RGT8TM65D [ROHM]
RGT8TM65D是低VCE(sat)的Field Stop Trench IGBT。适合逆变器、UPS、功率调节器、焊接等用途。;
| 型号： | RGT8TM65D |
| 厂家： | 
ROHM |
| 描述： | RGT8TM65D是低VCE(sat)的Field Stop Trench IGBT。适合逆变器、UPS、功率调节器、焊接等用途。 双极性晶体管 调节器 |
| 文件： | 总11页 (文件大小：1704K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGT8TM65D
Datasheet
650V 4A Field Stop Trench IGBT
Outline
TO-220NFM
VCES
IC (100℃)
VCE(sat) (Typ.)
PD
650V
3A
1.65V@IC=4A
16W
(1)(2)(3)
Features
Inner Circuit
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1
3) Short Circuit Withstand Time 5μs
(1)
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
Packaging Specifications
Packaging
Tube
Applications
General Inverter
Reel Size (mm)
-
-
UPS
Tape Width (mm)
Type
Power Conditioner
Welder
Basic Ordering Unit (pcs)
1,000
C9
Packing Code
RGT8TM65D
Marking
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
V
30
TC = 25°C
5
A
Collector Current
TC = 100°C
IC
3
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
12
A
ICP
TC = 25°C
IF
IF
5
A
TC = 100°C
3
A
*1
12
16
A
IFP
TC = 25°C
PD
PD
Tj
W
W
°C
°C
TC = 100°C
8
Operating Junction Temperature
Storage Temperature
40 to +175
55 to +175
Tstg
*1 Pulse width limited by Tjmax
.
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
1/11
Datasheet
RGT8TM65D
Thermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
9.18
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
°C/W
15.71
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
-
ICES
VCE = 650V, VGE = 0V
Collector Cut - off Current
-
-
10
±200
7.0
μA
nA
V
IGES
VGE = 30V, VCE = 0V
Gate - Emitter Leakage Current
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 2.8mA
5.0
6.0
IC = 4A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.65
2.1
2.1
-
V
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
2/11
Datasheet
RGT8TM65D
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
220
14
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies
Coes
Cres
Qg
V
CE = 30V
GE = 0V
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
f = 1MHz
4.5
13.5
4
VCE = 400V
Qge
Qgc
td(on)
tr
IC = 4A
nC
ns
VGE = 15V
5.5
17
IC = 4A, VCC = 400V
VGE = 15V, RG = 50Ω
Tj = 25°C
36
td(off)
tf
td(on)
tr
td(off)
tf
Turn - off Delay Time
Fall Time
69
Inductive Load
IC = 4A, VCC = 400V
VGE = 15V, RG = 50Ω
Tj = 175°C
71
Turn - on Delay Time
Rise Time
17
37
ns
Turn - off Delay Time
Fall Time
86
Inductive Load
IC = 12A, VCC = 520V
VP = 650V, VGE = 15V
RG = 50Ω, Tj = 175°C
72
Reverse Bias Safe Operating
Area
RBSOA
FULL SQUARE
-
VCC ≦ 360V
tsc
VGE = 15V
Tj = 25°C
Short Circuit Withstand Time
5
-
-
μs
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
3/11
Datasheet
RGT8TM65D
FRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
IF = 4A
VF
Tj = 25°C
Diode Forward Voltage
Diode Reverse Recovery Time
-
-
1.45
1.4
1.9
-
Tj = 175°C
trr
-
-
-
-
-
-
40
4.3
-
-
-
-
-
-
ns
A
IF = 4A
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
Diode Peak Reverse Recovery
Current
Irr
Diode Reverse Recovery
Charge
Qrr
0.09
94
μC
ns
A
trr
Diode Reverse Recovery Time
IF = 4A
VCC = 400V
diF/dt = 200A/μs
Tj = 175°C
Diode Peak Reverse Recovery
Current
Irr
5.4
Diode Reverse Recovery
Charge
Qrr
0.27
μC
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
4/11
Datasheet
RGT8TM65D
Electrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
20
6
5
4
3
2
1
0
15
10
5
Tj≦175ºC
GE≧15V
V
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
Case Temperature : TC [ºC]
Case Temperature : TC [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
100
16
14
12
10
8
10µs
10
1
100µs
6
0.1
0.01
4
Tc=25ºC
Single Pulse
Tj≦175ºC
VGE=15V
2
0
1
10
100
1000
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
5/11
Datasheet
RGT8TM65D
Electrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
12
10
8
12
10
8
Tj=25ºC
Tj=175ºC
VGE=20V
VGE=20V
VGE=15V
VGE=12V
VGE=15V
6
6
VGE=10V
VGE=12V
VGE=10V
4
4
2
2
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation
Voltage vs. Junction Temperature
4
8
VCE=10V
VGE=15V
7
6
5
4
3
3
IC=8A
IC=4A
2
IC=2A
1
2
Tj=175ºC
1
Tj=25ºC
10
Gate to Emitter Voltage : VGE [V]
0
0
25
50
75
100
125
150
175
0
2
4
6
8
12
Junction Temperature : Tj [ºC]
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
6/11
Datasheet
RGT8TM65D
Electrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation
Fig.10 Typical Collector To Emitter Saturation
Voltage vs. Gate To Emitter Voltage
Voltage vs. Gate To Emitter Voltage
20
20
Tj=25ºC
Tj=175ºC
IC=8A
15
15
IC=8A
IC=4A
10
10
IC=4A
IC=2A
IC=2A
5
5
0
0
5
10
15
20
5
10
15
20
Gate to Emitter Voltage : VGE [V]
Gate to Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time vs.
Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
100
10
td(off)
tf
100
10
1
tf
tr
td(off)
td(on)
td(on)
tr
VCC=400V, VGE=15V
RG=50Ω, Tj=175ºC
Inductive load
VCC=400V, IC=4A
VGE=15V, Tj=175ºC
Inductive load
1
0
2
4
6
8
10
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
7/11
Datasheet
RGT8TM65D
Electrical Characteristic Curves
Fig.14 Typical Switching Energy Losses vs.
Gate Resistance
Fig.13 Typical Switching Energy Losses vs.
Collector Current
10
10
1
1
Eon
Eoff
0.1
0.1
VCC=400V, IC=4A
VGE=15V, Tj=175ºC
Inductive load
VCC=400V, VGE=15V
RG=50Ω, Tj=175ºC
Inductive load
Eoff
Eon
0.01
0.01
0
10
20
30
40
50
0
2
4
6
8
10
Gate Resistance : RG [Ω]
Collector Current : IC [A]
Fig.15 Typical Capacitance vs.
Collector To Emitter Voltage
Fig.16 Typical Gate Charge
15
10
5
10000
1000
100
10
Cies
Coes
VCC=400V
IC=4A
Tj=25ºC
f=1MHz
VGE=0V
Tj=25ºC
Cres
0
1
0
5
10
15
0.01
0.1
1
10
100
Collector To Emitter Voltage : VCE[V]
Gate Charge : Qg[nC]
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
8/11
Datasheet
RGT8TM65D
Electrical Characteristic Curves
Fig.18 Typical Diode Reverse Recovery Time
Fig.17 Typical Diode Forward Current vs.
vs. Forward Current
Forward Voltage
12
120
100
80
60
40
20
0
10
8
Tj=175ºC
6
4
Tj=25ºC
Tj=175ºC
VCC=400V
diF/dt=200A/μs
Inductive load
2
Tj=25ºC
0
0
0.5
1
1.5
2
2.5
3
0
2
4
6
8
10
Forward Current : IF [A]
Forward Voltage : VF[V]
Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
10
Fig.20 Typical Diode Reverse Recovery
Charge vs. Forward Current
0.5
VCC=400V
diF/dt=200A/μs
Inductive load
8
6
4
2
0
0.4
0.3
0.2
0.1
0
Tj=175ºC
Tj=175ºC
Tj=25ºC
VCC=400V
diF/dt=200A/μs
Inductive load
Tj=25ºC
0
2
4
6
8
10
0
2
4
6
8
10
Forward Current : IF [A]
Forward Current : IF [A]
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
9/11
Datasheet
RGT8TM65D
Electrical Characteristic Curves
Fig.21 IGBT Transient Thermal Impedance
100
10
1
D= 0.5
0.1
0.2
PDM
Single Pulse
t1
0.01
t2
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
0.02
0.05
0.1
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width : t1[s]
Fig.22 Diode Transient Thermal Impedance
100
10
1
0.1
D= 0.5
0.2
PDM
Single Pulse
t1
0.01
0.02
0.05
t2
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
0.1
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width : t1[s]
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
10/11
Datasheet
RGT8TM65D
Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
D.U.T.
VGE
10%
VG
90%
Fig.23 Inductive Load Circuit
IC
10%
tf
td(off)
td(on)
tr
ton
toff
trr , Qrr
IF
VCE
diF/dt
VCE(sat)
Irr
Fig.25 Diode Reverce Recovery Waveform
Fig.24 Inductive Load Waveform
www.rohm.com
© 2018 ROHM Co., Ltd. All rights reserved.
2018.01 - Rev.A
11/11
相关型号：
SI9130DB
5- and 3.3-V Step-Down Synchronous ConvertersWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135LG-T1-E3
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9135_11
SMBus Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-
VISHAY
©2020 ICPDF网 联系我们和版权申明