RQ5E040AJ [ROHM]
RQ5E040AJ是适用于开关用途的中功率MOSFET。;
| 型号： | RQ5E040AJ |
| 厂家： | 
ROHM |
| 描述： | RQ5E040AJ是适用于开关用途的中功率MOSFET。 开关 |
| 文件： | 总12页 (文件大小：1341K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RQ5E040AJ
ꢀꢀNch 30V 4A Middle Power MOSFET
Datasheet
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llOutline
TSMT3
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VDSS
30V
37mΩ
±4.0A
1W
ꢀ
RDS(on)(Max.)
ꢀ
ID
(SC-96)
ꢀ
PD
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llInner circuit
llFeatures
1) Low on - resistance.
2) High Power Package (TSMT3).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
llApplication
Tape width (mm)
Type
Switching
Basic ordering unit (pcs)
Taping code
3000
TCL
FK
Marking
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
30
Unit
V
VDSS
ID
Drain - Source voltage
Continuous drain current
Pulsed drain current
±4.0
±16
A
*1
ID,pulse
VGSS
A
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
±12
V
*2
EAS
1.2
mJ
A
*2
IAS
4.0
*3
PD
Power dissipation
1
W
℃
℃
Tj
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
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1/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
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llThermal resistance
Values
Unit
Parameter
Symbol
Min.
-
Typ. Max.
*3
RthJA
Thermal resistance, junction - ambient
-
125 ℃/W
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
V
Min.
30
Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
GS
= 0V, I = 1mA
D
-
-
ΔV
I = 1mA
ꢀ
ꢀ
(BR)DSS
D
Breakdown voltage
-
-
18
-
-
mV/℃
temperature coefficient
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
DS
= 30V, V = 0V
1
μA
GS
IGSS
VGS(th)
ΔV
V
V
= ±12V, V = 0V
Gate - Source leakage current
Gate threshold voltage
-
-
-
±100
1.5
nA
V
GS
DS
= V , I = 1mA
0.5
DS
GS
D
I = 1mA
D
ꢀ
ꢀ
GS(th)
Gate threshold voltage
temperature coefficient
-
-2.0
-
mV/℃
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
= 4.5V, I = 4.0A
-
-
-
27
39
37
54
-
GS
GS
D
Static drain - source
on - state resistance
*4
RDS(on)
RG
|Y |*4
mΩ
Ω
V
= 2.5V, I = 4.0A
D
Gate input resistance
f=1MHz, open drain
2.5
Forward Transfer
Admittance
V
DS
= 5V, I = 4A
4.2
-
-
S
fs
D
*1 Pw≦10μs , Duty cycle≦1%
*2 L ⋍ 0.1mH, V = 15V, R = 25Ω, STARTING T = 25℃ Fig.3-1,3-2
DD
G
ch
*3 Mounted on a ceramic boad (30×30×0.8mm)
*4 Pulsed
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Input capacitance
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ.
480
55
Max.
Ciss
Coss
Crss
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= 15V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
40
*4
td(on)
V
⋍ 15V,V = 4.5V
DD GS
8.8
5.9
26
tr*4
I = 2.0A
D
ns
*4
td(off)
R ⋍ 7.5Ω
Turn - off delay time
Fall time
L
tf*4
R = 10Ω
5.7
G
llGate charge characteristics (Ta = 25°C)
Values
Typ.
4.3
Parameter
Symbol
Conditions
Unit
nC
Min.
Max.
*4
Qg
Total gate charge
-
-
-
-
-
-
V
⋍ 15V,
I = 4.0A,
DD
*4
Qgs
Gate - Source charge
Gate - Drain charge
1.1
D
V
GS
= 4.5V
*4
Qgd
1.1
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
IS
Conditions
Unit
A
Min.
-
Max.
0.8
Body diode continuous
forward current
-
T = 25℃
a
Body diode
pulse current
*1
ISP
-
-
-
-
16
A
V
*4
VSD
V
GS
= 0V, I = 0.8A
S
Forward voltage
1.2
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
ꢀꢀꢀꢀꢀꢀꢀResistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Tranceconductance ꢀvs. Drain
Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
7/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
llElectrical characteristic curves
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
8/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
llElectrical characteristic curves
Fig.17 Typical Capacitance vs. Drain -
Fig.18 Switching Characteristics
ꢀSource Voltage
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
9/11
20150316 - Rev.001
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RQ5E040AJ
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
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llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
10/11
20150316 - Rev.001
RQ5E040AJ
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Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
11/11
20150316 - Rev.001
相关型号：
RQ5E040AJTCL
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSMT3, SC-96, 3 PIN
ROHM
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