S4007 [ROHM]
S4007是SiC（碳化硅）功率MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC？电子基础;
| 型号： | S4007 |
| 厂家： | 
ROHM |
| 描述： | S4007是SiC（碳化硅）功率MOSFET。其特征是高耐压、低导通电阻、高速开关。关于Bare Die的销售请向本公司销售部门咨询规格。现在尚未进行网络销售及经由网络公司进行销售。 SiC支持页面评估板 应用实例罗姆SiC器件 什么是SiC？电子基础 电子 开关 |
| 文件： | 总12页 (文件大小：729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S4007
Datasheet
N-channel SiC power MOSFET bare die
VDSS
RDS(on) (Typ.)
ID
650V
80mW
30A*1
lFeatures
lInner circuit
1) Low on-resistance
2) Fast switching speed
3) Fast reverse recovery
4) Easy to parallel
(1) Gate
(2) Drain
(3) Source
*1 Body Diode
5) Simple to drive
lApplication
・Solar inverters
・DC/DC converters
・Switch mode power supplies
・Induction heating
・Motor drives
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VDSS
Value
650
Unit
Drain - Source voltage
V
A
*1
Tc = 25°C
Continuous drain current
30
ID
*2
Pulsed drain current
75
A
ID,pulse
VGSS
Gate - Source voltage (DC)
Gate-Source Surge Voltage (tsurge < 300nsec)
Recommended Drive Voltage
Junction temperature
V
-4 to +22
-4 to +26
0 / +18
175
*3
V
VGSS_surge
*4
V
VGS_op
Tj
°C
°C
Tstg
Range of storage temperature
-55 to +175
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
TSQ50151-S4007
14.Jun.2018 - Rev.001
1/11
Datasheet
S4007
lElectrical characteristics (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
650
Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
VDS = 650V, VGS = 0V
-
-
V
Zero gate voltage
drain current
IDSS
Tj = 25°C
-
1
2
-
10
-
mA
Tj = 150°C
-
-
IGSS+
IGSS-
VGS = +22V, VDS = 0V
VGS = -4V, VDS = 0V
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
100
-100
5.6
nA
nA
V
-
-
VGS (th) VDS = 10V, ID = 5mA
2.7
-
VGS = 18V, ID = 10A
Static drain - source
on - state resistance
*5
Tj = 25°C
RDS(on)
-
-
-
80
105.6
13
100
mW
Tj = 125°C
-
-
RG
Gate input resistance
f = 1MHz, open drain
W
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50151-S4007
14.Jun.2018 - Rev.001
2/11
Datasheet
S4007
lElectrical characteristics (Ta = 25°C)
Values
Typ.
3.8
Parameter
Symbol
Conditions
Unit
Min.
Max.
*5
VDS = 10V, ID = 10A
VGS = 0V
Transconductance
-
-
-
-
-
-
-
-
S
gfs
Ciss
Coss
Crss
Input capacitance
571
39
VDS = 500V
f = 1MHz
Output capacitance
pF
Reverse transfer capacitance
19
VGS = 0V
VDS = 0V to 300V
Effective output capacitance,
energy related
Co(er)
-
99
-
pF
ns
*5
VDD = 300V, ID = 10A
VGS = 18V/0V
RL = 30W
Turn - on delay time
Rise time
-
-
-
-
16
26
27
16
-
-
-
-
td(on)
*5
tr
*5
Turn - off delay time
Fall time
td(off)
*5
RG = 0W
tf
VDD = 300V, ID=10A
VGS = 18V/0V
*5
Turn - on switching loss
Turn - off switching loss
-
-
41
15
-
-
Eon
RG = 0W L=500mH
*Eon includes diode
reverse recovery
mJ
*5
Eoff
lGate Charge characteristics (Ta = 25°C)
Values
Typ.
48
Parameter
Symbol
Conditions
Unit
Min.
Max.
*5
VDD = 300V
ID = 10A
Total gate charge
-
-
-
-
-
-
-
-
Qg
*5
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
14
nC
V
Qgs
*5
VGS = 18V
17
Qgd
V(plateau) VDD = 300V, ID = 10A
9.6
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50151-S4007
14.Jun.2018 - Rev.001
3/11
Datasheet
S4007
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
-
Max.
Inverse diode continuous,
forward current
*1
-
-
30
75
A
A
IS
Tc = 25°C
Inverse diode direct current,
pulsed
*2
-
ISM
*5
VGS = 0V, IS = 10A
Forward voltage
-
-
-
-
3.2
15
53
7
-
-
-
-
V
ns
nC
A
VSD
*5
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
trr
IF = 10A, VR = 300V
*5
Qrr
di/dt = 1100A/ms
*5
Irrm
*1 For Tj=175°C and thermal dissiparion to ambience of 134W or more.
Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 Example of acceptable Vgs waveform
*4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause
thermal runaway.
*5 Pulsed
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© 2018 ROHM Co., Ltd. All rights reserved.
TSQ50151-S4007
4/11
14.Jun.2018 - Rev.001
TSZ22111・15・001
Datasheet
S4007
lElectrical characteristic curves
Fig.1 Typical Output Characteristics(I)
Fig.2 Typical Output Characteristics(II)
30
15
12
9
20V
18V
20V
Ta = 25ºC
Pulsed
25
20
15
10
5
18V
16V
14V
16V
Ta = 25ºC
Pulsed
14V
12V
12V
10V
6
10V
VGS= 8V
8
3
VGS= 8V
0
0
0
2
4
6
10
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.3 Tj = 150ºC Typical Output
Fig.4 Tj = 150ºC Typical Output
Characteristics(I)
Characteristics(II)
15
30
20V
20V
Ta = 150ºC
14V
Pulsed
18V
16V
25
20
15
10
5
18V
12
10V
12V
14V
16V
10V
12V
9
6
3
0
VGS= 8V
VGS= 8V
Ta = 150ºC
Pulsed
0
0
1
2
3
4
5
0
2
4
6
8
10
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSQ50151-S4007
5/11
14.Jun.2018 - Rev.001
TSZ22111・15・001
Datasheet
S4007
lElectrical characteristic curves
Fig.5 Typical Transfer Characteristics (I)
100
Fig.6 Typical Transfer Characteristics (II)
30
25
20
15
10
5
VDS = 10V
Pulsed
VDS = 10V
Pulsed
10
1
Ta= 150ºC
Ta= 150ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
0.01
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
Gate - Source Voltage : VGS [V]
Fig.7 Gate Threshold Voltage
Fig.8 Transconductance vs. Drain Current
vs. Junction Temperature
6
10
VDS = 10V
ID = 5mA
VDS = 10V
Pulsed
5
4
3
2
1
0
1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
-50
0
50
100
150
200
0.1
1
10
Junction Temperature : Tj [ºC]
Drain Current : ID [A]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSQ50151-S4007
6/11
14.Jun.2018 - Rev.001
TSZ22111・15・001
Datasheet
S4007
lElectrical characteristic curves
Fig.9 Static Drain - Source On - State
Fig.10 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
Resistance vs. Junction Temperature
0.32
0.32
0.28
0.24
0.2
VGS = 18V
Pulsed
Ta = 25ºC
Pulsed
0.28
0.24
0.2
0.16
0.12
0.08
0.04
0
0.16
0.12
0.08
0.04
0
ID = 20A
ID = 20A
ID = 10A
ID = 10A
8
10
12
14
16
18
20
22
-50
0
50
100
150
200
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.11 Static Drain - Source On - State
Resistance vs. Drain Current
1
0.1
Ta = 150ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
VGS = 18V
Pulsed
0.01
1
10
Drain Current : ID [A]
100
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© 2018 ROHM Co., Ltd. All rights reserved.
TSQ50151-S4007
7/11
14.Jun.2018 - Rev.001
TSZ22111・15・001
Datasheet
S4007
lElectrical characteristic curves
Fig.12 Typical Capacitance
vs. Drain - Source Voltage
10000
Fig.13 Coss Stored Energy
8
Ta = 25ºC
7
Ciss
1000
100
6
5
4
3
2
1
0
Coss
Crss
10
Ta = 25ºC
f = 1MHz
VGS = 0V
1
0.1
1
10
100
1000
0
100
200
300
400
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.14 Switching Characteristics
Fig.15 Dynamic Input Characteristics
10000
1000
100
10
20
Ta = 25ºC
Ta = 25ºC
VDD = 300V
ID = 10A
VDD = 300V
VGS = 18V
RG = 0W
tf
15
Pulsed
Pulsed
10
5
td(off)
tr
td(on)
1
0
0.1
1
10
100
0
10
20
30
40
50
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSQ50151-S4007
8/11
14.Jun.2018 - Rev.001
TSZ22111・15・001
Datasheet
S4007
lElectrical characteristic curves
Fig.16 Typical Switching Loss
vs. Drain - Source Voltage
100
Fig.17 Typical Switching Loss
vs. Drain Current
400
Ta = 25ºC
VDD=300V
VGS = 18V/0V
RG=0W
Ta = 25ºC
ID=10A
VGS = 18V/0V
RG=0W
L=500mH
90
80
70
60
50
40
30
20
10
0
350
300
L=500mH
250
200
Eon
150
100
50
Eon
Eoff
Eoff
25
Drain Current : ID [A]
0
0
5
10
15
20
30
100
200
300
400
500
Drain - Source Voltage : VDS [V]
Fig.18 Typical Switching Loss
vs. External Gate Resistance
400
Ta = 25ºC
350
VDD=300V
ID=10A
VGS = 18V/0V
300
L=500mH
250
200
150
Eon
100
Eoff
50
0
0
5
10
15
20
25
30
External Gate Resistance : RG [W]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSQ50151-S4007
9/11
14.Jun.2018 - Rev.001
TSZ22111・15・001
Datasheet
S4007
lElectrical characteristic curves
Fig.19 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
Fig.20 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
100
10
VGS = 0V
Pulsed
Ta = 25ºC
di / dt = 1100A / us
VR = 300V
VGS = 0V
10
1
Pulsed
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.1
0.01
0
1
2
3
4
5
6
7
8
1
10
100
Source - Drain Voltage : VSD [V]
Inverse Diode Forward Current : IS [A]
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50151-S4007
14.Jun.2018 - Rev.001
10/11
Datasheet
S4007
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2ꢀSwitching Waveforms
Fig.2-2 Gate Charge Waveform
Fig.3-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.3-1 Switching Energy Measurement Circuit
Eon = ID×VDS
Eoff = ID×VDS
Vsurge
Same type
device as
D.U.T.
Irr
VDS
D.U.T.
ID
ID
Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform
D.U.T.
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TSQ50151-S4007
14.Jun.2018 - Rev.001
11/11
Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2015 ROHM Co., Ltd. All rights reserved.
R1102
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