RRE02VS4S [ROHM]
Rectifier Diode; 整流器器二极管
| 型号： | RRE02VS4S |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode |
| 文件： | 总5页 (文件大小：1123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
Rectifier Diode
RRE02VS4S
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
General Rectification
1.1
0.17±0.1
ꢀꢀ 0.05
1.3±0.05
Features
1)Low VF
2)Small mold type. (TUMD2S)
TUMD2S
Structure
Construction
Silicon epitaxial planer
0.8±0.05
0.6±0.2
ꢀꢀꢀ 0.1
ROHM : TUMD2S
dot (year week factory) + day
Taping dimensions (Unit : mm)
φ1.55±0.1
ꢀꢀꢀꢀꢀ 0
0.25±0.05
2.0±0.05
4.0±0.1
4.0±0.1
φ1.0±0.2
ꢀꢀꢀꢀꢀ0
1.43±0.05
0.9±0.08
Absolute maximum ratings (Tc=25°C)
Parameter
Repetitive peak Reverse voltage
Reverse voltage
Conditions
D≤0.5
Symbol
VRM
Limits
Unit
V
400
400
VR
Direct voltage
V
Glass epoxy substrate mounted
R-road, 60Hz half sin wave
60Hz half sin wave, Non-repetitive
one cycle peak value, Tj=25°C
Average rectified forward current
Forward current surge peak
Io
0.2
A
A
IFSM
1
Junction temperature
Storage temperature
Tj
150
°C
°C
-
+
Tstg
55 to 150
Electrical characteristics (Tj=25°C)
Parameter
Forward voltage
Conditions
IF=0.2A
Symbol
Min.
－
Typ.
0.95
0.01
Max.
1.1
1
Unit
V
VF
IR
VR=400V
Reverse current
－
μA
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.09 - Rev.A
1/4
Data Sheet
RRE02VS4S
ꢀ
1000
100
10
1
Tj=150°C
0.1
Tj=150°C
Tj=125°C
Tj=75°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=75°C
0.01
1
0.1
0.001
0
100
200
300
400
0
0.5
1
1.5
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
FORWARD VOLTAGE：VF(V)
VF-IF CHARACTERISTICS
1000
995
990
985
980
975
970
965
960
955
950
10
f=1MHz
Tj=25°C
IF=0.2A
n=20pcs
1
AVE:962mV
0.1
0
10
20
30
VF DISPERSION MAP
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
10
Tj=25°C
f=1MHz
VR=0V
Tj=25°C
VR=400V
n=20pcs
n=10pcs
1
AVE:3.39pF
AVE:0.9nA
0.1
Ct DISPERSION MAP
IR DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.09 - Rev.A
Data Sheet
RRE02VS4S
ꢀ
10
9
8
7
6
5
4
3
2
1
0
10
1cyc
IFSM
IFSM
8.3ms 8.3ms
1cyc
8.3ms
1
AVE:3.95A
0.1
1
10
100
IFSM DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
IFSM
t
1
AVE:6.84kV
AVE:4.58kV
C=200pF
C=100pF
0.1
1
R=0Ω
R=1.5kΩ
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
ESD DISPERSION MAP
0.4
0.35
0.3
1000
100
10
D.C.
Rth(j-a)
On glass-epoxy substrate
soldering land 6mm□
D=0.8
D=0.5
half sin wave
0.25
0.2
Rth(j-l)
0.15
0.1
0.05
0
1
0.001
0.01
0.1
1
10
100
1000
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
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© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.09 - Rev.A
Data Sheet
RRE02VS4S
ꢀ
Io
0A
0V
Io
0A
0V
VR
0.4
0.35
0.3
0.4
t
VR
D=t/T
t
VR=200V
0.35
D.C.
D=t/T
Tj=150°C
T
VR=200V
Tj=150°C
D.C.
T
0.3
D=0.8
On glass-epoxy
D=0.8
substrate soldering land
0.25
0.2
0.25
D=0.5
D=0.5
0.2
half sin wave
half sin wave
0.15
0.1
0.15
0.1
0.05
0
0.05
0
0
30
60
90
120
150
0
30
60
90
120
150
CASE TEMPERATURE:Tl(°C)
DERATING CURVE (Io-Tl)
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE (Io-Ta)
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.09 - Rev.A
Notice
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