RU1H100Q [RUICHIPS]
N-Channel Advanced Power MOSFET; N沟道先进的功率MOSFET
| 型号： | RU1H100Q |
| 厂家： | 
RUICHIPS SEMICONDUCTOR CO., LTD |
| 描述： | N-Channel Advanced Power MOSFET |
| 文件： | 总11页 (文件大小：449K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RU1H100
N-Channel Advanced Power MOSFET
Features
Pin Description
• 100V/75A
RDS (ON)=11mW(Typ.) @ VGS=10V
• Ultra Low On-Resistance
TO-220
TO-247
TO-220F
TO-263
• Extremely high dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
Applications
·High Speed Power Switching
·Uninterruptible Power Supply
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
100
±25
VDSS
VGSS
TJ
Drain-Source Voltage
V
Gate-Source Voltage
175
°C
°C
A
Maximum Junction Temperature
TSTG
Storage Temperature Range
-55 to 175
①
Diode Continuous Forward Current
TC=25°C
I
S
75
Mounted on Large Heat Sink
TC=25°C
TC=25°C
TC=100°C
300
IDP
ID
300ms Pulsed Drain Current Tested
①
75
A
Continue Drain Current
59
TC=25°C
200
100
0.75
PD
Maximum Power Dissipation
W
TC=100°C
RqJC
RqJA
Thermal Resistance -Junction to Case
Thermal Resistance-Junction to Ambient
°C/W
62.5
Drain-Source Avalanche Ratings
②
Avalanche Energy ,Single Pulsed
400
mJ
EAS
CopyrightÓ Ruichips Semiconductor Co., Ltd
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Rev.A –SEP., 2010
RU1H100
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
RU1H100
Symbol
Parameter
Test Condition
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
100
V
VGS=0V, IDS=250mA
VDS= 100V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
mA
TJ=85°C
30
Gate Threshold Voltage
Gate Leakage Current
2
3
4
V
VGS(th)
VDS=VGS, IDS=250mA
IGSS
VGS=±25V, VDS=0V
±100
14
nA
③
Drain-Source On-state Resistance VGS= 10V, IDS=40A
11
mW
RDS(ON)
Diode Characteristics
③
Diode Forward Voltage
ISD=40A, VGS=0V
1.2
V
VSD
trr
Reverse Recovery Time
36
46
ns
nC
ISD=40A, dlSD/dt=100A/ms
qrr
Reverse Recovery Charge
④
Dynamic Characteristics
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
1.5
3450
265
148
19
W
Input Capacitance
VGS=0V,
VDS= 50V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
86
VDD=50V,IDS= 40A, VGEN=
10V,RG=5.6W
ns
55
69
④
Gate Charge Characteristics
Qg
Qgs
Qgd
Total Gate Charge
85
20
35
135
VDS=80V, VGS= 10V,
IDS=40A
nC
Gate-Source Charge
Gate-Drain Charge
Notes: ①Current limited by package.
② Limited by TJmax, IAS =40A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C
③Pulse test ; Pulse width£400ms, duty cycle£2%.
④Guaranteed by design, not subject to production testing.
2
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
Typical Characteristics
Power Dissipation
Drain Current
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Square Wave Pulse Duration (sec)
3
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
ID - Drain Current (A)
Normalized Gate Threshold Voltage
VGS - Gate - Source Voltage (V)
Tj - Junction Temperature (°C)
4
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
QG - Gate Charge (nC)
5
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
6
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
Ordering and Marking Information
RU1H100
Package (Available)
R : TO-220;
S: TO-263 ; Q: TO-247
Operating Temperature Range
C : -55 to 175 ºC
Assembly Material
G : Green & Lead Free Device
Packaging
T : TUBE
TR : Tape & Reel
7
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
Package Information
TO-220FB-3L
MM
INCH
MM
INCH
SYMBOL
SYMBOL
MIN
4.40
1.27
2.35
0.77
1.23
0.48
NOM MAX
MIN NOM MAX
0.173 0.180 0.185
0.050 0.051 0.052
0.093 0.094 0.098
MIN
1.40
NOM MAX
MIN
NOM MAX
A
A1
A2
b
4.57
1.30
2.40
-
4.70
1.33
2.50
0.90
1.36
0.52
Øp1
e
1.50
2.54BSC
5.08BSC
6.50
1.60
0.055 0.059 0.063
0.1BSC
e1
H1
L
0.2BSC
0.030
0.048
-
-
0.035
0.054
6.40
12.75
-
6.60
0.252 0.256 0.260
b2
C
-
-
13.17 0.502
-
0.519
0.156
0.50
0.019 0.020 0.021
L1
L2
Øp
Q
-
3.95
-
-
D
15.40 15.60 15.80 0.606 0.614 0.622
2.50REF.
3.60
0.098REF.
D1
DEP
E
9.00
0.05
9.70
-
9.10
0.10
9.90
8.70
9.20
0.20
0.354 0.358 0.362
0.002 0.004 0.008
3.57
2.73
5°
1°
3.63
2.87
9°
5°
0.141 0.142 0.143
0.107 0.110 0.113
2.80
10.10 0.382 0.389 0.398
0.343
7°
5°
1°
7°
3°
9°
5°
θ1
θ2
E1
E2
-
-
-
3°
9.80
10.00 10.20 0.386 0.394 0.401
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
8
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
TO-263-2L
MM
INCH
MM
INCH
SYMBOL
SYMBOL
MIN
4.40
0
NOM MAX
MIN NOM MAX
0.173 0.180 0.185
MIN
2.00
1.17
-
NOM MAX
MIN
NOM MAX
A
A1
A2
b
4.57
4.70
0.25
2.79
0.90
1.36
0.47
1.32
8.80
L
L3
2.30
1.27
-
2.60
1.40
1.70
0.079 0.090 0.102
0.046 0.050 0.055
0.10
0
0.004 0.010
2.59
0.77
1.23
0.34
1.22
8.60
2.69
0.102 0.106 0.110
L1
-
-
0.01BSC
0.098REF.
-
0.067
-
0.030
0.048
0.013
0.048
-
-
-
-
0.035
0.052
0.019
0.052
L4
0.25BSC
2.50REF.
-
b1
c
-
L2
-
-
0°
5°
1°
0.05
1.40
8°
9°
5°
0.20
1.60
0°
5°
1°
8°
9°
5°
θ
C1
D
7°
7°
θ1
θ2
DEP
Øp1
8.70
0.338 0.343 0.346
3°
3°
E
10.00 10.16 10.26 0.394
2.54BSC
0.4
0.404
0.10
1.50
0.002 0.004 0.008
0.055 0.059 0.063
e
0.1BSC
H
14.70 15.10 15.50 0.579 0.594 0.610
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
9
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
TO-247
MM
INCH
MM
INCH
SYMBOL
SYMBOL
MIN
4.850
2.200
1.000
2.800
1.800
0.500
1.900
15.450
MAX
5.150
2.600
1.400
3.200
2.200
0.700
2.100
15.750
MIN
MAX
0.200
0.102
0.055
0.126
0.087
0.028
0.083
0.620
MIN
MAX
MIN
MAX
A
A1
B
0,191
0.087
0.039
0.110
0.071
0.020
0.075
0.608
E2
L
3.600 REF
0.142 REF
40.900
41.300
25.100
20.600
7.300
1.610
0.976
0.799
0.280
1.626
0.988
0.811
0.287
L1
L2
Φ
e
24.800
20.300
7.100
b1
b2
c
5.450 TYP
5.980 REF.
0.000 0.300
0.215 TYP
0.235 REF.
0.000 0.012
c1
D
H
h
E1
3.500 REF.
0.138 REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
10
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
RU1H100
Customer Service
Worldwide Sales and Service:
Sales@ruichips.com
Technical Support:
Technical@ruichips.com
Investor Relations Contacts:
Investor@ruichips.com
Marcom Contact:
Marcom@ruichips.com
Editorial Contact:
Editorial@ruichips.com
HR Contact:
HR@ruichips.com
Legal Contact:
Legal@ruichips.com
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: Sales-SZ@ruichips.com
11
CopyrightÓ Ruichips Semiconductor Co., Ltd
Rev. A –SEP., 2010
www.ruichips.com
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