RGW60TK65D [ROHM]

RGW60TK65D是以高速开关为特点的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。;


型号：	RGW60TK65D
厂家：	ROHM
描述：	RGW60TK65D是以高速开关为特点的IGBT。适合PFC、太阳能变频器、UPS、焊接、IH等用途。开关双极性晶体管功率因数校正
文件：	总12页 (文件大小：1775K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RGW60TK65D

Datasheet

650V 30A Field Stop Trench IGBT

Outline

TO-3PFM

V_CES

I_{C (100℃)}

V_{CE(sat) (Typ.)}

P_D

650V

20A

1.5V@I_C=30A

72W

(1)(2)(3)

Features

Inner Circuit

1) Low Collector - Emitter Saturation Voltage

2) High Speed Switching

(2)

(1) Gate

(2) Collector

(3) Emitter

3) Low Switching Loss & Soft Switching

4) Built in Very Fast & Soft Recovery FRD

5) Pb - free Lead Plating ; RoHS Compliant

(1)

*1 Built in FRD

(3)

Applications

Packaging Specifications

PFC

Packaging

Tube

UPS

Reel Size (mm)

Welding

Solar Inverter

Tape Width (mm)

Type

450

Basic Ordering Unit (pcs)

Packing Code

Marking

C11

RGW60TK65D

Absolute Maximum Ratings (at T_C= 25°C unless otherwise specified)

Parameter

Collector - Emitter Voltage

Symbol

V_CES

V_GES

I_C

Value

Unit

650

Gate - Emitter Voltage

30

T_C= 25°C

Collector Current

T_C= 100°C

I_C

Pulsed Collector Current

Diode Forward Current

Diode Pulsed Forward Current

Power Dissipation

120

I_CP

T_C= 25°C

I_F

T_C= 100°C

120

I_FP

T_C= 25°C

P_D

T_j

°C

T_C= 100°C

Operating Junction Temperature

Storage Temperature

40 to +175

55 to +175

T_stg

*1 Pulse width limited by T_jmax

www.rohm.com

2017.10 - Rev.A

1/11

Datasheet

RGW60TK65D

Thermal Resistance

Values

Parameter

Symbol

Unit

Min.

Typ.

Max.

2.07

2.79

R_θ(j-c)

Thermal Resistance IGBT Junction - Case

Thermal Resistance Diode Junction - Case

°C/W

IGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

650

Max.

Collector - Emitter Breakdown

Voltage

BV_CESI_C= 10μA, V_GE= 0V

I_CES

V_CE= 650V, V_GE= 0V

Collector Cut - off Current

200

7.0

μA

I_GES

V_GE= 30V, V_CE= 0V

Gate - Emitter Leakage Current

Gate - Emitter Threshold

Voltage

V_GE(th)V_CE= 5V, I_C= 20.0mA

5.0

6.0

I_C= 30A, V_GE= 15V

V_CE(sat)T_j= 25°C

T_j= 175°C

Collector - Emitter Saturation

Voltage

1.5

1.9

1.85

www.rohm.com

2017.10 - Rev.A

2/11

Datasheet

RGW60TK65D

IGBT Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

2530

Parameter

Symbol

Conditions

Unit

Min.

Max.

C_ies

C_oes

C_res

Q_g

_CE= 30V

_GE= 0V

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate - Emitter Charge

Gate - Collector Charge

Turn - on Delay Time

Rise Time

f = 1MHz

V_CE= 400V

Q_ge

Q_gc

t_d(on)

t_r

I_C= 30A

V_GE= 15V

I_C= 30A, V_CC= 400V

V_GE= 15V, R_G= 10Ω

T_j= 25°C

t_d(off)

t_f

Turn - off Delay Time

Fall Time

114

Inductive Load

E_on

E_off

t_d(on)

t_r

*E_onincludes diode

reverse recovery

I_C= 30A, V_CC= 400V

V_GE= 15V, R_G= 10Ω

T_j= 175°C

Turn - on Switching Loss

Turn - off Switching Loss

Turn - on Delay Time

Rise Time

0.48

0.49

t_d(off)

t_f

Turn - off Delay Time

Fall Time

133

Inductive Load

E_on

E_off

*E_onincludes diode

reverse recovery

I_C= 120A, V_CC= 520V

V_P= 650V, V_GE= 15V

R_G= 100Ω, T_j= 175°C

Turn - on Switching Loss

Turn - off Switching Loss

0.49

0.63

Reverse Bias Safe Operating

Area

RBSOA

FULL SQUARE

www.rohm.com

2017.10 - Rev.A

3/11

Datasheet

RGW60TK65D

FRD Electrical Characteristics (at T_j= 25°C unless otherwise specified)

Values

Typ.

Parameter

Symbol

Conditions

Unit

Min.

Max.

I_F= 20A

V_F

T_j= 25°C

Diode Forward Voltage

Diode Reverse Recovery Time

1.45

1.55

1.9

T_j= 175°C

t_rr

I_F= 20A

Diode Peak Reverse Recovery

Current

I_rr

6.7

V_CC= 400V

di_F/dt = 200A/μs

T_j= 25°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

t_rr

0.34

14.1

123

7.8

μC

μJ

Diode Reverse Recovery Energy

Diode Reverse Recovery Time

I_F= 20A

Diode Peak Reverse Recovery

Current

I_rr

V_CC= 400V

di_F/dt = 200A/μs

T_j= 175°C

Diode Reverse Recovery

Charge

Q_rr

E_rr

0.59

30.7

μC

μJ

Diode Reverse Recovery Energy

www.rohm.com

2017.10 - Rev.A

4/11

Datasheet

RGW60TK65D

Electrical Characteristic Curves

Fig.1 Power Dissipation vs. Case Temperature

Fig.2 Collector Current vs. Case Temperature

T_j≦175ºC

_GE≧15V

75 100 125 150 175

Case Temperature : T_C[ºC]

Fig.3 Forward Bias Safe Operating Area

Fig.4 Reverse Bias Safe Operating Area

160

140

120

100

1000

1µs

100

10µs

100µs

0.1

0.01

T_j≦175ºC

T_c=25ºC

Single Pulse

_GE≧15V

200

400

600

800

100

1000

Collector To Emitter Voltage : V_CE[V]

www.rohm.com

2017.10 - Rev.A

5/11

Datasheet

RGW60TK65D

Electrical Characteristic Curves

Fig.5 Typical Output Characteristics

Fig.6 Typical Output Characteristics

120

100

120

100

T_j=175ºC

V_GE=20V

T_j=25ºC

V_GE=20V

V_GE=15V

V_GE=12V

V_GE=10V

V_GE=15V

V_GE=10V

V_GE=8V

Collector To Emitter Voltage : V_CE[V]

Fig.7 Typical Transfer Characteristics

Fig.8 Typical Collector To Emitter Saturation

Voltage vs. Junction Temperature

V_CE=10V

V_GE=15V

I_C=60A

I_C=30A

I_C=15A

T_j=175ºC

T_j=25ºC

100

125

150

175

Gate to Emitter Voltage : V_GE[V]

Junction Temperature : T_j[ºC]

www.rohm.com

2017.10 - Rev.A

6/11

Datasheet

RGW60TK65D

Electrical Characteristic Curves

Fig.9 Typical Collector To Emitter Saturation

Fig.10 Typical Collector To Emitter Saturation

Voltage vs. Gate To Emitter Voltage

T_j=25ºC

T_j=175ºC

I_C=60A

I_C=30A

I_C=15A

Gate to Emitter Voltage : V_GE[V]

Fig.11 Typical Switching Time vs.

Collector Current

Fig.12 Typical Switching Time

vs. Gate Resistance

1000

100

1000

t_f

t_d(off)

t_f

100

t_d(off)

t_d(on)

t_r

V_CC=400V, V_GE=15V

R_G=10Ω, T_j=175ºC

Inductive load

V_CC=400V, I_C=30A

V_GE=15V, T_j=175ºC

Inductive load

Collector Current : I_C[A]

Gate Resistance : R_G[Ω]

www.rohm.com

2017.10 - Rev.A

7/11

Datasheet

RGW60TK65D

Electrical Characteristic Curves

Fig.14 Typical Switching Energy Losses vs.

Gate Resistance

Fig.13 Typical Switching Energy Losses vs.

Collector Current

E_off

E_on

0.1

V_CC=400V, I_C=30A

V_CC=400V, V_GE=15V

R_G=10Ω, T_j=175ºC

Inductive load

V_GE=15V, T_j=175ºC

Inductive load

0.01

Gate Resistance : R_G[Ω]

Collector Current : I_C[A]

Fig.15 Typical Capacitance vs.

Fig.16 Typical Gate Charge

Collector To Emitter Voltage

10000

1000

100

Cies

Coes

Cres

V_CC=400V

I_C=30A

T_j=25ºC

f=1MHz

V_GE=0V

T_j=25ºC

100

0.01

0.1

100

Collector To Emitter Voltage : V_CE[V]

Gate Charge : Q_g[nC]

www.rohm.com

2017.10 - Rev.A

8/11

Datasheet

RGW60TK65D

Electrical Characteristic Curves

Fig.18 Typical Diode Reverse Recovery Time

Fig.17 Typical Diode Forward Current vs.

vs. Forward Current

Forward Voltage

120

400

300

200

100

T_j=25ºC

T_j=175ºC

T_j=25ºC

T_j=175ºC

V_CC=400V

di_F/dt=200A/μs

Inductive load

Forward Current : I_F[A]

Forward Voltage : V_F[V]

Fig.19 Typical Diode Reverse Recovery

Current vs. Forward Current

Fig.20 Typical Diode Reverse

Recovery Charge

2.5

V_CC=400V

di_F/dt=200A/μs

Inductive load

1.5

T_j=175ºC

0.5

V_CC=400V

di_F/dt=200A/μs

Inductive load

T_j=25ºC

Forward Current : I_F[A]

www.rohm.com

2017.10 - Rev.A

9/11

Datasheet

RGW60TK65D

Electrical Characteristic Curves

Fig.21 Typical IGBT Transient Thermal Impedance

D= 0.5

0.1

0.2

0.1

P_DM

Single Pulse

0.01

0.001

0.01

Duty=t1/t2

Peak T_j=P_DM×Z_thJCT_C

0.02

0.05

441.0u 3.238m 102.0m 274.8m 429.5m 515.7m

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t1[s]

Fig.22 Typical Diode Transient Thermal Impedance

0.2

0.1

D= 0.5

0.1

P_DM

Single Pulse

0.01

Duty=t1/t2

Peak T_j=P_DM×Z_thJCT_C

0.02

0.05

221.3u 1.179m 25.34m 360.3m 687.0m 592.7m

0.001

1E-6

1E-5

1E-4

1E-3

1E-2

1E-1

1E+0

Pulse Width : t1[s]

www.rohm.com

2017.10 - Rev.A

10/11

Datasheet

RGW60TK65D

Inductive Load Switching Circuit and Waveform

Gate Drive Time

90%

D.U.T.

V_GE

10%

90%

10%

I_C

Fig.23 Inductive Load Circuit

t_d(off)

t_f

t_d(on)

t_r

t_on

t_off

t_{rr ,}Q_rr

I_F

V_CE

di_F/dt

10%

V_CE(sat)

I_rr

Fig.25 Diode Reverce Recovery Waveform

E_on

E_off

Fig.24 Inductive Load Waveform

www.rohm.com

2017.10 - Rev.A

11/11

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1107

RGW60TK65D [ROHM]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E