RGT20TM65D [ROHM]

RGT20TM65D是一款低VCE(sat)的场截止沟槽型IGBT。适用于逆变器、UPS、功率调节器、焊接等用途。;


型号：	RGT20TM65D
厂家：	ROHM
描述：	RGT20TM65D是一款低VCE(sat)的场截止沟槽型IGBT。适用于逆变器、UPS、功率调节器、焊接等用途。双极性晶体管调节器
文件：	总12页 (文件大小：1237K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RGT20TM65D

650V 10A Field Stop Trench IGBT

Datasheet

lOutline

TO-220NFM

V_CES

I_{C (100°C)}

V_{CE(sat) (Typ.)}

P_D

650V

1.65V

25W

(1)(2)(3)

lInner Circuit

lFeatures

(2)

(3)

1) Low Collector - Emitter Saturation Voltage

2) Low Switching Loss

(1) Gate

(2) Collector

(3) Emitter

(1)

3) Short Circuit Withstand Time 5μs

*1 Built in FRD

4) Built in Very Fast & Soft Recovery FRD

(RFN - Series)

lPackaging Specifications

5) Pb - free Lead Plating ; RoHS Compliant

Packaging

Tube

lApplication

Reel Size (mm)

General Inverter

Tape Width (mm)

Type

1,000

UPS

Basic Ordering Unit (pcs)

Power Conditioner

Welder

Packing Code

Marking

RGT20TM65D

lAbsolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

Unit

650

Gate - Emitter Voltage

±30

T_C= 25°C

Collector Current

T_C= 100°C

I_C

Pulsed Collector Current

Diode Forward Current

Diode Pulsed Forward Current

Power Dissipation

I_CP

T_C= 25°C

I_F

T_C= 100°C

I_FP

T_C= 25°C

P_D

T_j

°C

T_C= 100°C

Operating Junction Temperature

Storage Temperature

-40 to +175

-55 to +175

T_stg

*1 Pulse width limited by T_jmax.

www.rohm.com

2019.06 - Rev.B

1/11

Datasheet

RGT20TM65D

lThermal Resistance

Values

Parameter

Symbol

Unit

Min.

Typ.

Max.

5.84

6.70

R_θ(j-c)

Thermal Resistance IGBT Junction - Case

Thermal Resistance Diode Junction - Case

C/W

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

650

Max.

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

I_CESV_CE= 650V, V_GE= 0V

I_GESV_GE= ±30V, V_CE= 0V

V_GE(th)V_CE= 5V, I_C= 6.7mA

Collector Cut - off Current

±200

7.0

μA

Gate - Emitter Leakage

Current

Gate - Emitter Threshold

Voltage

5.0

6.0

I_C= 10A, V_GE= 15V,

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

1.65

2.15

2.1

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2019.06 - Rev.B

2/11

Datasheet

RGT20TM65D

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

610

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_iesV_CE= 30V,

C_oesV_GE= 0V,

Input Capacitance

Output Capacitance

Reverse transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

C_res

Q_g

f = 1MHz

V_CE= 300V,

Q_geI_C= 10A,

Q_gcV_GE= 15V

t_d(on)

I_C= 10A, V_CC= 400V,

V_GE= 15V, R_G= 10Ω,

T_j= 25°C

t_r

t_d(off)

t_f

Turn - off Delay Time

Fall Time

Inductive Load

104

t_d(on)

t_r

t_d(off)

t_f

Turn - on Delay Time

Rise Time

I_C= 10A, V_CC= 400V,

V_GE= 15V, R_G= 10Ω,

T_j= 175°C

Turn - off Delay Time

Fall Time

Inductive Load

140

I_C= 30A, V_CC= 520V,

V_P= 650V, V_GE= 15V,

R_G= 50Ω, T_j= 175^oC

Reverse Bias Safe Operating

Area

RBSOA

FULL SQUARE

V_CC≤ 360V,

t_sc

V_GE= 15V,

T_j= 25^oC

Short Circuit Withstand Time

μs

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2019.06 - Rev.B

3/11

Datasheet

RGT20TM65D

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

I_F= 8A,

Unit

Min.

Max.

V_F

T_j= 25°C

Diode Forward Voltage

1.4

1.2

1.9

T_j= 175°C

Diode Reverse Recovery

Time

t_rr

5.2

I_F= 8A,

V_CC= 400V,

di_F/dt = 200A/μs,

T_j= 25°C

Diode Peak Reverse

Recovery Current

I_rr

Diode Reverse Recovery

Charge

Q_rr

t_rr

0.12

116

8.1

μC

Diode Reverse Recovery

Time

I_F= 8A,

V_CC= 400V,

di_F/dt = 200A/μs,

T_j= 175°C

Diode Peak Reverse

Recovery Current

I_rr

Diode Reverse Recovery

Charge

Q_rr

0.51

μC

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2019.06 - Rev.B

4/11

Datasheet

RGT20TM65D

lElectrical Characteristic Curves

Fig.1 Power Dissipation

vs. Case Temperature

Fig.2 Collector Current

vs. Case Temperature

T_j≤ 175ºC,

V_GE≥ 15V

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

Fig.3 Forward Bias Safe Operating Area

1000

Fig.4 Reverse Bias Safe Operating Area

100

10μs

100μs

0.1

T_j≤ 175ºC,

V_GE= 15V

T_C= 25ºC

Single Pulse

0.01

200

400

600

800

100

1000

Collector To Emitter Voltage : V_CE[V]

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2019.06 - Rev.B

5/11

Datasheet

RGT20TM65D

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

T_ｊ= 25ºC

T_j= 175ºC

V_GE= 12V

V_GE= 20V

V_GE= 15V

V_GE= 20V

V_GE= 15V

V_GE= 12V

V_GE= 10V

V_GE= 8V

Collector To Emitter Voltage : V_CE[V]

Fig.8 Typical Collector To Emitter Saturation

Voltage vs. Junction Temperature

Fig.7 Typical Transfer Characteristics

V_GE= 15V

V_CE= 10V

I_C= 20A

I_C= 10A

I_C= 5A

T_j= 175ºC

T_j= 25ºC

25 50 75 100 125 150 175

10 12

Gate To Emitter Voltage : V_GE[V]

Junction Temperature : T_j[°C ]

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2019.06 - Rev.B

6/11

Datasheet

RGT20TM65D

lElectrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation

Voltage vs. Gate To Emitter Voltage

Fig.10 Typical Collector To Emitter Saturation

Voltage vs. Gate To Emitter Voltage

T_j= 175ºC

T_j= 25ºC

I_C= 20A

I_C= 10A

I_C= 5A

Gate To Emitter Voltage : V_GE[V]

Fig.11 Typical Switching Time

vs. Collector Current

Fig.12 Typical Switching Time

vs. Gate Resistance

1000

t_f

100

t_d(off)

t_r

t_d(on)

V_CC= 400V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

V_CC= 400V, I_C= 10A,

V_GE= 15V, T_j= 175ºC

Inductive load

Collecter Current : I_C[A]

Gate Resistance : R_G[Ω]

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2019.06 - Rev.B

7/11

Datasheet

RGT20TM65D

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

vs. Collector Current

Fig.14 Typical Switching Energy Losses

vs. Gate Resistance

E_off

E_on

E_off

0.1

0.01

V_CC= 400V, I_C= 10A,

V_GE= 15V, T_j= 175ºC

Inductive load

E_on

V_CC= 400V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

0.01

Collecter Current : I_C[A]

Gate Resistance : R_G[Ω]

Fig.15 Typical Capacitance

vs. Collector To Emitter Voltage

Fig.16 Typical Gate Charge

10000

1000

100

C_ies

C_oes

C_res

f = 1MHz,

V_GE= 0V,

T_j= 25ºC

V_CE= 300V,

I_C= 10A,

T_j= 25ºC

0.01

0.1

100

Collector To Emitter Voltage : V_CE[V]

Gate Charge : Q_g[nC]

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2019.06 - Rev.B

8/11

Datasheet

RGT20TM65D

lElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current

vs. Forward Voltage

Fig.18 Typical Diode Revese Recovery Time

vs. Forward Current

200

V_CC= 400V,

di_F/dt = 200A/μs

Inductive load

150

T_j= 175ºC

100

T_j= 175ºC

T_j= 25ºC

Forward Voltage : V_F[V]

Forward Current : I_F[A]

Fig.19 Typical Diode Reverse Recovery

Current vs. Forward Current

Fig.20 Typical Diode Rrverse Recovery

Charge vs. Forward Current

V_CC= 400V,

di_F/dt = 200A/μs

Inductive load

T_j= 175ºC

0.8

0.6

T_j= 25ºC

T_j= 175ºC

0.4

0.2

V_CC= 400V,

di_F/dt = 200A/μs

Inductive load

T_j= 25ºC

Forward Current : I_F[A]

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2019.06 - Rev.B

9/11

Datasheet

RGT20TM65D

lElectrical Characteristic Curves

Fig.21 IGBT Transient Thermal Impedance

0.1

D = 0.5

0.2

0.1

Single Pulse

P_DM

0.01

0.02

0.05

t₁

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

0.01

0.0001

0.001

0.01

0.1

100

Pulse Width : t₁[s]

Fig.22 Diode Transient Thermal Impedance

0.1 0.2 D = 0.5

Single Pulse

0.01

0.02

P_DM

0.1

0.05

t₁

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

0.01

0.0001

0.001

0.01

0.1

100

Pulse Width : t₁[s]

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2019.06 - Rev.B

10/11

Datasheet

RGT20TM65D

lInductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

10%

V_GE

V_G

90%

10%

Fig.23 Inductive Load Circuit

t_f

I_C

t_d(off)

t_d(on)

t_r

t_{rr ,}Q_rr

t_on

t_off

I_F

V_CE

di_F/dt

I_rr

V_CE(sat)

Fig.25 Diode Reverse Recovery Waveform

Fig.24 Inductive Load Waveform

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2019.06 - Rev.B

11/11

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-

cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in

this document.

7) The Products specified in this document are not designed to be radiation tolerant.

8) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

9) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

11) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

12) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

13) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1107

RGT20TM65D [ROHM]

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