RQ5E025AT [ROHM]
RQ5E025AT是低导通电阻、小型表面安装封装的MOSFET。;
| 型号： | RQ5E025AT |
| 厂家： | 
ROHM |
| 描述： | RQ5E025AT是低导通电阻、小型表面安装封装的MOSFET。 |
| 文件： | 总12页 (文件大小：1289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RQ5E025AT
ꢀꢀPch -30V -2.5A Middle Power MOSFET
Datasheet
ꢀꢀ
llOutline
TSMT3
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
VDSS
-30V
91mΩ
±2.5A
1W
ꢀ
RDS(on)(Max.)
ꢀ
ꢀ
ID
ꢀ
ꢀ
PD
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llInner circuit
llFeatures
1) Low on - resistance.
2) Small Surface Mount Package (TSMT3).
3) Pb-free lead plating ; RoHS compliant
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
llApplication
Tape width (mm)
Type
Switching
Basic ordering unit (pcs)
Taping code
3000
TCL
JS
Marking
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
-30
Unit
V
VDSS
ID
Drain - Source voltage
Continuous drain current
Pulsed drain current
±2.5
±12
A
*2
ID,pulse
VGSS
A
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
±20
V
*3
EAS
4.5
mJ
A
*3
IAS
-2.5
*4
PD
Power dissipation
1
W
℃
℃
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
ꢀ ꢀ
1/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
ꢀ
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
llThermal resistance
Values
Unit
Parameter
Symbol
Min.
-
Typ. Max.
*4
RthJA
Thermal resistance, junction - ambient
125
-
℃/W
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
V
Min.
-30
Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
GS
= 0V, I = -1mA
D
-
-
ΔV
I = -1mA
ꢀ
ꢀ
(BR)DSS
D
Breakdown voltage
-
-
-22
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
DS
= -30V, V = 0V
-1
μA
GS
IGSS
VGS(th)
ΔV
V
V
= ±20V, V = 0V
Gate - Source leakage current
Gate threshold voltage
-
-
-
±100
-2.5
nA
V
GS
DS
= V , I = -1mA
-1.0
DS
GS
D
I = -1mA
D
ꢀ
ꢀ
GS(th)
Gate threshold voltage
temperature coefficient
-
2.9
-
mV/℃
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
GS
V
GS
V
DS
= -10V, I = -2.5A
-
-
70
104
-
91
135
-
D
Static drain - source
on - state resistance
*5
RDS(on)
mΩ
S
= -4.5V, I = -2.5A
D
*5
gfs
= -5V, I = -2.5A
Transconductance
2.1
D
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 L ⋍ 1mH, V = -15V, R = 25Ω, STARTING T = 25℃ Fig.3-1,3-2
DD
G
ch
*4 Mounted on a ceramic boad (30×30×0.8mm)
*5 Pulsed
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀꢀ ꢀ ꢀ ꢀ ꢀꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
2/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
220
45
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= -15V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
35
*5
V
DD
⋍ -15V,V = -10V
GS
td(on)
6.5
8.5
22
tr*5
I = -1.25A
D
ns
*5
td(off)
R = 12Ω
Turn - off delay time
Fall time
L
tf*5
R = 10Ω
5.5
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
5.4
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
V
= -10V
= -4.5V
-
-
-
-
-
-
-
-
GS
GS
*5
Qg
Total gate charge
2.7
V
⋍ -15V
I = -2.5A
DD
*5
V
Qgs
Gate - Source charge
Gate - Drain charge
0.8
D
*5
Qgd
1.0
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
-
Max.
-0.8
Body diode continuous
forward current
*1
IS
-
T = 25℃
A
V
a
Body diode
pulse current
*2
ISP
-
-
-
-
-12
*5
VSD
Forward voltage
V
GS
= 0V, I = -0.8A
-1.2
S
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
3/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
ꢀꢀꢀꢀꢀꢀꢀResistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
4/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
5/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Transconductance vs. Drain Current
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
6/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
7/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
llElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
8/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
llElectrical characteristic curves
Fig.17 Typical Capacitance vs. Drain -
Fig.18 Switching Characteristics
ꢀSource Voltage
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
ꢀVoltage
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
9/11
20141208 - Rev.001
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
RQ5E025AT
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
10/11
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
20141208 - Rev.001
RQ5E025AT
ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ
Datasheet
llDimensions
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
11/11
20141208 - Rev.001
相关型号：
RQ5E030AJTCL
Small Signal Field-Effect Transistor, 3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSMT3, SC-96, 3 PIN
ROHM
RQ5E040AJTCL
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSMT3, SC-96, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明