SCS106AG [ROHM]

SiC Schottky Barrier Diode; SiC肖特基势垒二极管
SCS106AG
型号: SCS106AG
厂家: ROHM    ROHM
描述:

SiC Schottky Barrier Diode
SiC肖特基势垒二极管

二极管
文件: 总4页 (文件大小:1074K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Data Sheet  
SiC Schottky Barrier Diode  
SCS106AG  
Applications  
Dimensions (Unit : mm)  
Structure  
Switching power supply  
Features  
1)Shorter recovery time  
2)Reduced temperature dependence  
3)High-speed switching possible  
Construction  
Silicon carbide epitaxial planer type  
ROHM : O-220AC 2L  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
Symbol  
VRM  
VR  
Unit  
V
Reverse voltage (repetitive)  
Reverse voltage (DC)  
600  
600  
V
Continuous forward current(*1)  
Forward current surge peak (60Hz1cyc) (*2)  
Junction temperature  
IF  
6
21  
A
IFSM  
Tj  
A
150  
°C  
°C  
Storage temperature  
55 to 150  
Tstg  
(*1)Tc=124°C max  
(*2)PW=8.3ms sinusoidal  
Electrical characteristics (Ta=25°C)  
Parameter  
Symbol  
VDC  
VF  
Min.  
Typ.  
-
Max.  
Unit  
V
Conditions  
DC blocking voltage  
Forward voltage  
600  
-
1.7  
120  
-
IR=0.12mA  
IF=6A  
-
-
-
-
-
-
-
1.5  
1.2  
260  
28  
12  
18  
-
V
IR  
Reverse current  
μA  
pF  
VR=600V  
VR=1V,f=1MHz  
Total capacitance  
C
-
pF  
VR=600V,f=1MHz  
VR=400V,di/dt=230A/μs  
VR=400V,di/dt=230A/μs  
junction to case  
Total capacitive charge  
Switching time  
Qc  
tc  
-
nC  
ns  
-
Thermal resistance  
Rth(j-c)  
2.3  
°C/W  
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© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  
2011.04 - Rev.A  
Data Sheet  
SCS106AG  
Fig.2 VF-IF Characteristics  
Fig.1 VF-IF Characteristics  
10  
8
100  
pulsed  
pulsed  
10  
Ta= 125°C  
Ta= 75°C  
6
1
0.1  
Ta= 25°C  
Ta=-25°C  
4
Ta= 125°C  
Ta= 75°C  
2
0.01  
0.001  
Ta= 25°C  
Ta=-25°C  
0
0
0.5  
1
1.5  
2
2.5  
1000  
150  
0
0.5  
1
1.5  
2
2.5  
600  
1000  
FORWARD VOLTAGE : VF (V)  
FORWARD VOLTAGE : VF (V)  
Fig.3 VR-IR Characteristics  
Fig.4 VR-Ct Characteristics  
1000  
100000  
10000  
1000  
100  
100  
10  
1
Ta= 125°C  
Ta= 75°C  
Ta= 25°C  
10  
Ta=25°C  
f=1MHz  
Ta=-25°C  
1
0
200  
400  
0.01  
0.1  
1
10  
100  
REVERSE VOLTAGE : VR [V]  
REVERSE VOLTAGE: VR (V)  
Fig.5 Thermal Resistance vs Pulse Width  
Fig.6 Power Dissipation  
10  
60  
Ta=25°C  
Single Pulse  
50  
40  
30  
20  
10  
0
1
0.1  
0.01  
0.00001 0.0001 0.001 0.01  
0.1  
1
10  
100  
0
30  
60  
90  
120  
CASE TEMPERATURE Tc ()  
PULSE WIDTH : Pw (s)  
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© 2011 ROHM Co., Ltd. All rights reserved.  
2/3  
2011.04 - Rev.A  
Data Sheet  
SCS106AG  
Fig.7 Derating Curve Ip-Tc  
Fig.8 Io-Pf Characteristics  
35  
25  
20  
15  
10  
5
Duty=0.1  
D.C.  
Duty=0.8  
30  
25  
20  
15  
10  
5
Duty=0.5  
Duty=0.2  
Duty=0.1  
Duty=0.2  
Duty=0.5  
Duty=0.8  
D.C.  
0
0
0
30  
60  
90  
120  
150  
0
5
10  
CASE TEMPARATURE : Tc ()  
AVERAGE RECTIFIED FORWARD CURRENT : Io (A)  
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© 2011 ROHM Co., Ltd. All rights reserved.  
3/3  
2011.04 - Rev.A  
Notice  
N o t e s  
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More detail product informations and catalogs are available, please contact us.  
ROHM Customer Support System  
http://www.rohm.com/contact/  
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© 2011 ROHM Co., Ltd. All rights reserved.  
R1120A  

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