RRL035P03FRA [ROHM]
RRL035P03FRA是适合DC/DC转化器用途的车载型高可靠性MOSFET。;
| 型号： | RRL035P03FRA |
| 厂家： | 
ROHM |
| 描述： | RRL035P03FRA是适合DC/DC转化器用途的车载型高可靠性MOSFET。 |
| 文件： | 总13页 (文件大小：747K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RRL035P03
FRA
Pch -30V -3.5A Power MOSFET
Datasheet
ꢀOutline
(6)
VDSS
RDS(on) (Max.)
ꢀ30V
50mꢃ
ꢀ3.5A
1.0W
(5)
TUMT6
(4)
ID
PD
(1)
(2)
(3)
ꢀFeatures
1) Low on - resistance.
ꢀInner circuit
(1) Drain
(2) Drain
(3) Gate
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TUMT6).
4) Pb-free lead plating ; RoHS compliant
5) AEC-Q101 Qualified
(4) Source
(5) Drain
(6) Drain
ꢄ1 ESD PROTECTION DIODE
ꢄ2 BODY DIODE
ꢀPackaging specifications
Packaging
Taping
180
8
Reel size (mm)
ꢀApplication
Tape width (mm)
Type
DC/DC converters
Basic ordering unit (pcs)
3,000
TR
Taping code
Marking
UF
ꢀAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
VDSS
Value
ꢀ30
Unit
V
Drain - Source voltage
Continuous drain current
Pulsed drain current
*1
A
ID
ꢂ3.5
*2
A
ID,pulse
ꢂ14
VGSS
Gate - Source voltage
V
ꢂ20
*3
1.0
W
W
°C
°C
PD
Power dissipation
*4
0.32
PD
Tj
Junction temperature
150
Tstg
Range of storage temperature
ꢀ55 to ꢁ150
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
1/11
Data Sheet
Unit
FRA
RRL035P03
ꢀThermal resistance
Parameter
Values
Symbol
Min.
Typ.
Max.
*3
-
-
-
-
125
391
°C/W
°C/W
RthJA
Thermal resistance, junction - ambient
*4
RthJA
ꢀElectrical characteristics(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
V
Min.
Max.
-
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = ꢀ1mA
-
ꢀ30
ΔV(BR)DSS
ΔTj
ID= ꢀ1mA
referenced to 25°C
Breakdown voltage
temperature coefficient
-
-
mV/°C
ꢀ25
IDSS
IGSS
VDS = ꢀ30V, VGS = 0V
VGS = ꢂ20V, VDS = 0V
VDS = ꢀ10V, ID = ꢀ1mA
Zero gate voltage drain current
Gate - Source leakage current
Gate threshold voltage
-
-
-
-
-
ꢀ1
ꢆA
ꢆA
V
ꢂ10
ꢀ2.5
VGS (th)
ꢀ1.0
ΔV(GS)th
ΔTj
ID=b ꢀ1mA
referenced to 25°C
Gate threshold voltage
temperature coefficient
-
3.9
-
mV/°C
VGS= ꢀ10V, ID= ꢀ3.5A
VGS= ꢀ4.5V, ID= ꢀ1.7A
VGS= ꢀ4.0V, ID= ꢀ1.7A
VGS= ꢀ10V, ID= ꢀ3.5A, Tj=125°C
f = 1MHz, open drain
VDS= ꢀ10V, ID= ꢀ3.5A
-
36
52
58
52
19
6.5
50
72
81
73
-
-
Static drain - source
on - state resistance
*5
RDS(on)
mꢃ
-
-
RG
Gate input resistannce
Transconductance
-
ꢃ
*5
2.3
-
S
gfs
*1 Limited only by maximum temperature allowed.
*2 Pw ꢅ 10ꢆs, Duty cycle ꢅ 1%
*3 Mounted on a ceramic board (30×30×0.8mm)
*4 Mounted on a FR4 (15×20×0.8mm)
*5 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
2/11
Data Sheet
Unit
FRA
RRL035P03
ꢀElectrical characteristics(Ta = 25°C)
Parameter Symbol
Input capacitance
Values
Typ.
800
120
110
7
Conditions
VGS = 0V
Min.
Max.
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDS = ꢀ10V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
pF
ns
f = 1MHz
*5
V
DD 䏡 ꢀ15V, VGS = ꢀ10V
td(on)
*5
ID = ꢀ1.7A
RL = 8.8ꢃ
RG = 10ꢃ
9
tr
*5
Turn - off delay time
Fall time
75
td(off)
*5
40
tf
ꢀGate Charge characteristics(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
nC
Min.
-
Max.
-
V
V
DD 䏡 ꢀ15V, ID= ꢀ3.5A
GS = ꢀ5V
8.0
14
*5
Total gate charge
Qg
V
V
DD 䏡 ꢀ15V, ID= ꢀ3.5A
GS = ꢀ10V
-
-
*5
Gate - Source charge
Gate - Drain charge
-
-
2.5
3.0
-
-
Qgs
V
V
DD 䏡 ꢀ15V, ID= ꢀ3.5A
GS = ꢀ5V
*5
Qgd
ꢀBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
Max.
ꢀ0.8
ꢀ1.2
Inverse diode continuous,
forward current
*1
Ta = 25°C
-
-
-
-
A
V
IS
*5
VGS = 0V, Is = ꢀ3.5A
Forward voltage
VSD
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
3/11
Data Sheet
FRA
RRL035P03
ꢀElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
120
100
80
60
40
20
0
Operation in this area
is limited by RDS(on)
(VGS = ꢀ10V)
PW = 100ꢆs
PW = 1ms
10
1
PW = 10ms
DC Operation
0.1
0.01
Ta=25ºC
Single Pulse
Mounted on a ceramic board.
(30mm 㽢 30mm 㽢 0.8mm)
0
50
100
150
200
0.1
1
10
100
Drain - Source Voltage : -VDS [V]
Junction Temperature : Tj [rC]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Fig.4 Single Pulse Maxmum Power
dissipation
1000
Ta=25ºC
Single Pulse
Ta=25ºC
Single Pulse
1
100
10
1
top D = 1
D = 0.5
D = 0.1
0.1
0.01
D = 0.05
D = 0.01
bottom Single
Rth(ch-a)=125ºC/W
Rth(ch-a)(t)=r(t)㽢Rth(ch-a)
Mounted on ceramic board
(30mm 㽢 30mm 㽢 0.8mm)
0.001
0.0001
0.01
1
100
0.0001
0.01
1
100
Pulse Width : PW [s]
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
4/11
Data Sheet
FRA
RRL035P03
ꢀElectrical characteristic curves
Fig.6 Typical Output Characteristics(II)
Fig.5 Typical Output Characteristics(I)
10
8
10
VGS= ꢀ4.5V
VGS= ꢀ10.0V
VGS= ꢀ4.5V
VGS= ꢀ10.0V
VGS= ꢀ4.0V
VGS= ꢀ3.5V
VGS= ꢀ3.0V
VGS= ꢀ2.5V
8
VGS= ꢀ3.5V
6
6
VGS= ꢀ4.0V
4
4
VGS= ꢀ3.0V
2
2
Ta=25ºC
VGS= ꢀ2.5V
Ta=25ºC
Pulsed
Pulsed
0
0
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Drain - Source Voltage : -VDS [V]
Drain - Source Voltage : -VDS [V]
Fig.7 Breakdown Voltage
㻌 㻌 㻌 vs. Junction Temperature
Fig.8 Typical Transfer Characteristics
10
60
VDS= ꢀ10V
Pulsed
VGS = 0V
ID = ꢀ1mA
Pulsed
1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
40
20
0
Ta= ꢀ25ºC
0.1
0.01
0.001
-50
0
50
100
150
0
1
2
3
Junction Temperature : Tj [rC]
Gate - Source Voltage : -VGS [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
5/11
Data Sheet
FRA
RRL035P03
ꢀElectrical characteristic curves
Fig.9 Gate Threshold Voltage
vs. Junction Temperature
Fig.10 Transconductance vs. Drain Current
3
10
VDS= ꢀ10V
Pulsed
VDS = ꢀ10V
ID = ꢀ1mA
Pulsed
2
1
0
1
Ta= ꢀ25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
-50
0
50
100
150
0.01
0.1
1
10
Junction Temperature : Tj [rC]
Drain Current : -ID [A]
Fig.11 Drain CurrentDerating Curve
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
200
150
100
50
1.2
Ta=25ºC
Pulsed
1
0.8
0.6
0.4
0.2
0
ID = ꢀ1.7A
ID = ꢀ3.5A
0
0
5
10
15
-25
0
25
50
75 100 125 150
Gate - Source Voltage : -VGS [V]
Junction Temperature : Tj [ºC]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
6/11
Data Sheet
FRA
RRL035P03
ꢀElectrical characteristic curves
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
60
40
20
0
1000
Ta=25ºC
VGS= ꢀ4.0V
VGS= ꢀ4.5V
VGS= ꢀ10V
Pulsed
100
10
1
VGS = ꢀ10V
ID = ꢀ3.5A
Pulsed
0.1
1
10
-50 -25
0
25 50 75 100 125 150
Drain Current : -ID [A]
Junction Temperature : Tj [ºC]
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain-Source On-State
Resistance vs. Drain Current(III)
1000
1000
VGS= ꢀ10V
Pulsed
VGS= ꢀ4.5V
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= ꢀ25ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= ꢀ25ºC
Pulsed
100
10
1
100
10
1
0.1
1
10
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
7/11
Data Sheet
FRA
RRL035P03
ꢀElectrical characteristic curves
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current(IV)
Fig.18 Typical Capacitance
㻌 㻌 㻌 㻌 vs. Drain - Source Voltage
10000
1000
Ta = 25ºC
f = 1MHz
VGS = 0V
VGS= ꢀ4.0V
Pulsed
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= ꢀ25ºC
Ciss
1000
100
10
100
10
1
Coss
Crss
0.1
1
10
0.01
0.1
1
10
100
Drain Current : -ID [A]
Drain - Source Voltage : -VDS [V]
Fig.19 Switching Characteristics
Fig.20 Dynamic Input Characteristics
10
9
10000
1000
100
10
Ta=25ºC
VDD= ꢀ15V
VGS= ꢀ10V
RG=10ꢃꢇ
Pulsed
8
tf
7
td(off)
6
5
4
td(on)
3
2
1
0
Ta=25ºC
VDD= ꢀ15V
ID= ꢀ3.5A
RG=10ꢃꢇ
Pulsed
tr
0.1
Drain Current : -ID [A]
1
0
5
10
15
0.01
1
10
Total Gate Charge : Qg [nC]
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
8/11
Data Sheet
FRA
RRL035P03
ꢀElectrical characteristic curves
Fig.21 Source Current
㻌 㻌 㻌 㻌 㻌 vs. Source Drain Voltage
10
VGS=0V
Pulsed
1
Ta=125ºC
Ta=75ºC
0.1
Ta=25ºC
Ta= ꢀ25ºC
0.01
0
0.5
1
1.5
Source-Drain Voltage : -VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
9/11
Data Sheet
FRA
RRL035P03
ꢀMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2䚷Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
10/11
Data Sheet
FRA
RRL035P03
ꢀDimensions (Unit : mm)
㻰
㻭
㼑
TUMT6
㼎
㼏
㼤
㻿 㻭
㼑
㼥
㻿
㻿
㼎㻞
Patterm of terminal position areas
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻹㻭㼄
㻵㻺㻯㻴㻱㻿
㻰㻵㻹
㻹㻵㻺
㻙
㻹㻵㻺
㻙
㻜
㻜㻚㻜㻞㻤
㻜㻚㻜㻝
㻜㻚㻜㻜㻡
㻜㻚㻜㻣㻡
㻜㻚㻜㻢㻟
㻹㻭㼄
㻜㻚㻜㻟㻟
㻜㻚㻜㻜㻠
㻜㻚㻜㻟㻞
㻜㻚㻜㻝㻢
㻜㻚㻜㻜㻥
㻜㻚㻜㻤㻟
㻜㻚㻜㻣㻝
㻭
㻭㻝
㻭㻞
㼎
㼏
㻰
㻜㻚㻤㻡
㻜㻚㻝㻜
㻜㻚㻤㻞
㻜㻚㻠㻜
㻜㻚㻞㻞
㻞㻚㻝㻜
㻝㻚㻤㻜
㻜㻚㻜㻜
㻜㻚㻣㻞
㻜㻚㻞㻡
㻜㻚㻝㻞
㻝㻚㻥㻜
㻝㻚㻢㻜
㻱
㻜㻚㻢㻡
㻜㻚㻞㻜
㻜㻚㻜㻟
㻜㻚㻜㻝
㼑
㻴
㻱
㻞㻚㻜㻜
㻞㻚㻞㻜
㻜㻚㻜㻣㻥
㻜㻚㻜㻤㻣
㻸
㻸㼜
㼤
㼥
㻙
㻙
㻙
㻜㻚㻠㻜
㻜㻚㻝㻜
㻜㻚㻝㻜
㻙
㻙
㻙
㻜㻚㻜㻝㻢
㻜㻚㻜㻜㻠
㻜㻚㻜㻜㻠
㻹㻵㻸㻵㻹㻱㼀㻱㻾㻿
㻹㻭㼄
㻝㻚㻣㻜
㻵㻺㻯㻴㻱㻿
㻜㻚㻜㻢㻣
㻰㻵㻹
㻹㻵㻺
㻹㻵㻺
㻹㻭㼄
㼑㻝
㼎㻞
㼘㻝
㻙
㻙
㻜㻚㻡㻜
㻜㻚㻡㻜
㻙
㻙
㻜㻚㻜㻞
㻜㻚㻜㻞
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
2016.06 - Rev.B
11/11
Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
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responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
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confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
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Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
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isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
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1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
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exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
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2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.003
© 2015 ROHM Co., Ltd. All rights reserved.
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