RGTV00TS65D [ROHM]
RGTV00TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。;型号: | RGTV00TS65D |
厂家: | ROHM |
描述: | RGTV00TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。 开关 双极性晶体管 功率因数校正 电视 |
文件: | 总12页 (文件大小:1538K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGTV00TS65D
Datasheet
650V 50A Field Stop Trench IGBT
Outline
TO-247N
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.5V
276W
(1)(2)(3)
Features
Inner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching & Low Switching Loss
3) Short Circuit Withstand Time 2μs
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1
(1)
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
*1 Built in FRD
Packaging Specifications
Packaging
Tube
Applications
Solar Inverter
Reel Size (mm)
-
-
UPS
Welding
IH
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
450
C11
Packing Code
RGTV00TS65D
PFC
Marking
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
V
30
TC = 25°C
95
A
Collector Current
TC = 100°C
IC
50
200
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
A
ICP
TC = 25°C
IF
IF
84
A
TC = 100°C
50
A
*1
200
A
IFP
TC = 25°C
PD
PD
Tj
276
W
W
°C
°C
TC = 100°C
138
Operating Junction Temperature
40 to +175
55 to +175
Tstg
Storage Temperature
*1 Pulse width limited by Tjmax.
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
1/11
Datasheet
RGTV00TS65D
Thermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.54
0.80
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
°C/W
°C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
-
ICES
VCE = 650V, VGE = 0V
Collector Cut - off Current
-
-
10
±200
7.0
μA
nA
V
IGES
VGE = 30V, VCE = 0V
Gate - Emitter Leakage Current
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 34.3mA
5.0
6.0
IC = 50A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.5
1.9
-
V
1.85
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
2/11
Datasheet
RGTV00TS65D
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
2890
116
48
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies
Coes
Cres
Qg
VCE = 30V
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
f = 1MHz
VCE = 400V
104
21
Qge
Qgc
td(on)
tr
IC = 50A
nC
VGE = 15V
37
IC = 50A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 25°C
41
20
ns
mJ
ns
td(off)
tf
Turn - off Delay Time
Fall Time
142
38
Inductive Load
*Eon includes diode
reverse recovery
IC = 50A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 175°C
Eon
Eoff
td(on)
tr
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
1.17
0.94
39
23
td(off)
tf
Turn - off Delay Time
Fall Time
167
80
Inductive Load
*Eon includes diode
reverse recovery
IC = 200A, VCC = 520V
VP = 650V, VGE = 15V
RG = 100Ω, Tj = 175°C
Eon
Eoff
Turn - on Switching Loss
Turn - off Switching Loss
1.25
1.28
mJ
-
Reverse Bias Safe Operating Area
Short Circuit Withstand Time
RBSOA
FULL SQUARE
V
CC ≦ 360V
tsc
V
GE = 15V
2
-
-
μs
Tj = 25°C
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
3/11
Datasheet
RGTV00TS65D
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
IF = 50A
VF
Tj = 25°C
Diode Forward Voltage
Diode Reverse Recovery Time
-
-
1.45
1.55
1.9
-
Tj = 175°C
trr
-
-
-
-
-
-
-
-
102
11.2
0.64
29.5
177
-
-
-
-
-
-
-
-
ns
A
IF = 50A
Diode Peak Reverse Recovery
Current
Irr
VCC = 400V
diF/dt = 200A/μs
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
μC
μJ
ns
A
Diode Reverse Recovery Energy
Diode Reverse Recovery Time
IF = 50A
Diode Peak Reverse Recovery
Current
Irr
15.2
1.62
104.8
V
CC = 400V
diF/dt = 200A/μs
Diode Reverse Recovery
Charge
Qrr
Err
μC
μJ
Tj = 175°C
Diode Reverse Recovery Energy
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
4/11
Datasheet
RGTV00TS65D
Electrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
300
280
260
240
220
200
180
160
140
120
100
80
110
100
90
80
70
60
50
40
30
20
60
40
20
0
ꢀ
Tj≦175ºC
GE≧15V
V
10
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
1000
240
220
200
180
160
140
120
100
80
10µs
100
10
100µs
1
60
0.1
0.01
TC= 25ºC
Single Pulse
40
Tj≦175ºC
VGE=15V
20
0
1
10
100
1000
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
5/11
Datasheet
RGTV00TS65D
Electrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
200
200
Tj= 25ºC
Tj= 175ºC
180
160
140
120
100
80
180
160
140
120
100
80
VGE= 12V
VGE= 20V
VGE= 15V
VGE= 20V
VGE= 15V
VGE= 12V
VGE= 10V
VGE= 8V
VGE= 10V
VGE= 8V
60
60
40
40
20
20
0
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
60
4
VGE= 15V
VCE= 10V
50
40
30
20
10
0
3
IC= 100A
IC= 50A
2
IC= 25A
1
Tj= 175ºC
Tj= 25ºC
0
25
50
75
100
125
150
175
0
2
4
6
8
10
12
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
6/11
Datasheet
RGTV00TS65D
Electrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
vs. Gate To Emitter Voltage
20
20
Tj= 25ºC
Tj= 175ºC
15
15
IC= 100A
IC= 100A
IC= 50A
10
10
IC= 50A
IC= 25A
IC= 25A
5
5
0
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
Fig.11 Typical Switching Time
vs. Collector Current
1000
td(off)
td(off)
100
10
1
100
10
1
tf
tf
td(on)
tr
td(on)
tr
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive load
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
0
10 20 30 40 50 60 70 80 90 100
Collector Current : IC [A]
0
10
20
30
40
50
Gate Resistance : RG [Ω]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
7/11
Datasheet
RGTV00TS65D
Electrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
vs. Collector Current
10
10
Eoff
1
1
Eoff
Eon
Eon
0.1
0.1
0.01
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive load
0.01
0
10
20
30
40
50
0
10 20 30 40 50 60 70 80 90 100
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.16 Typical Gate Charge
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
1000
100
10
15
10
5
Cies
Coes
Cres
f=1MHz
VGE=0V
Tj=25ºC
VCC=400V
IC=50A
Tj=25ºC
1
0
0.01
0.1
1
10
100
0
10 20 30 40 50 60 70 80 90 100110
Gate Charge : Qg [nC]
Collector To Emitter Voltage : VCE[V]
www.rohm.com
© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
8/11
Datasheet
RGTV00TS65D
Electrical Characteristic Curves
Fig.17 Typical Diode Forward Current
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
vs. Forward Voltage
200
400
VCC=400V
diF/dt=200A/µs
Inductive load
180
160
140
300
200
100
0
120
Tj= 25ºC
100
Tj= 175ºC
Tj= 175ºC
80
60
40
20
0
Tj= 25ºC
0
0.5
1
1.5
2
2.5
3
0
10 20 30 40 50 60 70 80 90 100
Forward Current : IF [A]
Forward Voltage : VF[V]
Fig.19 Typical Diode Reverse Recovery Current
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
20
vs. Forward Current
2.5
VCC=400V
diF/dt=200A/µs
Inductive load
2
1.5
1
15
10
5
Tj= 175ºC
Tj= 175ºC
Tj= 25ºC
0.5
0
VCC=400V
diF/dt=200A/µs
Inductive load
Tj= 25ºC
0
0
10 20 30 40 50 60 70 80 90 100
Forward Current : IF [A]
0
10 20 30 40 50 60 70 80 90 100
Forward Current : IF [A]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
9/11
Datasheet
RGTV00TS65D
Electrical Characteristic Curves
Fig.21 Typical IGBT Transient Thermal Impedance
1
D= 0.5
0.2
0.1
0.1
PDM
0.01
0.001
Single Pulse
t1
0.01
t2
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
0.02
0.05
C1
C2
C3
R1
764.2u 3.034m 2.519m 131.5m 168.5m 40.00m
R2
R3
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1[s]
Fig.22 Typical Diode Transient Thermal Impedance
1
D= 0.5
0.2
0.1
0.1
PDM
0.01
Single Pulse
0.01
t1
0.02
0.05
t2
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
C1
C2
C3
R1
483.4u 634.1u 4.584m 64.17m 123.7m 312.1m
R2
R3
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1[s]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
10/11
Datasheet
RGTV00TS65D
Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
IC
10
Fig.23 Inductive Load Circuit
td(off)
tf
td(on)
tr
ton
toff
trr , Qrr
IF
VCE
diF/dt
10
VCE(sat)
Eon
Eoff
Irr
Fig.24 Inductive Load Waveform
Fig.25 Diode Reverce Recovery Waveform
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
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