RT1E050RPTR [ROHM]

Power Field-Effect Transistor, 5A I(D), 30V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSST8, 8 PIN;


型号：	RT1E050RPTR
厂家：	ROHM
描述：	Power Field-Effect Transistor, 5A I(D), 30V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSST8, 8 PIN 开关脉冲光电二极管晶体管
文件：	总6页 (文件大小：165K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

4V Drive Pch MOSFET

RT1E050RP

 Structure

 Dimensions (Unit : mm)

Silicon P-channel MOSFET

TSST8

(8)

(1)

(7)

(2)

(6)

(3)

(5)

(4)

Features

1) Low on-resistance.

2) High power package.

3) 4V drive.

Abbreviated symbol :UD

 Application

Switching

 Packaging specifications

 Inner circuit

(7)

(6)

(5)

Package

Taping

(8)

Type

Code

∗2

Basic ordering unit (pieces)

3000

○

(1) Drain

(2) Drain

(3) Drain

(4) Gate

(5) Source

(6) Drain

(7) Drain

(8) Drain

RT1E050RP

∗1

(2)

(3)

(4)

 Absolute maximum ratings (Ta = 25C)

Parameter Symbol

Drain-source voltage

(1)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

Limits

30

Unit

V_DSS

V_GSS

I_D

Gate-source voltage

20

Continuous

Pulsed

5

Drain current

I_DP

20

Continuous

Pulsed

I_S

1

Source current

(Body Diode)

I_SP

20

Power dissipation

P_D

1.25

150

C

Channel temperature

Tch

Tstg

Range of storage temperature

*1 Pw10s, Duty cycle1%

55 to +150

*2 Mounted on a ceramic board.

 Thermal resistance

Parameter

Symbol

Rth (ch-a)^*

Limits

100

Unit

Channel to Ambient

*Mounted on a ceramic board.

C / W

www.rohm.com

2010.04 - Rev.A

1/5

Data Sheet

ꢀ

RT1E050RP

 Electrical characteristics (Ta = 25C)

Parameter

Symbol

I_GSS

Min.

Typ.

Max.

Unit

A V_GS=20V, V_DS=0V

I_D=1mA, V_GS=0V

A V_DS=30V, V_GS=0V

Conditions

Gate-source leakage

10

Drain-source breakdown voltage V_(BR)DSS

30

Zero gate voltage drain current

Gate threshold voltage

I_DSS

1

V_{GS (th)}

1.0

2.5

V_DS=10V, I_D=1mA

I_D=5A, V_GS=10V

I_D=2.5A, V_GS=4.5V

I_D=2.5A, V_GS=4.0V

I_D=5A, V_DS=10V

Static drain-source on-state

resistance

R_{DS (on)}

m

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

l Y_fsl

3.1

C_iss

C_oss

C_rss

1300

180

160

3.5

4.5

pF V_DS=10V

pF V_GS=0V

pF f=1MHz

t_d(on)

t_r

t_d(off)

t_f

ns I_D=2.5A, V_DD15V

ns V_GS=10V

Turn-off delay time

Fall time

ns R_L=6.0

ns R_G=10

Total gate charge

Gate-source charge

Gate-drain charge

Q_g

Q_gs

Q_gd

nC I_D=5A, V_DD15V

nC V_GS=5V R_L=3

nC R_G=10

*Pulsed

Body diode characteristics (Source-Drain) (Ta = 25C)

Parameter

Forward Voltage

Symbol

Min.

Typ.

Max. Unit

1.2

Conditions

V_SD

I_s=5A, V_GS=0V

*Pulsed

www.rohm.com

2010.04- Rev.A

2/5

Data Sheet

RT1E050RP

 Electrical characteristics curves

V_GS= -3.0V

V_DS= -10V

Pulsed

Ta=25°C

Pulsed

V_GS= -3.0V

Ta=25°C

Pulsed

Ta= 125°C

Ta= 75°C

Ta= 25°C

Ta= - 25°C

V_GS= -2.8V

V_GS= -10V

0.1

V_GS= -4.5V

V_GS= -4.0V

V_GS= -2.8V

V_GS= -4.5V

V_GS= -4.0V

0.01

0.001

V_GS= -2.5V

0.2

0.4

0.6

0.8

DRAIN-SOURCE VOLTAGE : -V_DS[V]

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.3 Typical Transfer Characteristics

Fig.1 Typical Output Characteristics(Ⅰ)

Fig.2 Typical Output Characteristics(Ⅱ)

1000

100

1000

100

1000

100

Ta=25°C

Pulsed

V_GS= -4.5V

Ta=125°C

V_GS= -10V

Ta=125°C

Ta=75°C

Ta=25°C

Ta= -25°C

Pulsed

Ta=75°C

Ta=25°C

Ta= -25°C

Pulsed

V_GS= -4.0V

V_GS= -4.5V

V_GS= -10V

0.1

DRAIN-CURRENT : -I_D[A]

Fig.4 Static Drain-Source On-State

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅱ)

Fig.6 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅰ)

Resistance vs. Drain Current(Ⅲ)

1000

100

V_DS= -10V

Pulsed

V_GS=0V

Pulsed

V_GS= -4.0V

Ta=125°C

Pulsed

Ta=75°C

Ta=25°C

Ta= -25°C

0.1

Ta= -25°C

Ta=25°C

Ta=75°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta=-25°C

0.1

0.01

0.1

0.5

1.5

DRAIN-CURRENT : -I_D[A]

SOURCE-DRAIN VOLTAGE : -V_SD[V]

Fig.8 Forward Transfer Admittance

vs. Drain Current

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(Ⅳ)

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

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2010.04 - Rev.A

3/5

Data Sheet

RT1E050RP

10000

1000

100

200

180

160

140

120

100

Ta=25°C

V_DD= -15V

Ta=25°C

Pulsed

t_f

V_GS= -10V

R_G=10Ω

Pulsed

I_D= -2.5A

t_d(off)

I_D= -5.0A

Ta=25°C

t_d(on)

V_DD= -15V

I_D= -5.0A

R_G=10Ω

Pulsed

t_r

0.01

0.1

12 16 20 24 28

DRAIN-CURRENT : -I_D[A]

GATE-SOURCE VOLTAGE : -V_GS[V]

TOTAL GATE CHARGE : Qg [nC]

Fig.12 Dynamic Input Characteristics

Fig.11 Switching Characteristics

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

10000

1000

100

Ciss

Crss

Coss

Ta=25°C

f=1MHz

V_GS=0V

0.01

0.1

100

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

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2010.04 - Rev.A

4/5

Data Sheet

ꢀ

RT1E050RP

 Measurement circuits

Pulse Width

10%

50%

90%

D.U.T.

10%

90%

10%

90%

^DStd(on)

td(off)

toff

Fig.1-2 Switching Waveforms

Fig.1-1 Switching Time Measurement Circuit

G(Const.)

D.U.T.

Qgd

VDD

Charge

Fig.2-1 Gate Charge Measurement Circuit

Fig.2-2 Gate Charge Waveform

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2010.04- Rev.A

5/5

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Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

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Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

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The technical information speciﬁed herein is intended only to show the typical functions of and

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R1010

RT1E050RPTR [ROHM]

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