RSS085N05FU6TB [ROHM]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | RSS085N05FU6TB |
| 厂家： | 
ROHM |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
| 文件： | 总5页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RSS085N05
Transistor
4V Drive Nch MOS FET
RSS085N05
zStructure
zExternal dimensions (Unit : mm)
Silicon N-channel
MOS FET
SOP8
5.0
1.75
0.4
)
( )
5
(
8
zFeatures
1) Built-in G-S Protection Diode.
2) Small and Surface Mount Package (SOP8).
( )
1
( )
4
0.2
1.27
1pin mark
zApplications
Each lead has same dimensions
Power switching , DC / DC converter, Inverter
zPackaging dimensions
Package
Taping
TB
Type
Code
Basic ordering unit (pieces)
2500
RSS085N05
zAbsolute maximum ratings (Ta=25°C)
zEquivalent circuit
Parameter
Drain-source voltage
Gate-source voltage
(8) (7) (6) (5)
Symbol
VDSS
VGSS
ID
Limits
Unit
V
(8)
(7)
(6)
(5)
45
20
±8.5
±34
V
Continuous
Pulsed
A
∗
2
Drain current
(1) (2) (3) (4)
IDP
A
∗
1
*1
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
IS
Continuous
Pulsed
1.6
A
Source current
(Body diode)
ISP
34
A
*1
*2
(1)
(2)
(3)
(4)
Total power dissipation
Chanel temperature
PD
2
W
oC
oC
∗1 ESD Protection Diode.
∗2 Body Diode.
Tch
150
Range of Storage temperature
*1 PW≤10µｓ、Duty cycle≤1%
*2 Mounted on a ceramic board
Tstg
-55 to +150
∗
A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
zThermal resistance
Parameter
Chanel to ambient
Symbol
Rth(ch-a) *
Limits
62.5
Unit
oC/W
* Mounted on a ceramic board
1/4
RSS085N05
Transistor
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Conditions
µA VGS=20V, VDS=0V
Unit
Gate-source leakage
IGSS
−
−
−
10
−
Drain-source breakdown voltage V(BR) DSS 45
V
µA
V
ID= 1mA, VGS=0V
Zero gate voltage drain current
Gate threshold voltage
IDSS
−
1.0
−
−
−
−
−
1
V
V
DS= 45V, VGS=0V
VGS (th)
2.5
18
23
25
−
−
−
−
−
DS= 10V, ID= 1mA
13
16
18
−
1500
350
170
19
25
71
24
mΩ ID= 8.5A, VGS= 10V
mΩ ID= 8.5A, VGS= 4.5V
mΩ ID= 8.5A, VGS= 4V
Static drain-source on-state
resistance
∗
RDS (on)
∗
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Yfs
Ciss
7.0
S
VDS= 10V, ID= 8.5A
−
−
−
−
−
−
−
−
pF
pF
pF
ns
ns
ns
ns
nC
V
DS= 10V
Coss
Crss
td (on)
VGS=0V
f=1MHz
∗
∗
∗
VDD 25V
I
V
R
R
D
= 4.0A
GS= 10V
=6.3Ω
=10Ω
t
r
−
−
−
Turn-off delay time
Fall time
td (off)
L
∗
∗
tf
G
Total gate charge
Gate-source charge
Qg
15.3 21.4
VGS= 5V
=10Ω
VDD 25V
∗
∗
Qgs
Qgd
−
−
4.4
6.0
−
−
nC ID= 8.5A
R =2.9Ω
L
R
G
Gate-drain charge
nC
∗Pulsed
Body diode characteristics (Source-Drain) (Ta=25°C)
Parameter
Forward voltage
Symbol Min. Typ. Max.
Conditions
IS= 8.5A, VGS=0V
Unit
V
∗
V
SD
−
−
1.2
∗Pulsed
2/4
RSS085N05
Transistor
zElectrical characteristic curves
1000
100
10
1000
100
10
10
VGS=4.5V
pulsed
VGS=10V
pulsed
VDS=10V
pulsed
Ta=125oC
75oC
Ta=125oC
Ta=125oC
75oC
75oC
ꢀꢀꢀ
25oC
ꢀꢀꢀ25oC
25oC
1
0.1
-25oC
-25oC
ꢀꢀ
-25oC
1
1
0.01
0.01
0.1
1
10
0.01
0.1
1
10
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Drain Current : ID [A]
Drain Current : ID [A]
Gate-Source Voltage : VGS [V]
Fig.2 Static Drain-Source On-State
Fig.1 Typical Transfer Characteristics
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (1)
Resistance vs. Drain Current (2)
1000
200
150
100
50
10
1
Ta=25oC
pulsed
VGS=4V
VGS=0V
Ta=125oC
pulsed
Ta=125oC
pulsed
75oC
25oC
-25oC
75oC
25oC
-25oC
100
10
1
0.1
ID=8.5A
0.01
ID=4.75A
0.001
0
0.01
0.1
1
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0
3
6
9
12
15
Source-Drain Voltage : VSD [V]
Gate-Source Voltage : VGS [V]
Drain Current : ID [A]
Fig.4 Static Drain-Source On-State
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Source-Current vs.
Source-Drain Voltage
Resistance vs. Drain Current (3)
10000
1000
100
10000
1000
100
10
10
Ta=25oC
f=1MHz
Ta=25oC
VDD=25V
GS=10V
Ta=25oC
VDD=25V
VGS=0V
I
D=8.5A
G=10Ω
Pulsed
V
Ciss
Coss
Crss
R
RG=10Ω
Pulsed
tf
td(off)
td(on)
5
0
tr
1
10
0.01
0.1
1
10
0
5
10
15
20
25
30
0.01
0.1
1
10
100
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
Drain-Source Voltage : VDS [V]
Fig.8 Switching Characteristics
Fig.7 Typical capacitance vs.
Source-Drain Voltage
Fig.9 Dynamic Input Characteristics
3/4
RSS085N05
Transistor
zMeasurement circuits
Pulse Width
90%
V
GS
I
D
V
DS
50%
10%
50%
V
GS
DS
RL
V
10%
10%
D.U.T.
RG
V
DD
90%
90%
t
d(on)
td(off)
t
r
tr
t
on
t
off
Fig.11 Switching Time Waveforms
Fig.10 Switching Time Test Circuit
VG
VGS
I
D
V
DS
Q
g
RL
V
GS
I
G (Const.)
D.U.T.
Q
gs
Qgd
RG
V
DD
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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