RGTV60TS65D [ROHM]
RGTV60TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。;型号: | RGTV60TS65D |
厂家: | ROHM |
描述: | RGTV60TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。 开关 双极性晶体管 功率因数校正 电视 |
文件: | 总12页 (文件大小:1326K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGTV60TS65D
Datasheet
650V 30A Field Stop Trench IGBT
Outline
TO-247N
VCES
IC(100°C)
VCE(sat) (Typ.)
PD
650V
30A
1.5V
194W
(1)(2)(3)
Features
Inner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching & Low Switching Loss
3) Short Circuit Withstand Time 2μs
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1
(1)
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
*1 Built in FRD
Packaging Specifications
Packaging
Tube
Applications
Solar Inverter
Reel Size (mm)
-
-
UPS
Welding
IH
Tape Width (mm)
Type
Basic Ordering Unit (pcs)
450
C11
Packing Code
RGTV60TS65D
PFC
Marking
Absolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
V
30
TC = 25°C
60
A
Collector Current
TC = 100°C
IC
30
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
120
A
ICP
TC = 25°C
IF
IF
56
30
A
TC = 100°C
A
*1
120
A
IFP
TC = 25°C
PD
PD
Tj
194
W
W
°C
°C
TC = 100°C
97
Operating Junction Temperature
40 to +175
55 to +175
Tstg
Storage Temperature
*1 Pulse width limited by Tjmax.
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
1/11
Datasheet
RGTV60TS65D
Thermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.77
1.17
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
°C/W
°C/W
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
-
-
ICES
VCE = 650V, VGE = 0V
Collector Cut - off Current
-
-
10
±200
7.0
μA
nA
V
IGES
VGE = 30V, VCE = 0V
Gate - Emitter Leakage Current
-
Gate - Emitter Threshold
Voltage
VGE(th) VCE = 5V, IC = 21.0mA
5.0
6.0
IC = 30A, VGE = 15V
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.5
1.9
-
V
1.85
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
2/11
Datasheet
RGTV60TS65D
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
1730
74
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies
Coes
Cres
Qg
VCE = 30V
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
f = 1MHz
30
VCE = 400V
64
Qge
Qgc
td(on)
tr
IC = 30A
14
nC
VGE = 15V
24
IC = 30A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 25°C
33
12
ns
mJ
ns
td(off)
tf
Turn - off Delay Time
Fall Time
105
40
Inductive Load
*Eon includes diode
reverse recovery
IC = 30A, VCC = 400V
VGE = 15V, RG = 10Ω
Tj = 175°C
Eon
Eoff
td(on)
tr
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
0.57
0.50
32
13
td(off)
tf
Turn - off Delay Time
Fall Time
121
80
Inductive Load
*Eon includes diode
reverse recovery
IC = 120A, VCC = 520V
VP = 650V, VGE = 15V
RG = 100Ω, Tj = 175°C
Eon
Eoff
Turn - on Switching Loss
Turn - off Switching Loss
0.63
0.72
mJ
-
Reverse Bias Safe Operating Area
Short Circuit Withstand Time
RBSOA
FULL SQUARE
V
CC ≦ 360V
tsc
V
GE = 15V
2
-
-
μs
Tj = 25°C
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
3/11
Datasheet
RGTV60TS65D
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
IF = 30A
VF
Tj = 25°C
Diode Forward Voltage
Diode Reverse Recovery Time
-
-
1.45
1.55
1.9
-
Tj = 175°C
trr
-
-
-
-
-
-
-
-
95
-
-
-
-
-
-
-
-
ns
A
IF = 30A
Diode Peak Reverse Recovery
Current
Irr
8.1
V
CC = 400V
diF/dt = 200A/μs
Diode Reverse Recovery
Charge
Qrr
Err
trr
0.42
19.3
155
10.4
0.95
62.5
μC
μJ
ns
A
Tj = 25°C
Diode Reverse Recovery Energy
Diode Reverse Recovery Time
IF = 30A
Diode Peak Reverse Recovery
Current
Irr
V
CC = 400V
diF/dt = 200A/μs
Diode Reverse Recovery
Charge
Qrr
Err
μC
μJ
Tj = 175°C
Diode Reverse Recovery Energy
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
4/11
Datasheet
RGTV60TS65D
Electrical Characteristic Curves
Fig.1 Power Dissipation vs. Case Temperature
Fig.2 Collector Current vs. Case Temperature
220
200
180
160
140
120
100
80
70
60
50
40
30
20
60
40
ꢀ
Tj≦175ºC
GE≧15V
10
0
V
20
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
1000
160
10µs
140
120
100
80
100
10
100µs
1
60
40
0.1
0.01
TC= 25ºC
Single Pulse
Tj≦175ºC
VGE=15V
20
0
1
10
100
1000
0
200
400
600
800
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
5/11
Datasheet
RGTV60TS65D
Electrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
120
120
Tj= 25ºC
Tj= 175ºC
VGE= 12V
100
80
60
40
20
0
100
80
60
40
20
0
VGE= 20V
VGE= 15V
VGE= 20V
VGE= 15V
VGE= 12V
VGE= 10V
VGE= 10V
VGE= 8V
VGE= 8V
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE[V]
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
60
4
VGE= 15V
VCE= 10V
50
40
30
20
10
0
3
IC= 60A
IC= 30A
2
IC= 15A
1
Tj= 175ºC
Tj= 25ºC
10
0
25
50
75
100
125
150
175
0
2
4
6
8
12
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [ºC]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
6/11
Datasheet
RGTV60TS65D
Electrical Characteristic Curves
Fig.9 Typical Collector To Emitter Saturation Voltage
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
vs. Gate To Emitter Voltage
20
20
Tj= 25ºC
Tj= 175ºC
15
15
IC= 60A
IC= 60A
IC= 30A
IC= 30A
IC= 15A
10
5
10
IC= 15A
5
0
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.12 Typical Switching Time
vs. Gate Resistance
Fig.11 Typical Switching Time
vs. Collector Current
1000
1000
td(off)
100
10
1
100
10
1
td(off)
tf
tf
td(on)
td(on)
tr
tr
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
0
10
20
30
40
50
60
0
10
20
30
40
50
Collector Current : IC [A]
Gate Resistance : RG [Ω]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
7/11
Datasheet
RGTV60TS65D
Electrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
vs. Collector Current
10
10
Eoff
1
1
Eoff
Eon
0.1
0.01
0.1
Eon
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
VCC=400V, IC=30A
VGE=15V, Tj=175ºC
Inductive load
0.01
0
10
20
30
40
50
0
10
20
30
40
50
60
Collector Current : IC [A]
Gate Resistance : RG [Ω]
Fig.16 Typical Gate Charge
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
1000
100
10
15
10
5
Cies
Coes
Cres
10
f=1MHz
VGE=0V
Tj=25ºC
VCC=400V
IC=30A
Tj=25ºC
1
0.01
0
0.1
1
100
0
10
20
30
40
50
60
70
Collector To Emitter Voltage : VCE[V]
Gate Charge : Qg [nC]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
8/11
Datasheet
RGTV60TS65D
Electrical Characteristic Curves
Fig.17 Typical Diode Forward Current
Fig.18 Typical Diode Reverse Recovery Time
vs. Forward Current
vs. Forward Voltage
120
400
VCC=400V
diF/dt=200A/µs
Inductive load
100
80
300
200
100
0
Tj= 25ºC
60
Tj= 175ºC
Tj= 175ºC
40
20
0
Tj= 25ºC
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
60
Forward Voltage : VF[V]
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery Current
Fig.20 Typical Diode Reverse Recovery Charge
vs. Forward Current
20
vs. Forward Current
2.5
VCC=400V
diF/dt=200A/µs
Inductive load
2
1.5
1
15
Tj= 175ºC
10
Tj= 175ºC
5
Tj= 25ºC
0.5
0
VCC=400V
diF/dt=200A/µs
Inductive load
Tj= 25ºC
20 30
Forward Current : IF [A]
0
0
10
20
30
40
50
60
0
10
40
50
60
Forward Current : IF [A]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
9/11
Datasheet
RGTV60TS65D
Electrical Characteristic Curves
Fig.21 Typical IGBT Transient Thermal Impedance
1
0.1
D= 0.5
0.2
0.1
PDM
0.01
Single Pulse
t1
0.01
t2
Duty=t1/t2
0.02
0.05
Peak Tj=PDM×ZthJC+TC
C1
C2
C3
R1
557.2u 1.609m 537.6m 194.6m 283.3m 2.100m
R2
R3
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1[s]
Fig.22 Typical Diode Transient Thermal Impedance
1
0.1
D= 0.5
0.1
0.2
Single Pulse
PDM
0.01
0.01
0.02
t1
0.05
t2
Duty=t1/t2
C1
C2
C3
R1
R2
356.0u 1.250m 6.974m 172.8m 273.3m 273.9m
R3
Peak Tj=PDM×ZthJC+TC
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1[s]
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
10/11
Datasheet
RGTV60TS65D
Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
IC
10
Fig.23 Inductive Load Circuit
td(off)
tf
td(on)
tr
ton
toff
trr , Qrr
IF
VCE
diF/dt
10
VCE(sat)
Eon
Eoff
Irr
Fig.24 Inductive Load Waveform
Fig.25 Diode Reverce Recovery Waveform
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© 2017 ROHM Co., Ltd. All rights reserved.
2017.05 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
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R1102
A
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