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RSX205L-30 [ROHM]

Schottky Barrier Diode; 肖特基二极管
RSX205L-30
型号： RSX205L-30
厂家： ROHM    ROHM
描述：

Schottky Barrier Diode
肖特基二极管

肖特基二极管
文件： 总5页 (文件大小：1154K)
中文：  中文翻译
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Data Sheet  
Schottky Barrier Diode  
RSX205L-30  
lApplications  
lDimensions (Unit : mm)  
lLand size figure (Unit : mm)  
General rectification  
2.0  
2.6±0.2  
lFeatures  
1)Small power mold type.(PMDS)  
2)High reliability.  
5
8
0.1±0.02  
ꢀꢀꢀ 0.1  
3)Low IR , Low VF.  
①
②
PMDS  
2.0±0.2  
1.5±0.2  
lConstruction  
lStructure  
Silicon epitaxial planer  
ROHM : PMDS  
JEDEC : SOD-106  
①
②
Manufacture Date  
lTaping dimensions (Unit : mm)  
2.0±0.05  
4.0±0.1  
0.3  
φ 1.55±0.05  
φ 1.55  
2.9±0.1  
4.0±0.1  
2.8MAX  
lAbsolute maximum ratings (Ta=25C)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
Reverse voltage (repetitive)  
Reverse voltage (DC)  
30  
V
V
30  
2.0  
Average rectified forward current (*1)  
Forward current surge peak (60Hz・1cyc)  
Junction temperature  
Io  
IFSM  
Tj  
A
60  
A
150  
C  
C  
Storage temperature  
Tstg  
-40 to +150  
(*1)On the Glass epoxy board, Tc=95°C MAX.  
lElectrical characteristics (Ta=25C)  
Parameter  
Forward voltage  
Symbol  
Min.  
Typ.  
Max.  
0.49  
200  
Unit  
V
Conditions  
VF  
IR  
IF=2.0A  
VR=30V  
-
-
-
-
Reverse current  
μA  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2011.10 - Rev.A  
1/4  
Data Sheet  
RSX205L-30  
ꢀ
1
1000000  
100000  
10000  
1000  
100  
Ta=125°C  
Ta=125°C  
Ta=150°C  
Ta=150°C  
Ta=75°C  
0.1  
0.01  
Ta=75°C  
Ta=25°C  
Ta=25°C  
Ta=-25°C  
10  
Ta=-25°C  
1
0.1  
0.001  
0
5
10  
15  
20  
25  
30  
0
100  
200  
300  
400  
500  
REVERSE VOLTAGE：VR(V)  
FORWARD VOLTAGE：VF(mV)  
VR-IR CHARACTERISTICS  
VF-IF CHARACTERISTICS  
460  
450  
440  
430  
420  
410  
1000  
100  
10  
f=1MHz  
IF=2A  
AVE:444.1mV  
1
0
5
10  
15  
20  
25  
30  
VF DISPERSION MAP  
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
350  
340  
330  
320  
310  
300  
290  
280  
270  
260  
250  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
VR=30V  
f=1MHz  
VR=0V  
AVE:300.1pF  
AVE:103.1mA  
Ct DISPERSION MAP  
IR DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
2/4  
2011.10 - Rev.A  
Data Sheet  
RSX205L-30  
ꢀ
200  
150  
100  
50  
30  
25  
20  
15  
10  
5
IF=0.5A  
IR=1A  
Irr=0.25*IR  
IFSM  
8.3ms  
1cyc  
AVE:66.0A  
AVE:8.30ns  
0
0
IFSM DISPERSION MAP  
trr DISPERSION MAP  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
IFSM  
IFSM  
time  
8.3ms  
8.3ms  
1cyc.  
0
1
10  
100  
1
10  
100  
TIME:t(ms)  
NUMBER OF CYCLES  
IFSM-t CHARACTERISTICS  
IFSM-CYCLE CHARACTERISTICS  
1
0.8  
0.6  
0.4  
0.2  
0
1000  
On glass-epoxy substrate  
Rth(j-a)  
100  
10  
1
D=1/2  
Rth(j-c)  
Sin(θ＝180)  
DC  
0.1  
0
0.5  
1
1.5  
2
0.001  
0.01  
0.1  
1
10  
100  
1000  
TIME:t(s)  
Rth-t CHARACTERISTICS  
AVERAGE RECTIFIED  
FORWARD CURRENT：Io(A)  
Io-Pf CHARACTERISTICS  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
3/4  
2011.10 - Rev.A  
Data Sheet  
RSX205L-30  
ꢀ
Io  
5
4.5  
4
2
1.5  
1
0A  
0V  
VR  
D=t/T  
t
D.C.  
VR=15V  
3.5  
3
D.C.  
T
Tj=150°C  
D=1/2  
2.5  
2
Sin(θ＝180)  
D=1/2  
1.5  
1
Sin(θ＝180)  
0.5  
0
0.5  
0
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
REVERSE VOLTAGE:VR(V)  
VR-PR CHARACTERISTICS  
CASE TEMPERATURE:Tc(°C)  
DERATING CURVE(Io-Tc)  
30  
25  
20  
15  
10  
5
No break at 30kV  
AVE:10.8kV  
0
C=100pF  
C=200pF  
R=0Ω  
R=1.5kΩ  
ESD DISPERSION MAP  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
4/4  
2011.10 - Rev.A  
Notice  
N o t e s  
Thank you for your accessing to ROHM product informations.  
More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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