RZR025P01_技术文档

RZR025P01

Transistors

1.5V Drive Pch MOSFET

RZR025P01

zDimensions (Unit : mm)

zFeatures

1) Low On-resistance.

TSMT3

1.0MAX

2) Built-in G-S Protection Diode.

3) Small and Surface Mount Package (TSMT3).

4) Low voltage drive (1.5V).

2.9

0.4

0.85

0.7

(

)

3

( )

2

1

0.95 0.95

1.9

zApplication

0.16

Switching

(1) Gate

Each lead has same dimensions

(2) Source

(3) Drain

Abbreviated symbol : YC

zStructure

Silicon P-channel MOSFET

zPackaging specifications

zEquivalent circuit

Package

Taping

TL

(3)

Type

Code

Basic ordering unit (pieces)

3000

RZR025P01

(1)

∗2

∗1

(1) Gate

(2)

(2) Source

(3) Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Limits

−12

10

Unit

V

V_DSS

V_GSS

I_D

V

Continuous

Pulsed

2.5

A

Drain current

∗1

I_DP

10

A

Source current

(Body diode)

Continuous

Pulsed

I_S

−0.8

−10

1.0

A

∗1

∗2

I_SP

A

Total power dissipation

Channel temperature

P_D

W

°C

Tch

Tstg

150

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Rth (ch-a) ^∗

Limits

125

Unit

Channel to ambient

∗ When mounted on a ceramic board.

°C / W

1/5

RZR025P01

Transistors

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

Unit

µA

V

Gate-source leakage

I_GSS

−

10

−

V

_GS= 10V, V_DS=0V

Drain-source breakdown voltage V_{(BR) DSS}−12

I_D= −1mA, V_GS=0V

Zero gate voltage drain current

I_DSS

−

−1

−1.0

61

84

121

220

−

µA

V

_DS= −12V, V_GS=0V

_DS= −6V, I_D= −1mA

Gate threshold voltage

V_{GS (th)}−0.3

V

−

3.5

44

60

81

110

−

1350

130

125

9

mΩ I_D= −2.5A, V_GS= −4.5V

mΩ I_D= −1.2A, V_GS= −2.5V

mΩ I_D= −1.2A, V_GS= −1.8V

mΩ

S

Static drain-source on-state

resistance

∗

R_{DS (on)}

I_D= −0.5A, V_GS= −1.5V

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Y_fs

C_iss

C_oss

V

_DS= −6V, I_D= −2.5A

_DS= −6V

_GS=0V

−

pF

C_rss

t_{d (on)}

pF f=1MHz

∗

ns

I

D

= −1.2A

V

R

DD −6V

GS= −4.5V

t

r

35

130

85

13

2.5

2.0

t_{d (off)}

t_f

Turn-off delay time

Fall time

L

=5Ω

G

=10Ω

Total gate charge

Gate-source charge

Q_g

Q_gs

Q_gd

nC V_DD−6V, I_D= −2.5A

nC

−

V

_GS= −4.5V

2.4Ω, R =10Ω

R

L

G

Gate-drain charge

nC

∗Pulsed

zBody diode characteristics(Source-drain) (Ta=25°C)

Parameter

Symbol Min. Typ. Max.

Conditions

I_S= −2.5A, V_GS=0V

Unit

V

∗

Forward voltage

V_SD

−

−1.2

∗ Pulsed

2/5

RZR025P01

Transistors

zElectrical characteristic curves

10

8

10

1

10

V_DS= -6V

Pulsed

Ta=25℃

Pulsed

℃

Ta=25

Pulsed

V_GS= -10V

V_GS= -4.5V

8

6

4

2

0

V

_GS= -4.0V

_GS= -2.5V

V

V_GS= -1.8V

V_GS= -10V

_GS= -4.5V

V_GS= -2.5V

°C

Ta= 125

Ta= 75

Ta= 25

Ta= - 25

V_GS= -2.0V

6

V

℃

V_GS= -1.6V

4

V_GS= -1.5V

0.1

2

V_GS= -1.2V

8 10

0.01

0

0.0

0.2

0.4

0.6

0.8

1.0

0

2

4

6

0.0

0.5

1.0

1.5

DRAIN-SOURCE VOLTAGE -V_DS[V]

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.3 Typical Transfer Characteristics

Fig.1 Typical Output Characteristics(

)

Ⅰ

Fig.2 Typical Output Characteristics(

)

Ⅱ

1000

100

10

1000

100

10

1000

℃

Ta=25

V_GS= -2.5V

Pulsed

V_GS= -4.5V

Pulsed

100

.

℃

Ta=125

V_GS= -1.5V

V_GS= -1.8V

V_GS= -2.5V

V_GS= -4.5V

℃

Ta=125

℃

Ta=75

℃

Ta=75

Ta=25

Ta= -25

℃

Ta=25

℃

Ta= -25

℃

10

0.1

1

10

0.1

1

10

)

0.1

1

10

DRAIN CURRENT : -I_D[A]

Fig.4 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.5 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.6 Static Drain-Source On-State

)

Ⅰ

)

Ⅱ

Resistance vs. Drain Current(

Ⅲ

10

1

1000

100

10

1000

V_GS= -1.8V

Pulsed

V_GS= -1.5V

Pulsed

V_GS=0V

Pulsed

℃

Ta=125

Ta=75

Ta=25

Ta=-25

℃

100

0.1

℃

Ta=125

℃

Ta=125

℃

Ta=75

Ta=25

Ta= -25

℃

Ta=75

Ta=25

Ta= -25

℃

0.01

10

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.1

1

10

0.1

1

10

SOURCE-DRAIN VOLTAGE : -V_SD[V]

DRAIN CURRENT : -I_D[A]

Fig.7 Static Drain-Source On-State

Resistance vs. Drain Current(

Fig.9 Reverse Drain Current

vs. Sourse-Drain Voltage

Fig.8 Static Drain-Source On-State

Resistance vs. Drain Current(

)

Ⅳ

)

Ⅳ

3/5

RZR025P01

Transistors

5

4

3

2

1

0

200

150

100

50

100

10

1

Ta=25℃

℃

Ta=25

V_DS= -6V

Pulsed

V_DD= -6V

I_D= -2.5A

R_G=10Ω

Pulsed

I_D= -2.5A

I_D= -1.2A

℃

Ta= -25

℃

Ta=25

Ta=75

Ta=125

℃

0

2

4

6

8

10

12

14

0.1

1.0

DRAIN CURRENT : -I_D[A]

10.0

5

10

TOTAL GATE CHARGE : Qg [nC]

GATE-SOURCE VOLTAGE : -V_GS[V]

Fig.12 Dynamic Input Characteristics

Fig.11 Forward Transfer Admittance

vs. Drain Current

Fig.10 Static Drain-Source On-State

Resistance vs. Gate Source Voltage

1000

10000

1000

100

td(off)

tf

100

10

1

Ciss

Crss

Coss

Ta=25℃

V_DD= -6V

V_GS=-4.5V

Ta=25℃

f=1MHz

V_GS=0V

td(on)

tr

R_G=10Ω

Pulsed

10

0.01

0.1

1

10

0.01

0.1

1

10

100

DRAIN CURRENT : -I_D[A]

DRAIN-SOURCE VOLTAGE : -V_DS[V]

Fig.13 Typical Capacitance

vs. Drain-Source Voltage

Fig.14 Switching Characteristics

ꢀ

4/5

RZR025P01

Transistors

zMeasurement circuits

Pulse width

I

D

V

GS

VGS

10%

50%

V

DS

50%

90%

RL

D.U.T.

10%

90%

10%

RG

V

DD

90%

V

^DStd(on)

td(off)

t

r

tf

t

on

toff

Fig.16 Switching Time Waveforms

Fig.15 Switching Time Test Circuit

V

G

V

GS

ID

V

DS

Q

g

RL

V

GS

I

G (Const.)

D.U.T.

Q

gs

Qgd

RG

V

DD

Charge

Fig.17 Gate Charge Test Circuit

Fig.18 Gate Charge Waveform

zNotice

This product might cause chip aging and breakdown under the large electrified environment.

Please consider to design ESD protection circuit.

5/5

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level

of reliability and the malfunction of which would directly endanger human life (such as medical

instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers

and other safety devices), please be sure to consult with our sales representative in advance.

It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance

of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow

for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in

order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM

cannot be held responsible for any damages arising from the use of the products under conditions out of the

range of the specifications or due to non-compliance with the NOTES specified in this catalog.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact your nearest sales office.

THE AMERICAS / EUROPE / ASIA / JAPAN

ROHM Customer Support System

Contact us : webmaster@ rohm.co.jp

www.rohm.com

TEL : +81-75-311-2121

FAX : +81-75-315-0172

21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan

Appendix1-Rev2.0


型号：	RZR025P01
厂家：	ROHM
描述：	1.5V Drive Pch MOSFET 1.5V驱动P沟道MOSFET 驱动
文件：	总6页 (文件大小：193K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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