RGT00TS65D [ROHM]
罗姆的IGBT(绝缘栅极型双极晶体管)产品为高电压、大电流应用的高效化和节能化作贡献。;型号: | RGT00TS65D |
厂家: | ROHM |
描述: | 罗姆的IGBT(绝缘栅极型双极晶体管)产品为高电压、大电流应用的高效化和节能化作贡献。 栅 双极性晶体管 栅极 |
文件: | 总13页 (文件大小:4694K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGT00TS65DGC13
Datasheet
650V 50A Field Stop Trench IGBT
lOutline
TO-247GE
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.65V
277W
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1
3) Short Circuit Withstand Time 5μs
(1)
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lPackaging Specifications
Packaging
Tube
lApplications
General Inverter
Reel Size (mm)
-
-
UPS
Tape Width (mm)
Type
Power Conditioner
Welder
Basic Ordering Unit (pcs)
600
C13
Packing code
RGT00TS65D
Marking
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
V
30
TC = 25°C
85
A
Collector Current
TC = 100°C
IC
50
150
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
A
ICP
TC = 25°C
IF
IF
50
A
TC = 100°C
30
A
*1
150
A
IFP
TC = 25°C
PD
PD
Tj
277
W
W
°C
°C
TC = 100°C
138
Operating Junction Temperature
-40 to +175
-55 to +175
Tstg
Storage Temperature
*1 Pulse width limited by Tjmax.
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
1/11
Datasheet
RGT00TS65DGC13
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.54
1.42
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
°C/W
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
-
ICES
VCE = 650V, VGE = 0V
Collector Cut - off Current
-
-
10
200
7.0
μA
nA
V
IGES
VGE = 30V, VCE = 0V
Gate - Emitter Leakage Current
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 34.7mA
5.0
6.0
IC = 50A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.65
2.2
2.1
-
V
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
2/11
Datasheet
RGT00TS65DGC13
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
2770
106
43
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies
Coes
Cres
Qg
VCE = 30V
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
f = 1MHz
VCE = 300V
94
Qge
Qgc
td(on)
tr
IC = 50A
22
nC
ns
VGE = 15V
31
IC = 50A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 25°C
42
68
td(off)
tf
td(on)
tr
td(off)
tf
Turn - off Delay Time
Fall Time
137
62
Inductive Load
IC = 50A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 175°C
Turn - on Delay Time
Rise Time
42
68
ns
Turn - off Delay Time
Fall Time
149
76
Inductive Load
IC = 150A, VCC = 520V
VP = 650V, VGE = 15V
RG = 50Ω, Tj = 175°C
Reverse Bias Safe Operating Area
Short Circuit Withstand Time
RBSOA
FULL SQUARE
-
V
CC ≦ 360V
tsc
VGE = 15V
Tj = 25°C
5
-
-
μs
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
3/11
Datasheet
RGT00TS65DGC13
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
IF = 30A
VF
Tj = 25°C
Diode Forward Voltage
Diode Reverse Recovery Time
-
-
1.45
1.25
2.0
-
Tj = 175°C
trr
-
-
-
-
-
-
54
-
-
-
-
-
-
ns
A
IF = 30A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
Diode Peak Reverse Recovery
Current
Irr
7.4
Diode Reverse Recovery
Charge
Qrr
0.22
225
12.8
1.60
μC
ns
A
trr
Diode Reverse Recovery Time
IF = 30A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
μC
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
4/11
Datasheet
RGT00TS65DGC13
lElectrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
300
280
260
240
220
200
180
160
140
120
100
80
90
80
70
60
50
40
30
20
60
40
20
0
ꢀ
Tj≦175ºC
GE≧15V
10
0
V
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
180
1000
10µs
160
140
120
100
80
100
10
100µs
1
60
40
0.1
0.01
TC= 25ºC
Single Pulse
Tj≦175ºC
VGE=15V
20
0
1
10
100
1000
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
5/11
Datasheet
RGT00TS65DGC13
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
150
150
Tj= 25ºC
Tj= 175ºC
VGE= 20V
VGE= 15V
VGE= 12V
135
135
120
105
90
75
60
45
30
15
0
VGE= 20V
120
VGE= 12V
105
90
75
60
45
30
15
0
VGE= 15V
VGE= 10V
VGE= 10V
VGE= 8V
VGE= 8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
60
4
VCE= 10V
VGE= 15V
IC= 100A
50
40
30
20
10
0
3
IC= 50A
2
IC= 25A
Tj= 175ºC
1
Tj= 25ºC
10
0
0
2
4
6
8
12
25
50
75
100
125
150
175
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
6/11
Datasheet
RGT00TS65DGC13
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
vs. Gate To Emitter Voltage
20
20
Tj= 175ºC
Tj= 25ºC
IC= 100A
15
15
IC= 100A
IC= 50A
10
10
IC= 50A
IC= 25A
IC= 25A
5
5
0
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
tf
td(off)
tf
td(off)
100
100
tr
td(on)
td(on)
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive load
tr
10
10
0
10 20 30 40 50 60 70 80 90 100
Collector Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
7/11
Datasheet
RGT00TS65DGC13
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Collector Current
vs. Gate Resistance
10
10
Eoff
1
1
Eoff
Eon
Eon
0.1
0.01
0.1
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
Inductive load
0.01
0
10
20
30
40
50
0
10 20 30 40 50 60 70 80 90 100
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
10000
1000
100
10
15
Cies
10
5
Coes
Cres
f=1MHz
VGE=0V
Tj=25ºC
VCC=300V
IC=50A
Tj=25ºC
1
0
0.01
0.1
1
10
100
0
10 20 30 40 50 60 70 80 90 100
Gate Charge : Qg [nC]
Collector To Emitter Voltage : VCE[V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
8/11
Datasheet
RGT00TS65DGC13
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
vs. Forward Voltage
150
400
VCC=400V
diF/dt=200A/µs
Inductive load
135
120
105
90
300
200
100
0
Tj= 175ºC
75
60
45
Tj= 175ºC
30
Tj= 25ºC
Tj= 25ºC
15
0
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
Forward Voltage : VF[V]
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery Current
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
2.5
vs. Forward Current
20
VCC=400V
diF/dt=200A/µs
Inductive load
2
15
Tj= 175ºC
1.5
Tj= 175ºC
10
1
5
0.5
VCC=400V
diF/dt=200A/µs
Inductive load
Tj= 25ºC
10
Tj= 25ºC
0
0
0
20
30
40
50
0
10
20
30
40
50
Forward Current : IF [A]
Forward Current : IF [A]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
9/11
Datasheet
RGT00TS65DGC13
lElectrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
10
1
D= 0.5
0.2
0.1
PDM
0.1
0.01
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
Single Pulse
0.01
0.02
0.05
0.0001
0.001
0.01
0.1
1
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
10
1
D= 0.5
0.2
0.1
PDM
0.1
Single Pulse
t1
t2
0.01
0.02
0.05
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
0.01
0.0001
0.001
0.01
Pulse Width : t1[s]
0.1
1
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
10/11
Datasheet
RGT00TS65DGC13
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
10%
IC
td(on)
Fig.23 Inductive Load Circuit
td(off)
tf
tr
ton
toff
trr , Qrr
IF
VCE
diF/dt
VCE(sat)
Irr
Fig.24 Inductive Load Waveform
Fig.25 Diode Reverce Recovery Waveform
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.02 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
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R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
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