RSR010N10 [ROHM]
4V Drive Nch MOSFET; 4V驱动N沟道MOSFET
| 型号： | RSR010N10 |
| 厂家： | 
ROHM |
| 描述： | 4V Drive Nch MOSFET |
| 文件： | 总7页 (文件大小：1161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
4V Drive Nch MOSFET
RSR010N10
Structure
Dimensions (Unit : mm)
Silicon N-channel MOSFET
TSMT3
Features
(3)
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT3).
(1)
(2)
Abbreviated symbol : ZJ
Application
Switching
Packaging specifications
Inner circuit
Package
Taping
TL
(3)
Type
Code
Basic ordering unit (pieces)
3000
∗1
RSR010N10
∗2
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
Drain-source voltage
(1)
(2)
(1) Gate
(2) Source
(3) Drain
Limits
Unit
V
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
VDSS
VGSS
ID
100
Gate-source voltage
20
V
Continuous
Pulsed
1
A
Drain current
*1
IDP
4
A
Continuous
Pulsed
IS
0.8
A
Source current
(Body Diode)
*1
*2
ISP
4
A
Power dissipation
PD
1
W
C
C
Channel temperature
Tch
Tstg
150
Range of storage temperature
*1 Pw10s, Duty cycle1%
55 to 150
*2 Mounted on a ceramic board.
Thermal resistance
Parameter
Symbol
Rth (ch-a)*
Limits
125
Unit
Channel to Ambient
*Mounted on a ceramic board.
C / W
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2011.05 - Rev.A
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Data Sheet
RSR010N10
Electrical characteristics (Ta = 25C)
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A VGS=20V, VDS=0V
ID=1mA, VGS=0V
A VDS=100V, VGS=0V
Conditions
Gate-source leakage
-
10
Drain-source breakdown voltage V(BR)DSS
100
-
-
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
1.0
-
-
1
VGS (th)
-
2.5
V
VDS=10V, ID=1mA
ID=1A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4.0V
ID=1A, VDS=10V
370
400
410
-
520
Static drain-source on-state
resistance
*
RDS (on)
m
S
-
560
-
580
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
1
-
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
td(on)
tr
140
20
12
6
pF VDS=25V
pF VGS=0V
-
-
pF f=1MHz
-
ns ID=0.5A, VDD 50V
ns VGS=10V
ns RL=100
ns RG=10
nC ID=1A, VDD 50V
nC VGS=5V
nC
*
*
*
*
*
*
*
-
9
Turn-off delay time
Fall time
td(off)
tf
-
22
15
3.5
0.9
0.8
-
Total gate charge
Gate-source charge
Gate-drain charge
Qg
-
Qgs
Qgd
-
-
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max. Unit
1.2
Conditions
*
VSD
V
Is=1A, VGS=0V
*Pulsed
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2011.05 - Rev.A
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Data Sheet
RSR010N10
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
Fig.2 Typical Output Characteristics (Ⅱ)
1
1
0.8
0.6
0.4
0.2
0
VGS=2.8V
Ta=25°C
pulsed
VGS=10.0V
VGS=2.5V
0.8
0.6
0.4
0.2
0
VGS=4.5V
VGS=4.0V
VGS=2.5V
VGS=10.0V
VGS=4.5V
VGS=4.0V
VGS=2.8V
Ta=25°C
pulsed
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
Drain-Source Voltage : VDS [V]
Drain-Source Voltage : VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
10000
1000
100
10000
1000
100
VGS=10V
pulsed
Ta=25°C
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
VGS=4.0V
VGS=4.5V
VGS=10V
10
10
0.01
0.1
1
10
0.01
0.1
1
10
Drain Current : ID [A]
Drain Current : ID [A]
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10000
10000
VGS=4.5V
pulsed
VGS=4V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1000
100
10
1000
100
10
0.01
0.1
1
10
0.01
0.1
1
10
Drain Current : ID [A]
Drain Current : ID [A]
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2011.05 - Rev.A
Data Sheet
RSR010N10
ꢀ
Fig.8 Typical Transfer Characteristics
Fig.7 Forward Transfer Admittance vs. Drain Current
10
10
1
VDS=10V
pulsed
VDS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.1
0.01
0.001
0.01
0.01
0.1
1
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Drain Current : ID [A]
Gate-Source Voltage : VGS [V]
Fig.9 Source Current vs. Source-Drain Voltage
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1000
10
VGS=0V
pulsed
Ta=25°C
pulsed
800
ID=0.5A
1
ID=1.0A
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
600
400
200
0
0.1
0.01
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
Gate-Source Voltage : VGS [V]
Source-Drain Voltage : VSD [V]
Fig.11 Switching Characteristics
Fig.12 Dynamic Input Characteristics
1000
100
10
10
8
V
DD≒50V
Ta=25°C
VDD=50V
ID=1A
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
Pulsed
td(off)
tf
6
4
tr
2
td(on)
0
1
0
2
4
6
8
10
0.01
0.1
1
10
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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2011.05 - Rev.A
Data Sheet
RSR010N10
ꢀ
Fig.14 Maximum Safe Operating Area
Fig.13 Typical Capacitance vs. Drain-Source Voltage
1000
100
10
10
1
Operation in this area is limited by RDS(on)
(VGS = 10V)
Ta=25°C
f=1MHz
VGS=0V
PW = 100μs
Ciss
0.1
PW = 1ms
PW = 10ms
Coss
Crss
0.01
0.001
DC Operation
Ta=25°C
Single Pulse
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
1
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
Drain-Source Voltage : VDS [V]
Drain-Source Voltage : VDS [ V ]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Ta=25°C
Single Pulse
1
0.1
0.01
Mounted on a ceramic board.
(30mm × 30mm × 0.8mm)
Rth(ch-a)=125°C/W
Rth(ch-a)(t)=r(t)×Rth(ch-a)
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse width : Pw (s)
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2011.05 - Rev.A
Data Sheet
RSR010N10
Measurement circuits
Pulse width
90%
VGS
ID
VDS
50%
10%
50%
V
GS
DS
R
L
V
10%
10%
90%
D.U.T.
V
DD
RG
90%
t
d(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2ꢀSwitching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
V
GS
I
D
VDS
Q
g
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-2 Gate Charge Waveform
Fig.2-1 Gate Charge Measurement Circuit
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2011.05 - Rev.A
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