RGTH00TS65 [ROHM]
罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。;
| 型号： | RGTH00TS65 |
| 厂家： | 
ROHM |
| 描述： | 罗姆的IGBT（绝缘栅极型双极晶体管）产品为高电压、大电流应用的高效化和节能化作贡献。 栅 双极性晶体管 栅极 |
| 文件： | 总9页 (文件大小：3955K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGTH00TS65GC13
Datasheet
650V 50A Field Stop Trench IGBT
lOutline
TO-247GE
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.6V
277W
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
3) Low Switching Loss & Soft Switching
4) Pb - free Lead Plating ; RoHS Compliant
(1)
lApplications
lPackaging Specifications
PFC
Packaging
Tube
UPS
Reel Size (mm)
-
Power Conditioner
IH
Tape Width (mm)
Type
-
600
Basic Ordering Unit (pcs)
Packing code
Marking
C13
RGTH00TS65
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
650
Unit
V
Gate - Emitter Voltage
V
30
TC = 25°C
85
A
Collector Current
TC = 100°C
IC
50
A
*1
Pulsed Collector Current
Power Dissipation
200
A
ICP
TC = 25°C
PD
PD
Tj
277
W
W
°C
°C
TC = 100°C
138
Operating Junction Temperature
-40 to +175
-55 to +175
Tstg
Storage Temperature
*1 Pulse width limited by Tjmax.
2019.08 - Rev.A
1/9
Datasheet
RGTH00TS65GC13
lThermal Resistance
Values
Typ.
-
Parameter
Thermal Resistance IGBT Junction - Case
Symbol
Rθ(j-c)
Unit
Min.
-
Max.
0.54
°C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
-
ICES
VCE = 650V, VGE = 0V
Collector Cut - off Current
-
-
10
200
6.5
μA
nA
V
IGES
VGE = 30V, VCE = 0V
Gate - Emitter Leakage Current
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 34.7mA
4.5
5.5
IC = 50A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.6
2.1
2.1
-
V
2019.08 - Rev.A
2/9
Datasheet
RGTH00TS65GC13
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
2740
106
43
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies
Coes
Cres
Qg
VCE = 30V
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
f = 1MHz
VCE = 300V
94
Qge
Qgc
td(on)
tr
IC = 50A
22
nC
ns
VGE = 15V
31
IC = 50A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 25°C
39
63
td(off)
tf
td(on)
tr
td(off)
tf
Turn - off Delay Time
Fall Time
143
50
Inductive Load
IC = 50A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 175°C
Turn - on Delay Time
Rise Time
39
63
ns
Turn - off Delay Time
Fall Time
159
62
Inductive Load
IC = 200A, VCC = 520V
VP = 650V, VGE = 15V
RG = 60Ω, Tj = 175°C
Reverse Bias Safe Operating Area
RBSOA
FULL SQUARE
-
2019.08 - Rev.A
3/9
Datasheet
RGTH00TS65GC13
lElectrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
300
280
260
240
220
200
180
160
140
120
100
80
90
80
70
60
50
40
30
20
60
40
20
ꢀ
Tj≦175ºC
GE≧15V
10
V
0
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
1000
240
220
200
180
160
140
120
100
80
10µs
100
10
100µs
1
60
0.1
0.01
40
TC= 25ºC
Single Pulse
Tj≦175ºC
VGE=15V
20
0
1
10
100
1000
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
2019.08 - Rev.A
4/9
Datasheet
RGTH00TS65GC13
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
200
200
Tj= 25ºC
Tj= 175ºC
180
180
160
140
120
100
80
VGE= 20V
VGE= 20V
160
VGE= 15V
140
VGE= 15V
VGE= 12V
120
100
80
60
40
20
0
VGE= 12V
VGE= 10V
VGE= 8V
VGE= 10V
60
40
VGE= 8V
20
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
4
60
VCE= 10V
VGE= 15V
IC= 100A
50
40
30
20
10
0
3
IC= 50A
2
IC= 25A
Tj= 175ºC
1
Tj= 25ºC
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
2019.08 - Rev.A
5/9
Datasheet
RGTH00TS65GC13
lElectrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
vs. Gate To Emitter Voltage
20
20
Tj= 175ºC
Tj= 25ºC
IC= 100A
15
10
5
15
IC= 100A
IC= 50A
IC= 25A
IC= 50A
10
IC= 25A
5
0
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
Fig.11 Typical Switching Time
vs. Collector Current
1000
td(off)
td(off)
tf
100
100
tf
tr
td(on)
td(on)
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive ｌoad
tr
10
10
0
10 20 30 40 50 60 70 80 90 100
Collector Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
2019.08 - Rev.A
6/9
Datasheet
RGTH00TS65GC13
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Collector Current
vs. Gate Resistance
10
10
Eoff
1
1
Eoff
Eon
Eon
0.1
0.1
0.01
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
Inductive ｌoad
0.01
0
10 20 30 40 50 60 70 80 90 100
Collector Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Fig.16 Typical Gate Charge
10000
1000
100
10
15
10
5
Cies
Coes
Cres
f=1MHz
VGE=0V
Tj=25ºC
VCC=300V
IC=50A
Tj=25ºC
1
0
0.01
0.1
1
10
100
0
10 20 30 40 50 60 70 80 90 100
Gate Charge : Qg [nC]
Collector To Emitter Voltage : VCE[V]
2019.08 - Rev.A
7/9
Datasheet
RGTH00TS65GC13
lElectrical Characteristic Curves
Fig.17 IGBT Transient Thermal Impedance
10
1
D= 0.5
0.2
0.1
PDM
0.1
0.01
t1
t2
Duty=t1/t2
Peak Tj=PDM×ZthJC+TC
Single Pulse
0.01
0.02
0.05
0.0001
0.001
0.01
0.1
1
Pulse Width : t1[s]
2019.08 - Rev.A
8/9
Datasheet
RGTH00TS65GC13
lInductive Load Switching Circuit and Waveform
Gate Drive Time
90%
VGE
D.U.T.
10%
VG
90%
10%
IC
td(on)
Fig.18 Inductive Load Circuit
td(off)
tf
tr
ton
toff
VCE
VCE(sat)
Fig.19 Inductive Load Waveform
2019.08 - Rev.A
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