RTF020P02TL [ROHM]

2.5V Drive Pch MOSFET; 2.5V驱动P沟道MOSFET


型号：	RTF020P02TL
厂家：	ROHM
描述：	2.5V Drive Pch MOSFET 2.5V驱动P沟道MOSFET 驱动
文件：	总5页 (文件大小：102K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RTF020P02

Transistors

2.5V Drive Pch MOSFET

RTF020P02

zDimensions (Unit : mm)

zStructure

Silicon P-channel

MOSFET

TUMT3

zFeatures

1) Low on-resistance. (120mΩ at 2.5V)

2) High power package.

3) High speed switching.

4) Low voltage drive. (2.5V)

(1) Gate

(2) Source

(3) Drain

Abbreviated symbol : WM

zApplications

DC-DC converter

zPackaging specifications

zEquivalent circuit

Package

Taping

(3)

Type

Code

Basic ordering unit (pieces)

3000

RTF020P02

(1)

∗2

∗1

(2)

(1) Gate

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

−20

Unit

Continuous

2.0

Drain current

Pulsed

∗1

I_DP

∗1

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.6

−8

0.8

I_SP

∗2

Total power dissipation

Channel temperature

P_D

°C

Tch

150

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

Tstg

−55 to +150

°C

zThermal resistance

Parameter

Symbol

Rth(ch-a) ^∗

Limits

156

Unit

Channel to ambient

∗ Mounted on a ceramic board.

°C / W

Rev.C

1/4

RTF020P02

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

µA V_GS= 12V, V_DS=0V

I_D= −1mA, V_GS=0V

µA V_DS= −20V, V_GS=0V

V_DS= −10V, I_D= −1mA

mΩ I_D= −2A, V_GS= −4.5V

mΩ I_D= −2A, V_GS= −4V

mΩ I_D= −1A, V_GS= −2.5V

Unit

Gate-source leakage

I_GSS

−

Drain-source breakdown voltage V_{(BR) DSS}−20

Zero gate voltage drain current

I_DSS

−

120

−

640

110

7.0

1.6

2.0

−1

−2.0

165

−

Gate threshold voltage

V_{GS (th)}−0.7

−

∗

Static drain-source on-state

resistance

R_{DS (on)}

∗

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

2.0

V_DS= −10V, I_D= −1A

V_DS= −10V

V_GS=0V

−

C_oss

C_rss

t_{d (on)}

f=1MHz

∗

= −1A

DD −15V

GS= −4.5V

Turn-off delay time

Fall time

t_{d (off)}

t_f

=15Ω

=10Ω

Total gate charge

Gate-source charge

Q_g

nC V_DD−15V

nC V_GS= −4.5V

nC I_D= −2A

=7.5Ω

=10Ω

Q_gs

Q_gd

−

Gate-drain charge

∗Pulsed

zBody diode characteristics (Source-drain) (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

Forward voltage

−

−1.2

I_S= −0.6A, V_GS=0V

Rev.C

2/4

RTF020P02

Transistors

zElectrical characteristic curves

1000

100

1000

100

V_DS= −10V

Pulsed

Ta=25°C

Pulsed

V_GS

Pulsed

= −4.5V

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=75°C

V_GS= −2.5V

V_GS= −4.0V

V_GS= −4.5V

Ta=25°C

Ta= −25°C

0.1

0.01

0.001

0.1

0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8

DRAIN CURRENT : −I_D(A)

GATE-SOURCE VOLTAGE : −V_GS(V)

Fig.2 Static Drain-Source On-State

Resistance vs. Drain Current

Fig.3 Static Drain-Source On-State

Resistance vs. Drain Current

Fig.1 Typical Transfer Characteristics

1000

100

V_GS

Pulsed

−

V_GS

Pulsed

−

2.5V

V_GS=0V

Pulsed

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

Ta=125°C

Ta=75°C

Ta=25°C

Ta= −25°C

100

0.1

0.01

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

DRAIN CURRENT : −I_D(A)

SOURCE-DRAIN VOLTAGE : −V_SD(V)

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current

Fig.6 Reverse Drain Current vs.

Source-Drain Voltage

10000

Ta=25°C

f=1MHz

V_GS=0V

Ta=25°C

V_DD= −15V

V_GS= −4.5A

R_G=10Ω

V_DD= −15V

I_D= −2A

R_G=10Ω

1000

100

Pulsed

1000

100

Ciss

d (off)

oss

rss

d (on)

0.01

0.1

100

0.01

0.1

DRAIN-SOURCE VOLTAGE : −V_DS(V)

DRAIN CURRENT : −I_D(A)

TOTAL GATE CHARGE : Qg (nC)

Fig.7 Typical Capacitance

vs. Drain-Source Voltage

Fig.8 Switching Characteristics

Fig.9 Dynamic Input Characteristics

Rev.C

3/4

RTF020P02

Transistors

zMeasurement circuits

Pulse Width

10%

50%

90%

10%

90%

10%

D.U.T.

90%

^DStd(on)

td(off)

toff

Fig.11 Switching Waveforms

Fig.10 Switching Time Measurement Circuit

Q^g

G(Const.)

D.U.T.

Qgs

Qgd

Charge

Fig.12 Gate Charge Measurement Circuit

Fig.13 Gate Charge Waveforms

Rev.C

4/4

Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-

cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in

this document.

7) The Products specified in this document are not designed to be radiation tolerant.

8) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, servers, solar cells, and power transmission systems.

9) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

11) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

12) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

13) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

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R1102

RTF020P02TL [ROHM]

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