RTL035N03_07 [ROHM]

2.5V Drive Nch MOSFET; 2.5V驱动N沟道MOSFET
RTL035N03_07
型号: RTL035N03_07
厂家: ROHM    ROHM
描述:

2.5V Drive Nch MOSFET
2.5V驱动N沟道MOSFET

驱动
文件: 总3页 (文件大小:64K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RTL035N03  
Transistors  
2.5V Drive Nch MOSFET  
RTL035N03  
zStructure  
zDimensions (Unit : mm)  
Silicon N-channel MOSFET  
TUMT6  
zFeatures  
1) Low On-resistance.  
2) Space saving, small surface mount package (TUMT6).  
3) Low voltage drive (2.5V drive).  
Abbreviated symbol : PM  
zApplications  
Switching  
zPackaging specifications  
zInner circuit  
(6)  
(5)  
(4)  
Package  
Taping  
TR  
Type  
Code  
Basic ordering unit (pieces)  
3000  
2  
RTL035N03  
1  
(1) Drain  
(2) Drain  
(3) Gate  
(4) Source  
(5) Drain  
(6) Drain  
(1)  
(2)  
(3)  
1 ESD PROTECTION DIODE  
2 BODY DIODE  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Drain-source voltage  
Gate-source voltage  
Symbol  
VDSS  
VGSS  
ID  
Limits  
Unit  
30  
V
V
12  
Continuous  
3.5  
A
Drain current  
Pulsed  
1  
IDP  
IS  
14  
0.8  
A
Source current  
(Body diode)  
Continuous  
A
1  
2  
Pulsed  
ISP  
14  
A
Total power dissipation  
Channel temperature  
PD  
1.0  
W
°C  
°C  
Tch  
Tstg  
150  
Range of storage temperature  
1 Pw10µs, Duty cycle1%  
2 Mounted on a ceramic board  
55 to +150  
zThermal resistance  
Parameter  
Symbol  
Limits  
125  
Unit  
Channel to ambient  
Mounted on a ceramic board  
Rth(ch-a)  
°C/W  
Rev.A  
1/2  
RTL035N03  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
µA VGS=12V, VDS=0V  
Unit  
Gate-source leakage  
IGSS  
10  
Drain-source breakdown voltage V(BR) DSS 30  
V
µA  
V
ID= 1mA, VGS=0V  
Zero gate voltage drain current  
Gate threshold voltage  
IDSS  
0.5  
1
VDS= 30V, VGS=0V  
DS= 10V, ID= 1mA  
VGS (th)  
1.5  
56  
59  
79  
6.4  
V
40  
42  
56  
350  
90  
55  
9
mID= 3.5A, VGS= 4.5V  
mID=3.5A, VGS= 4V  
mID= 3.5A, VGS= 2.5V  
Static drain-source on-state  
resistance  
RDS (on)  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Yfs  
Ciss  
3
S
V
V
V
DS= 10V, ID= 3.5A  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
DS= 10V  
Coss  
Crss  
td (on)  
GS=0V  
f=1MHz  
VDD 15V  
I
V
D
= 1.75A  
t
r
25  
32  
20  
4.6  
0.8  
1.5  
GS= 4.5V  
Turn-off delay time  
Fall time  
td (off)  
R
R
L
=8.6Ω  
tf  
G
=10Ω  
Total gate charge  
Gate-source charge  
Qg  
nC VDD 15V  
VGS= 4.5V  
ID= 3.5A  
=4.3Ω  
Qgs  
Qgd  
nC  
nC  
R
L
RG  
=10Ω  
Gate-drain charge  
Pulsed  
zBody diode characteristics (Source-drain) (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max.  
Conditions  
IS= 0.8A, VGS=0V  
Unit  
V
Forward voltage  
V
SD  
1.2  
Rev.A  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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