RU1E002SP [ROHM]
4V Drive Pch MOSFET; 4V驱动P沟道MOSFET
| 型号： | RU1E002SP |
| 厂家： | 
ROHM |
| 描述： | 4V Drive Pch MOSFET |
| 文件： | 总6页 (文件大小：1138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
4V Drive Pch MOSFET
RU1E002SP
Structure
Dimensions (Unit : mm)
UMT3F
Silicon P-channel MOSFET
2.0
0.9
0.32
(3)
Features
1) High-speed switching.
2) Small package (UMT3F).
3) 4V drive.
(1)
(2)
0.13
0.65 0.65
1.3
Abbreviated symbol : WP
Application
Switching
Packaging specifications
Inner circuit
(3)
Package
Taping
TCL
3000
Type
Code
Basic ordering unit (pieces)
∗1
RU1E002SP
∗2
(1)
(2)
(1) Gate
(2) Source
(3) Drain
∗1 BODY DIODE
∗2 ESD PROTECTION DIODE
Absolute maximum ratings (Ta = 25C)
Parameter Symbol
Drain-source voltage
Limits
30
Unit
V
VDSS
VGSS
ID
Gate-source voltage
20
V
Continuous
Pulsed
0.25
0.5
A
Drain current
*1
*2
IDP
A
Power dissipation
PD
0.2
W
C
C
Channel temperature
Tch
Tstg
150
Range of storage temperature
*1 PW10s, Duty cycle1%
55 to 150
*2 Each terminal mounted on a reference land.
Thermal resistance
Parameter
Symbol
Rth (ch-a)*
Limits
625
Unit
Channel to Ambient
C / W
*Each terminal mounted on a reference land.
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2011.08 - Rev.A
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1/5
Data Sheet
ꢀ
RU1E002SP
Electrical characteristics (Ta = 25C)
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A VGS=20V, VDS=0V
ID=1mA, VGS=0V
A VDS=30V, VGS=0V
Conditions
Gate-source leakage
-
10
Drain-source breakdown voltage V(BR)DSS
30
-
-
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
-
1
VGS (th)
1
-
2.5
V
VDS=10V, ID=1mA
ID=0.25A, VGS=10V
ID=0.15A, VGS=4.5V
ID=0.15A, VGS=4V
VDS=10V, ID=0.15A
-
0.9
1.4
1.6
-
1.4
Static drain-source on-state
resistance
*
RDS (on)
-
2.1
-
2.4
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
0.2
-
-
-
-
-
-
-
-
S
Ciss
Coss
Crss
-
-
-
-
-
-
-
30
10
5
pF VDS=10V
pF VGS=0V
pF f=1MHz
td(on)
4
ns VDD 15V, ID=0.15A
ns VGS=10V
ns RL=100
*
*
*
*
tr
td(off)
tf
6
Turn-off delay time
Fall time
20
23
ns RG=10
*Pulsed
Body diode characteristics (Source-Drain)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max. Unit
1.2
Conditions
*
VSD
V
Is=0.1A, VGS=0V
*Pulsed
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.08 - Rev.A
2/5
Data Sheet
RU1E002SP
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.2 Typical Output Characteristics (Ⅱ)
Fig.1 Typical Output Characteristics (Ⅰ)
0.25
0.25
0.2
0.15
0.1
0.05
0
Ta=25°C
pulsed
Ta=25°C
pulsed
VGS=-10.0V
VGS=-4.5V
VGS=-4.0V
0.2
0.15
0.1
VGS=-2.5V
VGS=-10.0V
VGS=-4.5V
VGS=-4.0V
VGS=-2.5V
0.05
0
VGS=-2.0V
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
Drain-Source Voltage : -VDS [V]
Drain-Source Voltage : -VDS [V]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
10000
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
10000
VGS=-10V
pulsed
Ta=25°C
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
VGS=-4.0V
VGS=-4.5V
VGS=-10V
1000
1000
100
0.01
100
0.01
0.1
Drain Current : -ID [A]
1
0.1
Drain Current : -ID [A]
1
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
10000
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10000
VGS=-4V
pulsed
VGS=-4.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1000
1000
100
0.01
100
0.01
0.1
Drain Current : -ID [A]
1
0.1
Drain Current : -ID [A]
1
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© 2011 ROHM Co., Ltd. All rights reserved.
3/5
2011.08 - Rev.A
Data Sheet
RU1E002SP
ꢀ
Fig.8 Typical Transfer Characteristics
Fig.7 Forward Transfer Admittance vs. Drain Current
1
1
VDS=-10V
pulsed
VDS=-10V
pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.001
0.01
0.001
0.01
0.1
1
2.0
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Drain Current : -ID [A]
Gate-Source Voltage : -VGS [V]
Fig.9 Source Current vs. Source-Drain Voltage
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
5000
1
VGS=0V
pulsed
Ta=25°C
pulsed
4000
ID=-0.15A
ID=-0.25A
3000
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
2000
1000
0
0.01
0
2
4
6
8
10
0.0
0.5
1.0
1.5
Source-Drain Voltage : -VSD [V]
Gate-Source Voltage : -VGS [V]
Fig.12 Typical Capacitance vs. Drain-Source Voltage
Fig.11 Switching Characteristics
V
1000
100
10
1000
100
10
DD≒-15V
Ta=25°C
f=1MHz
VGS=0V
VGS=-10V
RG=10Ω
Ta=25°C
Pulsed
tf
td(off)
Ciss
Coss
Crss
tr
td(on)
1
1
0.01
0.1
1
10
100
0.01
0.1
Drain Current : -ID [A]
Drain-Source Voltage : -VDS [V]
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4/5
2011.08 - Rev.A
Data Sheet
ꢀ
RU1E002SP
Measurement circuits
Pulse width
I
D
V
V
GS
10%
50%
VDS
VGS
50%
90%
R
L
D.U.T.
10%
90%
10%
90%
V
DD
RG
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design
ESD protection circuit.
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.08 - Rev.A
5/5
Notice
N o t e s
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More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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