RGW00TS65EHR [ROHM]
RGW00TS65EHR是以高速开关为特点的IGBT。适合车载/非车载充电器、DC/DC转换器、PFC、工业用变频电机等应用。是符合AEC-Q101标准的高可靠性产品。RGTV/RGW系列是消除了IGBT的低导通损耗及高速开关特性两者此消彼长关系的高效系列。并且实现了顺畅的软开关,降低了开关时的电压过冲,有助于大幅降低设计负担。;型号: | RGW00TS65EHR |
厂家: | ROHM |
描述: | RGW00TS65EHR是以高速开关为特点的IGBT。适合车载/非车载充电器、DC/DC转换器、PFC、工业用变频电机等应用。是符合AEC-Q101标准的高可靠性产品。RGTV/RGW系列是消除了IGBT的低导通损耗及高速开关特性两者此消彼长关系的高效系列。并且实现了顺畅的软开关,降低了开关时的电压过冲,有助于大幅降低设计负担。 开关 电机 双极性晶体管 功率因数校正 电视 转换器 |
文件: | 总14页 (文件大小:1495K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RGW00TS65EHR
650V 50A Field Stop Trench IGBT
Datasheet
lOutline
TO-247N
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
650V
50A
1.5V
254W
(1)(2)(3)
lFeatures
1) AEC-Q101 Qualified
lInner Circuit
(2)
(3)
(1) Gate
2) Low Collector - Emitter Saturation Voltage
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
(2) Collector
(3) Emitter
*1
(1)
*1 Built in FRD
lApplication
lPackaging Specifications
Automotive
Packaging
Tube
On & Off Board Chargers
DC-DC Converters
PFC
Reel Size (mm)
-
Tape Width (mm)
Type
-
450
Basic Ordering Unit (pcs)
Industrial Inverter
Packing Code
Marking
C11
RGW00TS65E
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
650
±30
96
Unit
V
Gate - Emitter Voltage
V
TC = 25°C
A
Collector Current
TC = 100°C
IC
58
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
200
84
A
ICP
TC = 25°C
IF
IF
A
TC = 100°C
50
A
*1
200
254
127
A
IFP
TC = 25°C
PD
PD
Tj
W
W
TC = 100°C
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
°C
°C
Tstg
*1 Pulse width limited by Tjmax.
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
1/12
Datasheet
RGW00TS65EHR
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
0.59
0.80
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
ICES VCE = 650V, VGE = 0V
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 33.0mA
-
-
Collector Cut - off Current
-
-
10
±200
7.0
μA
nA
V
Gate - Emitter Leakage
Current
-
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 50A, VGE = 15V,
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.5
1.9
-
V
1.85
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
2/12
Datasheet
RGW00TS65EHR
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
4200
104
79
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V,
Coes VGE = 0V,
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
VCE = 400V,
141
30
Qge IC = 50A,
Qgc VGE = 15V
td(on)
nC
52
50
IC = 25A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
12
ns
mJ
ns
Turn - off Delay Time
Fall Time
183
38
Eon
Eoff
td(on)
tr
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
0.47
0.43
46
IC = 25A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
14
td(off)
tf
Turn - off Delay Time
Fall Time
213
75
Eon
Eoff
Turn - on Switching Loss
Turn - off Switching Loss
0.48
0.61
mJ
-
IC = 200A, VCC = 520V,
VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175℃
Reverse Bias Safe Operating
Area
RBSOA
FULL SQUARE
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
3/12
Datasheet
RGW00TS65EHR
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
IF = 50A,
Unit
V
Min.
Max.
VF
Tj = 25°C
Diode Forward Voltage
-
-
1.45
1.55
1.9
-
Tj = 175°C
Diode Reverse Recovery
Time
trr
-
-
-
-
-
-
-
-
90
-
-
-
-
-
-
-
-
ns
A
Diode Peak Reverse
Recovery Current
IF = 25A,
Irr
9.5
VCC = 400V,
diF/dt = 200A/μs,
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
0.46
21.0
167
13.2
1.32
90.0
μC
μJ
ns
A
Diode Reverse Recovery
Energy
Diode Reverse Recovery
Time
Diode Peak Reverse
Recovery Current
IF = 25A,
Irr
VCC = 400V,
diF/dt = 200A/μs,
Tj = 175°C
Diode Reverse Recovery
Charge
Qrr
Err
μC
μJ
Diode Reverse Recovery
Energy
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
4/12
Datasheet
RGW00TS65EHR
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
280
Fig.2 Collector Current
vs. Case Temperature
110
100
90
80
70
60
50
40
30
20
10
0
240
200
160
120
80
40
Tj ≤ 175ºC
VGE ≥ 15V
0
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
Fig.4 Reverse Bias Safe Operating Area
240
220
200
180
160
140
120
100
80
1000
1μs
100
10μs
100μs
10
1
60
40
20
0
0.1
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
0.01
0
200
400
600
800
1
10
100
1000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
5/12
Datasheet
RGW00TS65EHR
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
200
Fig.6 Typical Output Characteristics
200
Tj = 25ºC
Tj = 175ºC
180
180
VGE = 20V
VGE = 20V
160
160
VGE = 15V
140
140
VGE = 10V
VGE = 12V
VGE = 15V
120
100
80
120
VGE = 12V
VGE = 10V
VGE = 8V
100
80
60
40
20
0
VGE = 8V
60
40
20
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector to Emitter Saturation
Voltage vs. Junction Temperature
Fig.7 Typical Transfer Characteristics
100
4
VGE = 15V
VCE = 10V
90
80
70
60
50
40
30
3
IC = 100A
IC = 50A
IC = 25A
2
1
0
Tj = 175ºC
20
Tj = 25ºC
10
0
25 50 75 100 125 150 175
Junction Temperature : Tj [°C ]
0
2
4
6
8
10 12
Gate To Emitter Voltage : VGE [V]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
6/12
Datasheet
RGW00TS65EHR
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
20
Tj = 175ºC
Tj = 25ºC
IC = 100A
IC = 100A
15
15
IC = 50A
IC = 50A
IC = 25A
IC = 25A
10
10
5
0
5
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Capacitance
vs. Collector to Emitter Voltage
Fig.12 Typical Gate Charge
15
10000
1000
100
10
Cies
10
5
Coes
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
VCC = 400V
IC = 50A
Tj = 25ºC
1
0
0.01
0.1
1
10
100
0
40
80
120
160
Collector To Emitter Voltage : VCE [V]
Gate Charge : Qg [nC]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
7/12
Datasheet
RGW00TS65EHR
lElectrical Characteristic Curves
Fig.13 Typical Switching Time
vs. Collector Current
Fig.14 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
td(off)
100
100
tf
td(on)
td(on)
tf
tr
10
10
tr
VCC = 400V, VGE = 15V,
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 25ºC
IC = 25A, Tj = 25ºC
Inductive load
Inductive load
1
1
0
20
40
60
80
100
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : Rg [Ω]
Fig.15 Typical Switching Energy Losses
Fig.16 Typical Switching Energy Losses
vs. Collector Current
vs. Gate Resistance
10
10
Eon
Eoff
1
1
Eoff
Eon
0.1
0.1
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 25ºC
Inductive load
VCC = 400V, VGE = 15V,
IC = 25A, Tj = 25ºC
Inductive load
0.01
0.01
0
20
40
60
80
100
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : RG [Ω]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
8/12
Datasheet
RGW00TS65EHR
lElectrical Characteristic Curves
Fig.17 Typical Switching Time
vs. Collector Current
Fig.18 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
td(off)
100 tf
100
tf
td(on)
td(on)
10
1
10
tr
tr
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
IC = 25A, Tj = 175ºC
Inductive load
1
0
20
40
60
80
100
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : Rg [Ω]
Fig.19 Typical Switching Energy Losses
Fig.20 Typical Switching Energy Losses
vs. Collector Current
vs. Gate Resistance
10
10
Eoff
1
1
Eoff
Eon
Eon
0.1
0.1
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
IC = 25A, Tj = 175ºC
Inductive load
0.01
0.01
0
20
40
60
80
100
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : RG [Ω]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
9/12
Datasheet
RGW00TS65EHR
lElectrical Characteristic Curves
Fig.21 Typical Diode Forward Current
vs. Forward Voltage
Fig.22 Typical Diode Revese Recovery Time
vs. Forward Current
200
180
160
140
120
400
300
Tj = 175ºC
Tj = 25ºC
100
80
60
40
20
0
200
Tj = 175ºC
100
VCC = 400V
diF/dt = 200A/μs
Inductive load
Tj = 25ºC
0
0
0.5
1
1.5
2
2.5
3
0
20
40
60
80
100
Forward Voltage : VF [V]
Forward Current : IF [A]
Fig.23 Typical Diode Reverse Recovery
Current vs. Forward Current
Fig.24 Typical Diode Rrverse Recovery
Charge vs. Forward Current
20
2.5
VCC = 400V
diF/dt = 200A/μs
Inductive load
Tj = 175ºC
2
15
Tj = 175ºC
1.5
10
1
Tj = 25ºC
5
0.5
VCC = 400V
diF/dt = 200A/μs
Tj = 25ºC
Inductive load
0
0
0
20
40
60
80
100
0
20
40
60
80
100
Forward Current : IF [A]
Forward Current : IF [A]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
10/12
Datasheet
RGW00TS65EHR
lElectrical Characteristic Curves
Fig.25 Typical IGBT Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
PDM
t1
0.01
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
Single Pulse
0.01
0.02
0.05
C1
C2
C3
389.3u 765.9u 1.563m 75.09m 65.80m 228.9m
R1 R2 R3
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
Fig.26 Typical Diode Transient Thermal Impedance
1
D = 0.5
0.2
0.1
0.1
0.01
PDM
Single Pulse
t1
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
R1 R2 R3
0.01
0.02
0.05
C1
C2
C3
483.4u 634.1u 4.584m 64.17m 123.7m 312.1m
0.001
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
11/12
Datasheet
RGW00TS65EHR
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
10%
IC
Fig.27 Inductive Load Circuit
tr
td(on)
td(off)
tf
trr , Qrr
ton
toff
IF
diF/dt
VCE
10%
Irr
VCE(sat)
Eon
Eoff
Fig.29 Diode Reverse Recovery Waveform
Fig.28 Inductive Load Waveform
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© 2021 ROHM Co., Ltd. All rights reserved.
2021.12 - Rev.B
12/12
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2012 ROHM Co., Ltd. All rights reserved.
R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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