RW1A025AP [ROHM]
1.5V Drive Pch MOSFET; 1.5V驱动P沟道MOSFET
| 型号： | RW1A025AP |
| 厂家： | 
ROHM |
| 描述： | 1.5V Drive Pch MOSFET |
| 文件： | 总7页 (文件大小：1128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
1.5V Drive Pch MOSFET
RW1A025AP
Structure
Dimensions (Unit : mm)
Silicon P-channel MOSFET
WEMT6
(6)
(1)
(5)
(2)
(4)
(3)
Features
1) Low On-resistance.
2) Small high power package.
3) Low voltage drive.(1.5V)
Abbreviated symbol : SD
Application
Switching
Packaging specifications
Inner circuit
(6)
(5)
(4)
Package
Taping
T2CR
8000
Type
Code
∗2
Basic ordering unit (pieces)
RW1A025AP
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
Absolute maximum ratings (Ta = 25C)
Parameter
(1)
(2)
(3)
Symbol
VDSS
VGSS
ID
Limits
12
Unit
V
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Drain-source voltage
Gate-source voltage
0 to 8
2.5
V
Continuous
A
Drain current
Pulsed
*1
IDP
7.5
A
Continuous
Pulsed
IS
0.5
7.5
A
Source current
(Body Diode)
*1
*2
ISP
A
Power dissipation
PD
0.7
W
C
C
Channel temperature
Tch
Tstg
150
Range of storage temperature
*1 Pw10s, Duty cycle1%
55 to 150
*2 Mounted on a ceramic board.
Thermal resistance
Parameter
Symbol
Rth (ch-a)*
Limits
179
Unit
Channel to Ambient
*Mounted on a ceramic board.
C / W
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.04 - Rev.A
1/6
Data Sheet
RW1A025AP
ꢀ
Electrical characteristics (Ta = 25C)
Parameter
Symbol
IGSS
Min.
Typ.
-
Max.
Unit
A VGS=8V, VDS=0V
ID=1mA, VGS=0V
A VDS=12V, VGS=0V
Conditions
Gate-source leakage
-
10
Drain-source breakdown voltage V(BR)DSS
12
-
-
V
Zero gate voltage drain current
Gate threshold voltage
IDSS
-
-
10
VGS (th)
0.3
-
1.0
V
VDS=6V, ID=1mA
ID=2.5A, VGS=4.5V
ID=1.2A, VGS=2.5V
ID=1.2A, VGS=1.8V
ID=0.5A, VGS=1.5V
ID=2.5A, VDS=6V
-
44
55
75
90
-
62
-
77
Static drain-source on-state
resistance
*
RDS (on)
m
S
-
110
-
180
*
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
l Yfs l
3.5
-
-
-
-
-
-
-
-
-
-
-
Ciss
Coss
Crss
-
-
-
-
-
-
-
-
-
-
2000
130
120
11
40
160
60
16
2.4
2.2
pF VDS=6V
pF VGS=0V
pF f=1MHz
td(on)
ns ID=1.2A, VDD 6V
ns VGS=4.5V
ns RL=5
*
*
tr
Turn-off delay time
Fall time
td(off)
*
*
tf
ns RG=10
Total gate charge
Gate-source charge
Gate-drain charge
Qg
nC ID=2.5A
nC VDD 6V
nC VGS=4.5V
*
*
*
Qgs
Qgd
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
Min.
-
Typ.
-
Max. Unit
1.2
Conditions
*
VSD
V
Is=2.5A, VGS=0V
*Pulsed
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2/6
2011.04 - Rev.A
Data Sheet
RW1A025AP
ꢀ
Electrical characteristic curves (Ta=25C)
Fig.1 Typical output characteristics(Ⅰ)
Fig.2 Typical output characteristics(Ⅱ)
2.5
2.5
2
Ta=25°C
pulsed
Ta=25°C
pulsed
VGS= -4.5V
VGS= -1.2V
2
1.5
1
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
1.5
1
VGS= -4.5V
VGS= -2.5V
VGS= -1.8V
VGS= -1.5V
VGS= -1.2V
0.5
0
0.5
0
VGS= -1.0V
VGS= -1.0V
0
0.2
0.4
0.6
0.8
1
0
2
4
6
8
10
10
10
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.4 Static Drain-Source On-State
Fig.3 Typical Transfer Characteristics
Resistance vs. Drain Current(Ⅰ)
10
1
1000
Ta=25°C
pulsed
VDS= -6V
Pulsed
VGS= -1.5V
VGS= -1.8V
VGS= -2.5V
VGS= -4.5V
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
100
0.01
0.001
10
0
0.5
1
1.5
0.1
1
DRAIN-CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.5 Static Drain-Source On-State
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Resistance vs. Drain Current(Ⅲ)
1000
100
10
1000
VGS= -2.5V
VGS= -4.5V
Pulsed
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
10
0.1
1
10
0.1
1
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
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3/6
2011.04 - Rev.A
Data Sheet
RW1A025AP
ꢀ
Fig.7 Static Drain-Source On-State
Fig.8 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
Resistance vs. Drain Current(Ⅴ)
1000
100
10
1000
100
10
VGS= -1.5V
Pulsed
VGS= -1.8V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
1
10
0.1
1
10
DRAIN-CURRENT : -ID[A]
DRAIN-CURRENT : -ID[A]
Fig.9 Forward Transfer Admittance
vs. Drain Current
Fig.10 Reverse Drain Current
vs. Sourse-Drain Voltage
100
10
1
10
1
VGS=0V
Pulsed
VDS= -6V
Pulsed
Ta=125°C
0.1
Ta=75°C
Ta=25°C
Ta=-25°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.001
0.1
0.1
1
10
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
DRAIN-CURRENT : -ID[A]
Fig.11 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
Fig.12 Switching Characteristics
1000
100
10
150
100
50
Ta=25°C
VDD= -6V
VGS=-4.5V
RG=10W
Pulsed
Ta=25°C
pulsed
td(off)
ID= -1.25A
ID= -2.5A
tf
td(on)
tr
1
0
0.01
0.1
1
10
100
0
2
4
6
8
DRAIN-CURRENT : -ID[A]
GATE-SOURCE VOLTAGE : -VGS[V]
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4/6
2011.04 - Rev.A
Data Sheet
RW1A025AP
ꢀ
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
Fig.12 Dynamic Input Characteristics
5
4
3
2
1
10000
1000
100
Ciss
Coss
Ta=25°C
Crss
VDD= -6V
ID= -2.5A
Pulsed
Ta=25°C
f=1MHz
VGS=0V
0
0
10
5
10
15
20
0.01
0.1
1
10
100
TOTAL GATE CHARGE : Qg [nC]
DRAIN-SOURCE VOLTAGE : -VDS[V]
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© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.04 - Rev.A
Data Sheet
RW1A025AP
ꢀ
Measurement circuits
Pulse Width
V
GS
ID
V
V
GS
10%
50%
V
DS
50%
90%
R
L
D.U.T.
10%
90%
10%
90%
RG
V
DD
DS td(on)
td(off)
t
r
tf
t
on
toff
Fig.1-2ꢀSwitching Waveforms
Fig.1-1 Switching Time Measurement Circuit
V
G
I
D
VDS
Q
g
V
GS
RL
V
GS
D.U.T.
I
G(Const.)
Q
gs
Qgd
VDD
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice
This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD
protection circuit.
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6/6
2011.04 - Rev.A
Notice
N o t e s
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More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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