RSD046P05 [ROHM]
Pch 45V 4.5A Power MOSFET; P沟道45V 4.5A功率MOSFET
| 型号： | RSD046P05 |
| 厂家： | 
ROHM |
| 描述： | Pch 45V 4.5A Power MOSFET |
| 文件： | 总13页 (文件大小：722K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RSD046P05
RSD046P05
Pch 45V 4.5A Power MOSFET
Datasheet
lOutline
VDSS
-45V
155mW
-4.5A
15W
CPT3
(SC-63)
<SOT-428>
RDS(on) (Max.)
(3)
ID
(2)
(1)
PD
lFeatures
lInner circuit
(3)
1) Low on-resistance.
*1
(1) Gate
(2) Drain
(3) Source
2) Fast switching speed.
3) Drive circuits can be simple.
4) Parallel use is easy.
(1)
*2
*1 ESD PROTECTION DIODE
*2 BODY DIODE
5) Pb-free lead plating ; RoHS compliant
6) 100% Avalanche tested
(2)
lPackaging specifications
Packaging
Taping
330
Reel size (mm)
lApplication
Tape width (mm)
Type
16
Switching Power Supply
Automotive Motor Drive
Automotive Solenoid Drive
Basic ordering unit (pcs)
2,500
TL
Taping code
Marking
046P05
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
VDSS
Value
-45
Unit
V
Drain - Source voltage
*1
Tc = 25°C
A
ID
4.5
Continuous drain current
*1
Tc = 100°C
A
ID
2.4
*2
Pulsed drain current
A
ID,pulse
9.0
VGSS
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
V
20
*3
14.3
mJ
A
EAS
*3
IAR
-4.5
Tc = 25°C
PD
PD
Tj
15
W
W
°C
°C
Power dissipation
Ta = 25°C *4
0.85
Junction temperature
150
Tstg
Range of storage temperature
-55 to +150
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
1/12
Data Sheet
RSD046P05
lThermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
RthJC
RthJA
Tsold
-
-
-
-
-
-
8.33
147
265
°C/W
°C/W
°C
Thermal resistance, junction - ambient
Thermal resistance, junction - ambient *4
Soldering temperature, wavesoldering for 10s
lElectrical characteristics(Ta = 25°C)
Values
Typ.
-
Parameter
Symbol
V(BR)DSS
Conditions
Unit
V
Min.
Max.
-
Drain - Source breakdown voltage
VGS = 0V, ID = -1mA
VDS = -45V, VGS = 0V
Tj = 25°C
-45
-
-
-
-
-1
IDSS
Zero gate voltage drain current
mA
VDS = -45V, VGS = 0V
Tj = 125°C
-100
IGSS
VGS = 20V, VDS = 0V
VDS = -10V, ID = -1mA
VGS = -10V, ID = -4.5A
VGS = -4.5V, ID = -4.5A
VGS = -4.0V, ID = -4.5A
VGS = -10V, ID = -4.5A
Tj = 125°C
Gate - Source leakage current
Gate threshold voltage
-
-1
-
-
10
-3
mA
VGS (th)
-
V
110
160
185
155
225
260
-
Static drain - source
on - state resistance
*5
-
RDS(on)
mW
-
180
6
250
-
gfs
VDS = -10V, ID = -4.5A
Forward transfer admittance
3
S
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
2/12
Data Sheet
RSD046P05
lElectrical characteristics(Ta = 25°C)
Values
Typ.
550
100
50
Parameter
Symbol
Conditions
VGS = 0V
Unit
Min.
Max.
Ciss
Coss
Crss
Input capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VDS = -10V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
pF
ns
f = 1MHz
*5
V
DD ⋍ -25V, VGS = -10V
8
td(on)
*5
ID = -2.0A
RL = 12W
RG = 10W
8
tr
*5
Turn - off delay time
Fall time
35
td(off)
*5
8
tf
lGate Charge characteristics(Ta = 25°C)
Values
Typ.
12
Parameter
Symbol
Conditions
DD ⋍ -25V
Unit
Min.
Max.
*5
V
Total gate charge
-
-
-
-
-
-
-
-
Qg
*5
ID = -4.5A
VGS = -5V
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
2.2
nC
V
Qgs
*5
2.2
Qgd
V(plateau)
VDD ⋍ -30V, ID = -4.5A
-3.4
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
6
Max.
-4.5
-9
*1
Continuous source current
Pulsed source current
Forward voltage
-
-
-
-
-
A
A
IS
Tc = 25°C
*2
-
ISM
*5
VGS = 0V, IS = -4.5A
-
V
VSD
-1.2
-
*5
Reverse recovery time
Reverse recovery charge
40
60
ns
mC
trr
IS = -4.5A
di/dt = -100A/ms
*5
-
Qrr
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L ⋍ 1mH, VDD = -25V, Rg = 10W, starting Tj = 25°C
*4 Mounted on a epoxy PCB FR4 (20mm × 30mm × 0.8mm)
*5 Pulsed
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
3/12
Data Sheet
RSD046P05
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
100
Ta=25ºC
Single Pulse
10
PW = 100us
1
PW = 1ms
Operation in this
area is limited
by RDS(on)
PW = 10ms
0.1
0.01
0
25
50
75 100 125 150 175
0.1
1
10
100
1000
Drain - Source Voltage : -VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
10
Ta=25ºC
Rth(j-c)(t) = r(t)×Rth(ch-c)
Rth(j-c) = 8.3ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.00010.001 0.01 0.1
1
10 100 1000
Pulse Width : PW [s]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
4/12
Data Sheet
RSD046P05
lElectrical characteristic curves
Fig.5 Avalanche Energy Derating Curve
vs Junction Temperature
Fig.4 Avalanche Current vs Inductive Load
100
120
100
80
60
40
20
0
VDD= -25V,RG=25W
VGF= -10V,VGR=0V
Starting Tch=25ºC
10
1
0.1
0.01
0.1
1
10
100
0
25
50
75 100 125 150 175
Coil Inductance : L [mH]
Junction Temperature : Tj [°C]
Fig.7 Typical Output Characteristics(II)
Fig.6 Typical Output Characteristics(I)
4
4
VGS=10.0V
Ta=25ºC
VGS=10.0V
Ta=25ºC
3.5
Pulsed
Pulsed
VGS=4.5V
VGS=4.5V
VGS=4.0V
3
2.5
2
3
2
1
0
VGS=4.0V
VGS=3.0V
1.5
1
VGS=3.0V
VGS=2.5V
0.5
0
VGS=2.5V
0.8
0
0.2
0.4
0.6
1
0
2
4
6
8
10
Drain - Source Voltage : -VDS [V]
Drain - Source Voltage : -VDS [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
5/12
Data Sheet
RSD046P05
lElectrical characteristic curves
Fig.8 Breakdown Voltage
vs. Junction Temperature
Fig.9 Typical Transfer Characteristics
100
60
VDS= -10V
VGS = 0V
55
ID = -1mA
10
50
45
40
35
30
25
20
1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
0.01
0.001
-50
0
50
100
150
0
1
2
3
4
5
Junction Temperature : Tj [°C]
Gate - Source Voltage : -VGS [V]
Fig.10 Gate Threshold Voltage
vs. Junction Temperature
Fig.11 Transconductance vs. Drain Current
3.0
100
VDS = -10V
ID = -1mA
VDS= -10V
2.5
2.0
1.5
1.0
0.5
0.0
10
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
1
0.1
0.01
-50 -25
0
25 50 75 100 125 150
0.01
0.1
1
10
100
Junction Temperature : Tj [°C]
Drain Current : -ID [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
6/12
Data Sheet
RSD046P05
lElectrical characteristic curves
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Resistance vs. Drain Current(I)
600
1000
100
10
Ta=25ºC
Ta=25ºC
550
500
450
400
350
300
250
200
150
100
50
VGS= -10V
VGS= -4.5V
VGS= -4.0V
ID = -2.25A
ID = -4.5A
0
0.01
0.1
1
10
100
0
5
10
15
Gate - Source Voltage : -VGS [V]
Drain Current : -ID [A]
Fig.14 Static Drain - Source On - State
Resistance vs. Junction Temperature
200
150
100
50
VGS = -10V
ID = -4.5A
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
7/12
Data Sheet
RSD046P05
lElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
Resistance vs. Drain Current(III)
1000
1000
100
10
VGS= -10V
VGS= -4.5V
Ta=125ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
10
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Drain Current : -ID [A]
Drain Current : -ID [A]
Fig.17 Static Drain - Source On - State
Fig.18 Drain Current Derating Curve
Resistance vs. Drain Current(IV)
1000
100
10
120
Ta=125ºC
VGS= -4.0V
Ta=75ºC
Ta=25ºC
Ta= -25ºC
100
80
60
40
20
0
0
25
50
75 100 125 150 175
0.01
0.1
1
10
100
Drain Current : -ID [A]
Junction Temperature : Tj [ºC]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
8/12
Data Sheet
RSD046P05
lElectrical characteristic curves
Fig.19 Typical Capacitance
vs. Drain - Source Voltage
Fig.20 Switching Characteristics
1000
10000
Ta=25ºC
Ta = 25ºC
f = 1MHz
VGS = 0V
VDD = -25V
VGS = -10V
RG=10W
tf
1000
Ciss
100
10
1
Coss
100
10
1
td(off)
Crss
tr
td(on)
0.01
0.1
1
10
100
0.01
0.1
1
10
100
Drain - Source Voltage : -VDS [V]
Drain Current : -ID [A]
Fig.22 Source Current
vs. Source - Drain Voltage
Fig.21 Dynamic Input Characteristics
10
100
VGS=0V
Ta=25ºC
VDD = -25V
ID = -4.5A
RG=10W
10
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
1
5
0
0.1
0.01
0.0
0.5
1.0
1.5
0
5
10
Source-Drain Voltage : -VSD [V]
Total Gate Charge : Qg [nC]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
9/12
Data Sheet
RSD046P05
lElectrical characteristic curves
Fig23 Reverse Recovery Time
vs.Source Current
100
10
Ta=25ºC
di / dt = -100A / ms
VGS = 0V
1
0.1
1
10
Source Current : -IS [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
10/12
Data Sheet
RSD046P05
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.3-2 Avalanche Waveform
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Avalanche Measurement Circuit
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
11/12
Data Sheet
RSD046P05
lDimensions (Unit : mm)
A2
B
D
A
b1
c1
CPT3
A1
b2
b3
c
e
b
x
B A
l3
A3
l1
l2
MILIMETERS
MIN MAX
INCHES
0.01
DIM
MIN
0
0.087
MAX
0.006
0.098
A1
A2
A3
b
b1
b2
b3
c
0.00
2.20
0.15
2.50
0.25
0.55
5.00
0.75
5.30
0.022
0.197
0.03
0.209
5.00
0.75
0.20
0.03
0.40
0.40
6.30
5.40
0.60
0.60
6.70
5.80
0.016
0.016
0.248
0.213
0.024
0.024
0.264
0.228
c1
D
E
2.30
0.09
e
HE
L
9.00
2.20
0.80
1.20
10.00
2.80
1.40
1.80
0.354
0.087
0.031
0.047
0.394
0.11
0.055
0.071
L1
L2
L3
L4
Lp
x
5.30
0.90
0.209
0.035
1.00
-
1.60
0.25
0.039
-
0.063
0.01
MILIMETERS
MAX
INCHES
DIM
MIN
-
-
-
-
MIN
-
-
-
-
MAX
0.04
0.205
0.098
0.217
0.394
b5
b6
ｌ1
ｌ2
ｌ3
1.00
5.20
2.50
5.50
10.00
-
-
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.08 - Rev.A
12/12
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
R1120A
相关型号：
RSD050N06FRATL
Power Field-Effect Transistor, 5A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN
ROHM
RSD050N10TL
Power Field-Effect Transistor, 5A I(D), 100V, 0.205ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, SC-63, 3 PIN
ROHM
RSD080N06FRATL
Power Field-Effect Transistor, 8A I(D), 60V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN
ROHM
RSD080N06TL
Power Field-Effect Transistor, 8A I(D), 60V, 0.109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, SC-63, 3 PIN
ROHM
RSD080P05FRATL
Power Field-Effect Transistor, 8A I(D), 45V, 0.147ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN
ROHM
RSD080P05TL
Power Field-Effect Transistor, 8A I(D), 45V, 0.147ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CPT3, SC-63, 3 PIN
ROHM
RSD100N10FRATL
Power Field-Effect Transistor, 10A I(D), 100V, 0.147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-63, 3/2 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明