig.19 Typical Diode Reverse Recovery

Current vs. Forward Current

Fig.20 Typical Diode Reverse Recovery

Energy Losses vs. Forward Current

V_CC= 400V

T_j= 175℃

Inductive load

1.5

R_G= 10Ω

R_G= 20Ω

T_j= 175ºC

R_G= 50Ω

0.5

V_CC= 400V

di_F/dt = 200A/μs

Inductive load

T_j= 25ºC

100

Forward Current : I_F[A]

www.rohm.com

2021.01 - Rev.A

9/11

Datasheet

RGSX5TS65DHR

lElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance

D = 0.5

0.2

0.1

P_DM

Single Pulse

t₁

0.01

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

0.01

0.02

666.5u 2.774m 16.73m 64.72m 168.9m 136.4m

0.05

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t₁[s]

Fig.22 Diode Transient Thermal Impedance

D = 0.5

0.2

0.1

P_DM

Single Pulse

t₁

0.01

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

0.02

0.05

302.1u

396.3u 2.865m 102.7m 197.9m 499.4m

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t₁[s]

www.rohm.com

2021.01 - Rev.A

10/11

Datasheet

RGSX5TS65DHR

●Inductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

V_GE

10%

V_G

90%

10%

I_C

t_d(on)

Fig.23 Inductive Load Circuit

t_f

t_d(off)

t_r

t_{rr ,}Q_rr

t_on

t_off

I_F

di_F/dt

V_CE

10%

I_rr

V_CE(sat)

E_on

E_off

Fig.24 Diode Reverce Recovery Waveform

Fig.25 Inductive Load Waveform

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2021.01 - Rev.A

11/11

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

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R1107

Daattaasshheeeett

General Precaution

1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.

ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s

representative.

3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001

RGSX5TS65DHR [ROHM]

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