RGTVX6TS65D [ROHM]

RGTVX6TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。;


型号：	RGTVX6TS65D
厂家：	ROHM
描述：	RGTVX6TS65D是低VCE(sat)、低开关损耗的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。开关双极性晶体管功率因数校正电视
文件：	总12页 (文件大小：1203K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RGTVX6TS65D

650V 80A Field Stop Trench IGBT

Datasheet

lOutline

TO-247N

V_CES

I_{C (100°C)}

V_{CE(sat) (Typ.)}

P_D

650V

80A

1.5V

404W

(1)(2)(3)

lFeatures

lInner Circuit

1) Low Collector - Emitter Saturation Voltage

2) High Speed Switching & Low Switching Loss

3) Short Circuit Withstand Time 2μs

(2)

(3)

(1) Gate

(2) Collector

(3) Emitter

(1)

4) Built in Very Fast & Soft Recovery FRD

5) Pb - free Lead Plating ; RoHS Compliant

*1 Built in FRD

lApplication

lPackaging Specifications

Solar Inverter

Packaging

Tube

UPS

Welding

Reel Size (mm)

Tape Width (mm)

Type

450

Basic Ordering Unit (pcs)

PFC

Packing Code

Marking

C11

RGTVX6TS65D

lAbsolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

Unit

650

±30

Gate - Emitter Voltage

T_C= 25°C

144

Collector Current

T_C= 100°C

I_C

Pulsed Collector Current

Diode Forward Current

Diode Pulsed Forward Current

Power Dissipation

320

I_CP

T_C= 25°C

I_F

127

T_C= 100°C

320

I_FP

T_C= 25°C

P_D

T_j

404

°C

T_C= 100°C

202

Operating Junction Temperature

Storage Temperature

-40 to +175

-55 to +175

T_stg

*1 Pulse width limited by T_jmax.

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2019.01 - Rev.A

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Datasheet

RGTVX6TS65D

lThermal Resistance

Values

Parameter

Symbol

Unit

Min.

Typ.

Max.

0.37

0.57

R_θ(j-c)

Thermal Resistance IGBT Junction - Case

Thermal Resistance Diode Junction - Case

C/W

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

650

Max.

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

I_CESV_CE= 650V, V_GE= 0V

I_GESV_GE= ±30V, V_CE= 0V

V_GE(th)V_CE= 5V, I_C= 57.1mA

Collector Cut - off Current

±200

7.0

μA

Gate - Emitter Leakage

Current

Gate - Emitter Threshold

Voltage

5.0

6.0

I_C= 80A, V_GE= 15V,

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

1.5

1.9

1.85

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2019.01 - Rev.A

2/11

Datasheet

RGTVX6TS65D

lIGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

4810

184

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_iesV_CE= 30V,

C_oesV_GE= 0V,

Input Capacitance

Output Capacitance

Reverse transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

C_res

Q_g

f = 1MHz

V_CE= 400V,

171

Q_geI_C= 80A,

Q_gcV_GE= 15V

t_d(on)

I_C= 80A, V_CC= 400V,

V_GE= 15V, R_G= 10Ω,

T_j= 25°C

Inductive Load

*E_oninclude diode

reverse recovery

t_r

t_d(off)

t_f

Turn - off Delay Time

Fall Time

201

E_on

E_off

t_d(on)

t_r

Turn - on Switching Loss

Turn - off Switching Loss

Turn - on Delay Time

Rise Time

2.65

1.80

I_C= 80A, V_CC= 400V,

V_GE= 15V, R_G= 10Ω,

T_j= 175°C

Inductive Load

*E_oninclude diode

reverse recovery

t_d(off)

t_f

Turn - off Delay Time

Fall Time

218

E_on

E_off

Turn - on Switching Loss

Turn - off Switching Loss

2.74

2.31

I_C= 320A, V_CC= 520V,

V_P= 650V, V_GE= 15V,

R_G= 100Ω, T_j= 175℃

Reverse Bias Safe Operating

Area

RBSOA

FULL SQUARE

V_CC≦ 360V,

t_sc

V_GE= 15V,

Short Circuit Withstand Time

μs

T_j= 25℃

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2019.01 - Rev.A

3/11

Datasheet

RGTVX6TS65D

lFRD Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

I_F= 80A,

Unit

Min.

Max.

V_F

T_j= 25°C

Diode Forward Voltage

1.45

1.55

1.9

T_j= 175°C

Diode Reverse Recovery

Time

t_rr

109

12.8

0.79

30.0

204

Diode Peak Reverse

Recovery Current

I_F= 80A,

I_rr

V_CC= 400V,

di_F/dt = 200A/μs,

T_j= 25°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

t_rr

μC

μJ

Diode Reverse Recovery

Energy

Diode Reverse Recovery

Time

Diode Peak Reverse

Recovery Current

I_F= 80A,

I_rr

18.2

2.22

119.3

V_CC= 400V,

di_F/dt = 200A/μs,

T_j= 175°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

μC

μJ

Diode Reverse Recovery

Energy

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2019.01 - Rev.A

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Datasheet

RGTVX6TS65D

lElectrical Characteristic Curves

Fig.1 Power Dissipation

vs. Case Temperature

450

Fig.2 Collector Current

vs. Case Temperature

160

140

120

100

400

350

300

250

200

150

100

T_j≤ 175ºC

V_GE≥ 15V

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

25 50 75 100 125 150 175

Case Temperature : T_C[°C ]

Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area

400

350

300

250

200

150

100

1000

10μs

100

100μs

0.1

T_j≤ 175ºC

V_GE= 15V

T_C= 25ºC

Single Pulse

0.01

200

400

600

800

100

1000

Collector To Emitter Voltage : V_CE[V]

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2019.01 - Rev.A

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Datasheet

RGTVX6TS65D

lElectrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

320

T_ｊ= 25ºC

T_ｊ= 175ºC

280

V_GE= 12V

V_GE= 20V

240

V_GE= 20V

V_GE= 15V

240

200

160

120

V_GE= 15V

200

V_GE= 10V

V_GE= 12V

160

V_GE= 10V

120

V_GE= 8V

Collector To Emitter Voltage : V_CE[V]

Fig.8 Typical Collector to Emitter Saturation

Voltage vs. Junction Temperature

Fig.7 Typical Transfer Characteristics

V_GE= 15V

V_CE= 10V

I_C= 160A

I_C= 80A

I_C= 40A

T_j= 175ºC

T_j= 25ºC

25 50 75 100 125 150 175

10 12

Gate To Emitter Voltage : V_GE[V]

Junction Temperature : T_j[°C ]

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2019.01 - Rev.A

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Datasheet

RGTVX6TS65D

lElectrical Characteristic Curves

Fig.9 Typical Collector to Emitter Saturation

Voltage vs. Gate to Emitter Voltage

Fig.10 Typical Collector to Emitter Saturation

Voltage vs. Gate to Emitter Voltage

T_j= 175ºC

T_j= 25ºC

I_C= 160A

I_C= 80A

I_C= 40A

Gate To Emitter Voltage : V_GE[V]

Fig.11 Typical Switching Time

vs. Collector Current

Fig.12 Typical Switching Time

vs. Gate Resistance

1000

t_d(off)

t_f

100

t_f

t_d(on)

t_r

V_CC= 400V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

V_CC= 400V, V_GE= 15V,

I_C= 80A, T_j= 175ºC

Inductive load

0 20 40 60 80 100 120 140 160

Collecter Current : I_C[A]

Gate Resistance : R_g[Ω]

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2019.01 - Rev.A

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Datasheet

RGTVX6TS65D

lElectrical Characteristic Curves

Fig.13 Typical Switching Energy Losses

vs. Collector Current

Fig.14 Typocal Switching Energy Losses

vs. Gate Resistance

E_on

E_off

E_on

0.1

0.01

V_CC= 400V, V_GE= 15V,

R_G= 10Ω, T_j= 175ºC

Inductive load

V_CC= 400V, I_C= 80A,

V_GE= 15V, T_j= 175ºC

Inductive load

0.01

0 20 40 60 80 100 120 140 160

Collecter Current : I_C[A]

Gate Resistance : R_G[Ω]

Fig.15 Typical Capacitance

vs. Collector to Emitter Voltage

10000

Fig.16 Typical Gate Charge

C_ies

1000

C_oes

100

C_res

f = 1MHz

V_GE= 0V

T_j= 25ºC

V_CC= 400V

I_C= 80A

T_j= 25ºC

0.01

0.1

100

0 20 40 60 80 100120140160180

Gate Charge : Q_g[nC]

Collector To Emitter Voltage : V_CE[V]

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2019.01 - Rev.A

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Datasheet

RGTVX6TS65D

lElectrical Characteristic Curves

Fig.17 Typical Diode Forward Current

vs. Forward Voltage

Fig.18 Typical Diode Revese Recovery Time

vs. Forward Current

320

280

240

200

400

300

T_j= 175ºC

160

200

T_j= 25ºC

120

T_j= 175ºC

100

V_CC= 400V

di_F/dt = 200A/μs

Inductive load

T_j= 25ºC

0.5

1.5

2.5

0 20 40 60 80 100 120 140 160

Forward Current : I_F[A]

Forward Voltage : V_F[V]

Fig.19 Typical Diode Reverse Recovery

Current vs. Forward Current

Fig.20 Typical Diode Rrverse Recovery

Charge vs. Forward Current

2.5

T_j= 175ºC

1.5

T_j= 25ºC

0.5

V_CC= 400V

di_F/dt = 200A/μs

Inductive load

di_F/dt = 200A/μs

Inductive load

T_j= 25ºC

0 20 40 60 80 100 120 140 160

Forward Current : I_F[A]

0 20 40 60 80 100 120 140 160

Forward Current : I_F[A]

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2019.01 - Rev.A

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Datasheet

RGTVX6TS65D

lElectrical Characteristic Curves

Fig.21 Typical IGBT Transient Thermal Impedance

D = 0.5

0.2

0.1

P_DM

t₁

0.01

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

Single Pulse

0.01

0.02

1.112m 3.960m 3.962m 80.43m 46.72m 112.9m

R1 R2 R3

0.05

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t₁[s]

Fig.22 Typical Diode Transient Thermal Impedance

D = 0.5

0.2

0.1

P_DM

t₁

0.01

Single Pulse

t₂

Duty = t₁/t₂

Peak T_j= P_DM×Z_θ(j-c)+T_C

0.01

0.02

0.05

702.7u 1.143m 11.70m 69.97m 92.88m 197.2m

R1 R2 R3

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t₁[s]

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2019.01 - Rev.A

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Datasheet

RGTVX6TS65D

●Inductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

V_GE

D.U.T.

10%

V_G

90%

10%

I_C

Fig.23 Inductive Load Circuit

t_r

t_f

t_d(on)

t_d(off)

t_{rr ,}Q_rr

t_on

t_off

I_F

di_F/dt

V_CE

10%

I_rr

V_CE(sat)

E_on

E_off

Fig.25 Diode Reverse Recovery Waveform

Fig.24 Inductive Load Waveform

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2019.01 - Rev.A

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

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More detail product informations and catalogs are available, please contact us.

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http://www.rohm.com/contact/

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R1102

RGTVX6TS65D [ROHM]

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