RP1E090XNTR [ROHM]
Power Field-Effect Transistor, 9A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN;型号: | RP1E090XNTR |
厂家: | ROHM |
描述: | Power Field-Effect Transistor, 9A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT6, 6 PIN 开关 脉冲 光电二极管 晶体管 |
文件: | 总7页 (文件大小:1066K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Data Sheet
4V Drive Nch MOSFET
RP1E090XN
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
MPT6
(Single)
(6)
(1)
(5)
(2)
(4)
(3)
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Application
Switching
Packaging specifications
Inner circuit
(6)
(5)
(4)
Package
Taping
TR
Type
Code
Basic ordering unit (pieces)
1000
RP1E090XN
∗2
(1) Source
(2) Source
(3) Gate
∗1
Absolute maximum ratings (Ta = 25C)
Parameter
(4) Drain
(5) Drain
(6) Drain
(1)
(2)
(3)
Symbol
VDSS
VGSS
ID
Limits
Unit
V
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Drain-source voltage
30
20
Gate-source voltage
V
Continuous
9
A
Drain current
Pulsed
*1
IDP
36
A
Continuous
Pulsed
IS
1.6
A
Source current
(Body Diode)
*1
*2
ISP
36
A
Power dissipation
PD
2.0
W
C
C
Channel temperature
Tch
Tstg
150
Range of storage temperature
*1 Pw10s, Duty cycle1%
55 to 150
*2 Mounted on a ceramic board.
Thermal resistance
Parameter
Symbol
Rth (ch-a)*
Limits
62.5
Unit
Channel to Ambient
*Mounted on a ceramic board.
C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.02 - Rev.A
1/6
Data Sheet
RP1E090XN
ꢀ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A VGS=20V, VDS=0V
ID=1mA, VGS=0V
A VDS=30V, VGS=0V
Conditions
Gate-source leakage
-
10
Drain-source breakdown voltage V(BR)DSS
30
-
-
1
2.5
17
24
27
-
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
-
VGS (th)
1.0
-
V
VDS=10V, ID=1mA
ID=9A, VGS=10V
ID=9A, VGS=4.5V
ID=9A, VGS=4.0V
ID=9A, VDS=10V
-
12
17
19
-
Static drain-source on-state
resistance
*
RDS (on)
m
S
-
-
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
5.0
Ciss
Coss
Crss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
440
170
85
8
-
pF VDS=10V
pF VGS=0V
-
-
pF f=1MHz
-
ns ID=4.5A, VDD 15V
ns VGS=10V
ns RL=3.32
ns RG=10
nC ID=9A, VDD 15V
nC VGS=5V
*
*
*
*
*
*
*
30
30
8
-
Turn-off delay time
Fall time
td(off)
tf
-
-
Total gate charge
Gate-source charge
Gate-drain charge
Qg
6.8
1.6
2.6
-
Qgs
Qgd
-
-
nC
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
*
VSD
Is=9A, VGS=0V
*Pulsed
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2/6
2011.02 - Rev.A
Data Sheet
RP1E090XN
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics(Ⅰ)
Fig.2 Typical Output Characteristics(Ⅱ)
9
9
8
7
6
5
4
3
2
1
0
Ta=25°C
Pulsed
VGS= 2.8V
Ta=25°C
8
Pulsed
VGS= 2.8V
7
6
VGS= 10V
VGS= 4.5V
VGS= 4.0V
VGS= 10V
VGS= 4.5V
VGS= 4.0V
5
4
3
VGS= 2.5V
2
1
0
VGS= 2.5V
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.4 Static Drain-Source On-State
Fig.3 Typical Transfer Characteristics
Resistance vs. Drain Current(Ⅰ)
10
1
1000
VDS= 10V
Pulsed
Ta=25°C
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
1
0.1
0.01
0.001
VGS= 4.0V
VGS= 4.5V
VGS= 10V
0.1
1
10
0
1
2
3
GATE-SOURCE VOLTAGE : VGS[V]
DRAIN-CURRENT : ID[A]
Fig.5 Static Drain-Source On-State
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Resistance vs. Drain Current(Ⅲ)
1000
100
10
1000
100
10
VGS= 10V
Pulsed
VGS= 4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
1
0.1
1
10
0.1
1
10
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
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3/6
2011.02 - Rev.A
Data Sheet
RP1E090XN
ꢀ
Fig.7 Static Drain-Source On-State
Fig.8 Forward Transfer Admittance
vs. Drain Current
Resistance vs. Drain Current(Ⅳ)
1000
100
10
1
VDS= 10V
Pulsed
VGS= 4.0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.1
1
10
0.01
0.1
1
10
10
14
DRAIN-CURRENT : ID[A]
DRAIN-CURRENT : ID[A]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
50
40
30
20
10
0
10
VGS=0V
Pulsed
Ta=25°C
Pulsed
ID= 4.5A
ID= 9.0A
1
Ta=125°C
0.1
0.01
Ta=75°C
Ta=25°C
Ta=-25°C
0
0.5
1
1.5
0
2
4
6
8
GATE-SOURCE VOLTAGE : VGS[V]
SOURCE-DRAIN VOLTAGE : VSD [V]
Fig.11 Switching Characteristics
Ta=25°C
Fig.12 Dynamic Input Characteristics
10
8
1000
100
10
td(off)
VDD= 15V
VGS=10V
RG=10W
Pulsed
tf
6
td(on)
4
Ta=25°C
VDD= 15V
ID= 9A
Pulsed
2
tr
1
0
0.01
0.1
1
10
0
2
4
6
8
10
12
TOTAL GATE CHARGE : Qg [nC]
DRAIN-CURRENT : ID[A]
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© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.02 - Rev.A
Data Sheet
RP1E090XN
ꢀ
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.14 Maximum Safe Operating Aera
10000
1000
1000
100
10
Operation in this area is limited by RDS(ON)
(VGS=10V)
Ciss
PW=100us
Crss
PW=1ms
1
100
PW = 10ms
Coss
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
0.1
0.01
Ta=25°C
f=1MHz
VGS=0V
DC operation
10
0.01
0.1
1
10
100
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : VDS[V]
DRAIN-SOURCE VOLTAGE : VDS[V]
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=62.5°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
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5/6
2011.02 - Rev.A
Data Sheet
RP1E090XN
ꢀ
Measurement circuits
Pulse width
90%
VGS
ID
VDS
50%
10%
50%
V
GS
DS
R
L
V
10%
10%
90%
D.U.T.
V
DD
RG
90%
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2ꢀSwitching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
V
GS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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6/6
2011.02 - Rev.A
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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