RGW50TK65D [ROHM]
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| 型号： | RGW50TK65D |
| 厂家： | 
ROHM |
| 描述： | The datasheet is coming soon. |
| 文件： | 总12页 (文件大小：1323K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RGW50TK65D
650V 25A Field Stop Trench IGBT
Datasheet
lOutline
TO-3PFM
VCES
IC (100°C)
VCE(sat) (Typ.)
PD
650V
18A
1.5V
67W
(1)(2)(3)
lFeatures
lInner Circuit
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
(2)
(3)
(1) Gate
(2) Collector
(3) Emitter
*1
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
5) Pb - free Lead Plating ; RoHS Compliant
(1)
*1 Built in FRD
lApplication
lPackaging Specifications
PFC
Packaging
Tube
UPS
Reel Size (mm)
-
Welding
Solar Inverter
IH
Tape Width (mm)
Type
-
450
Basic Ordering Unit (pcs)
Packing Code
Marking
C11
RGW50TK65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Symbol
VCES
VGES
IC
Value
Unit
V
650
Gate - Emitter Voltage
±30
V
TC = 25°C
30
A
Collector Current
TC = 100°C
IC
18
A
*1
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
100
A
ICP
TC = 25°C
IF
IF
27
A
TC = 100°C
16
100
A
*1
A
IFP
TC = 25°C
PD
PD
Tj
67
W
W
°C
°C
TC = 100°C
33
Operating Junction Temperature
Storage Temperature
-40 to +175
-55 to +175
Tstg
*1 Pulse width limited by Tjmax.
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
1/11
Datasheet
RGW50TK65D
lThermal Resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
2.24
2.79
Rθ(j-c)
Rθ(j-c)
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
-
-
-
-
C/W
C/W
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
650
Max.
-
Collector - Emitter Breakdown
Voltage
BVCES IC = 10μA, VGE = 0V
ICES VCE = 650V, VGE = 0V
IGES VGE = ±30V, VCE = 0V
VGE(th) VCE = 5V, IC = 16.4mA
-
-
Collector Cut - off Current
-
-
10
±200
7.0
μA
nA
V
Gate - Emitter Leakage
Current
-
Gate - Emitter Threshold
Voltage
5.0
6.0
IC = 25A, VGE = 15V,
VCE(sat) Tj = 25°C
Tj = 175°C
Collector - Emitter Saturation
Voltage
-
-
1.5
1.9
-
V
1.85
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
2/11
Datasheet
RGW50TK65D
lIGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
2080
56
Parameter
Symbol
Conditions
Unit
pF
Min.
Max.
Cies VCE = 30V,
Coes VGE = 0V,
Input Capacitance
Output Capacitance
Reverse transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Cres
Qg
f = 1MHz
38
VCE = 400V,
73
Qge IC = 25A,
Qgc VGE = 15V
td(on)
15
nC
28
35
IC = 25A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 25°C
Inductive Load
*Eon include diode
reverse recovery
tr
td(off)
tf
11
ns
mJ
ns
Turn - off Delay Time
Fall Time
102
53
Eon
Eoff
td(on)
tr
Turn - on Switching Loss
Turn - off Switching Loss
Turn - on Delay Time
Rise Time
0.39
0.43
34
IC = 25A, VCC = 400V,
VGE = 15V, RG = 10Ω,
Tj = 175°C
Inductive Load
*Eon include diode
reverse recovery
12
td(off)
tf
Turn - off Delay Time
Fall Time
118
78
Eon
Eoff
Turn - on Switching Loss
Turn - off Switching Loss
0.41
0.60
mJ
-
IC = 100A, VCC = 520V,
VP = 650V, VGE = 15V,
RG = 100Ω, Tj = 175°C
Reverse Bias Safe Operating
Area
RBSOA
FULL SQUARE
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
3/11
Datasheet
RGW50TK65D
lFRD Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Values
Typ.
Parameter
Symbol
Conditions
IF = 20A,
Unit
V
Min.
Max.
VF
Tj = 25°C
Diode Forward Voltage
-
-
1.45
1.55
1.9
-
Tj = 175°C
Diode Reverse Recovery
Time
trr
-
-
-
-
-
-
-
-
92
-
-
-
-
-
-
-
-
ns
A
Diode Peak Reverse
Recovery Current
IF = 20A,
Irr
6.7
VCC = 400V,
diF/dt = 200A/μs,
Tj = 25°C
Diode Reverse Recovery
Charge
Qrr
Err
trr
0.34
14.1
123
7.8
μC
μJ
ns
A
Diode Reverse Recovery
Energy
Diode Reverse Recovery
Time
Diode Peak Reverse
Recovery Current
IF = 20A,
Irr
VCC = 400V,
diF/dt = 200A/μs,
Tj = 175°C
Diode Reverse Recovery
Charge
Qrr
Err
0.59
30.7
μC
μJ
Diode Reverse Recovery
Energy
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
4/11
Datasheet
RGW50TK65D
lElectrical Characteristic Curves
Fig.1 Power Dissipation
vs. Case Temperature
80
Fig.2 Collector Current
vs. Case Temperature
40
30
20
10
0
60
40
20
0
Tj ≤ 175ºC
VGE ≥ 15V
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
0
25 50 75 100 125 150 175
Case Temperature : TC [°C ]
Fig.3 Forward Bias Safe Operating Area
1000
Fig.4 Reverse Bias Safe Operating Area
120
1μs
100
80
100
10μs
10
1
100μs
60
40
0.1
0.01
20
Tj ≤ 175ºC
VGE = 15V
TC = 25ºC
Single Pulse
0
0
200
400
600
800
1
10
100
1000
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
5/11
Datasheet
RGW50TK65D
lElectrical Characteristic Curves
Fig.5 Typical Output Characteristics
Fig.6 Typical Output Characteristics
100
100
Tｊ = 25ºC
VGE = 15V
Tｊ = 175ºC
VGE = 20V
VGE = 20V
80
80
VGE = 12V
VGE = 10V
VGE = 15V
60
60
40
20
0
VGE = 10V
VGE = 12V
40
VGE = 8V
VGE = 8V
20
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector To Emitter Voltage : VCE [V]
Collector To Emitter Voltage : VCE [V]
Fig.8 Typical Collector to Emitter Saturation
Voltage vs. Junction Temperature
Fig.7 Typical Transfer Characteristics
4
50
VGE = 15V
VCE = 10V
40
30
20
10
3
IC = 50A
2
IC = 25A
IC = 12.5A
1
Tj = 175ºC
Tj = 25ºC
0
0
25 50 75 100 125 150 175
0
2
4
6
8
10 12
Gate To Emitter Voltage : VGE [V]
Junction Temperature : Tj [°C ]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
6/11
Datasheet
RGW50TK65D
lElectrical Characteristic Curves
Fig.9 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
Fig.10 Typical Collector to Emitter Saturation
Voltage vs. Gate to Emitter Voltage
20
20
Tj = 175ºC
Tj = 25ºC
IC = 50A
IC = 50A
15
15
IC = 25A
IC = 25A
IC = 12.5A
IC = 12.5A
10
10
5
0
5
0
5
10
15
20
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
1000
td(off)
tf
td(off)
100
10
1
100
tf
td(on)
td(on)
10
tr
tr
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
Inductive load
VCC = 400V, VGE = 15V,
IC = 25A, Tj = 175ºC
Inductive load
1
0
10
20
30
40
50
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : RG [Ω]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
7/11
Datasheet
RGW50TK65D
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Fig.14 Typocal Switching Energy Losses
vs. Gate Resistance
10
10
1
1
Eoff
Eoff
Eon
0.1
0.1
0.01
Eon
VCC = 400V, VGE = 15V,
RG = 10Ω, Tj = 175ºC
VCC = 400V, IC = 25A,
VGE = 15V, Tj = 175ºC
Inductive load
Inductive load
0.01
0
10
20
30
40
50
0
10
20
30
40
50
Collecter Current : IC [A]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector to Emitter Voltage
Fig.16 Typical Gate Charge
15
10000
1000
100
10
Cies
10
5
Coes
Cres
f = 1MHz
VGE = 0V
Tj = 25ºC
VCC = 400V
IC = 25A
Tj = 25ºC
1
0
0.01
0.1
1
10
100
0 10 20 30 40 50 60 70 80
Gate Charge : Qg [nC]
Collector To Emitter Voltage : VCE [V]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
8/11
Datasheet
RGW50TK65D
lElectrical Characteristic Curves
Fig.17 Typical Diode Forward Current
vs. Forward Voltage
Fig.18 Typical Diode Revese Recovery Time
vs. Forward Current
100
200
80
150
Tj = 175ºC
60
100
40
Tj = 25ºC
Tj = 25ºC
Tj = 175ºC
50
20
VCC = 400V
diF/dt = 200A/μs
Inductive load
0
0
0
0.5
1
1.5
2
2.5
3
0
10
20
30
40
50
Forward Voltage : VF [V]
Forward Current : IF [A]
Fig.19 Typical Diode Reverse Recovery
Current vs. Forward Current
Fig.20 Typical Diode Rrverse Recovery
Charge vs. Forward Current
15
1.5
VCC = 400V
diF/dt = 200A/μs
Inductive load
10
1
Tj = 175ºC
Tj = 175ºC
5
0.5
Tj = 25ºC
VCC = 400V
diF/dt = 200A/μs
Inductive load
0
Tj = 25ºC
0
0
10
20
30
40
50
0
10
20
30
40
50
Forward Current : IF [A]
Forward Current : IF [A]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
9/11
Datasheet
RGW50TK65D
lElectrical Characteristic Curves
Fig.21 Typical IGBT Transient Thermal Impedance
1E+1
D = 0.5
0.2
0.1
1E+0
1E-1
PDM
t1
Single Pulse
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
1E-2
0.01
0.02
C1
C2
C3
556.1u 7.152m 176.6m 402.5m 435.2m 481.1m
R1 R2 R3
0.05
1E-3
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
Fig.22 Typical Diode Transient Thermal Impedance
1E+1
D = 0.5
0.2
1E+0
1E-1
PDM
0.1
t1
0.05
t2
Duty = t1/t2
Peak Tj = PDM×Zθ(j-c)+TC
0.02
1E-2
0.01
C1
C2
C3
221.3u 1.179m 25.34m 360.3m 687.0m 592.7m
R1 R2 R3
Single Pulse
1E-3
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Pulse Width : t1 [s]
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
10/11
Datasheet
RGW50TK65D
●Inductive Load Switching Circuit and Waveform
Gate Drive Time
90%
D.U.T.
VGE
D.U.T.
10%
VG
90%
10%
IC
Fig.23 Inductive Load Circuit
tr
tf
td(on)
td(off)
trr , Qrr
ton
toff
IF
diF/dt
VCE
10%
Irr
VCE(sat)
Eon
Eoff
Fig.25 Diode Reverse Recovery Waveform
Fig.24 Inductive Load Waveform
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© 2020 ROHM Co., Ltd. All rights reserved.
2020.11 - Rev.A
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
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R1102
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